14 MARK CODE TRANSISTOR SMD Search Results

Contextual Info: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

Contextual Info: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

PC929

Abstract: PC929PJ0000F PC929J00000F pc929 using igbt pc929 using igbt number E64380 PC929PYJ000 PHOTOCOUPLER SERIES with gnd EN60747-5-2 VDE0884
Contextual Info: PC929J00000F Series PC929J00000F Series High Speed, Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoulper • Description ■ Agency approvals/Compliance PC929J00000F Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .

Contextual Info: PC929J00000F Series PC929J00000F Series High Speed, Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoulper • Description ■ Agency approvals/Compliance PC929J00000F Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .

Contextual Info: PC928J00000F Series PC928J00000F Series Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoupler • Description ■ Agency approvals/Compliance PC928J00000F Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .

PC929

Abstract: pc929 equivalent PC929PY PC929P E64380 pc929 using igbt rc1k RC 1K pc929 using igbt number V02H
Contextual Info: PC929 Series PC929 Series High Speed, Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoulper • Description ■ Agency approvals/Compliance PC929 Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .

Contextual Info: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

PC928

Abstract: pc928 application E64380 V02H VDE0884 SMD-14 transistor RC1K
Contextual Info: PC928 Series PC928 Series Built-in Short Protection Circuit, Gate Drive SMD 14 pin ∗OPIC Photocoupler • Description ■ Agency approvals/Compliance PC928 Series contains an IRED optically coupled to an OPIC chip. It is packaged in a Mini-flat, Half pitch type 14 pin .

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

6n137

Contextual Info: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of Lite-on Only 6N137 High CMR, High Speed TTL Compatible Optocouplers Description The 6N137 consists of a high efficient AlGaAs Light Emitting Diode and a high speed optical detector. This design provides

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

transistor dtx 360 mosfet

Abstract: transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild
Contextual Info: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

sot-23 marking code 2fn

Abstract: transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER
Contextual Info: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering