13SEP2011 Search Results

Contextual Info: SJV01N60 1A , 600V , RDS ON 10 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking

Contextual Info: BTA10-600GP 10 A Triac Features • Low IH: – 13 mA max ■ High surge current: – ITSM = 120 A A2 G A1 ■ IGT specified in four quadrants ■ Insulating voltage: – 2500 V RMS (UL Recognized: E81734) Description A1 A2 The BTA10-600GP uses high performance, glass

TN2540-800G

Abstract: 7478 j k
Contextual Info: TN2540, TXN625 TYN625, TYN825 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

ST T8 1060

Abstract: ST T4 1060 l0741 L0148 1090mhz ATC100A300JP
Contextual Info: STAC1011-350 LDMOS avionics radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■ ST Air Cavity / STAC package Description

Antenna Diversity Radio Extender

Abstract: CC1101 RSSI read
Contextual Info: CC1120 High Performance RF Transceiver for Narrowband Systems Applications • • • • • • • • • • Narrowband ultra low power wireless systems with channel spacing down to 12.5 kHz 170 / 433 / 868 / 915 / 950 MHz ISM/SRD band Wireless Metering and Wireless Smart Grid AMR and

AV80577

Abstract: 82801IBM PGA478 socket pga478 av8057 T9900 BGA479 Transistor BFr 99 "Analysis on Intel Pentium Processor L1 Cache SRAM" January 2011 AW80577
Contextual Info: Intel Core 2 Duo Mobile Processor, Intel® Core™2 Solo Mobile Processor and Intel® Core™2 Extreme Mobile Processor on 45-nm Process Datasheet For platforms based on Mobile Intel® 4 Series Express Chipset Family March 2009 Document Number: 320120-004

Contextual Info: STAC0912-250 LDMOS avionics radar transistor Datasheet - production data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 16 dB gain over 960 1215 MHz • ST Air Cavity / STAC package Description STAC265B

MSI G41 MOTHERBOARD CIRCUIT diagram

Abstract: intel 845 MOTHERBOARD PGA478 g41 msi motherboard circuit diagram spi lpc 82801gb socket pga478 Socket AM2 motherboard msi g41 PGA-478
Contextual Info: Intel 3000 and 3010 Chipset Memory Controller Hub MCH Datasheet November 2008 Reference Number: 313953 Revision: 002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

LE3100

Abstract: kbc 1098 pmb 7850 Intel core i7 0300LS Socket AM2 delta wireless doorbell IC 501 south bridge SIS 968 MOTHERBOARD pcb CIRCUIT diagram intel core 2 duo e7500
Contextual Info: Intel 3100 Chipset Datasheet June 2007 Order Number: 313458-004US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS

14443-3 type A command read write

Contextual Info: SRIX4K 13.56 MHz short-range contactless memory chip with 4096-bit EEPROM, anticollision and anti-clone functions Features • ISO 14443-2 Type B air interface compliant ■ ISO 14443-3 Type B frame format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency

date code, Renesas

Abstract: RD18P-T1-AZ diode sc-62
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TYN825

Abstract: TYN825RG TO-220AB footprint TYN1225 TXN625 TN2540-800G tyn1225rg TYN625RG TYN625 scr tyn825
Contextual Info: TN2540, TXN625 TYN625, TYN825, TYN1225 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

SLUP100

Contextual Info: CSD87352Q5D SLPS286A – JUNE 2011 – REVISED SEPTEMBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • The CSD87352Q5D NexFET™ power block is an optimized design for synchronous buck applications

Contextual Info: STAC1011-350 LDMOS avionics radar transistor Datasheet - production data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 350 W with 15 dB gain over 1030 1090 MHz • ST Air Cavity / STAC package Description STAC265B

TYN1225

Abstract: scr tyn825 txn625 tyn825 Tyn625
Contextual Info: TN2540, TXN625 TYN625, TYN825, TYN1225 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

Contextual Info: SMM4F12AVCL 400 W low clamping voltage Transil Features • Typical peak pulse power: – 400 W 10/1000 µs – 2.4 kW (8/20 µs) ■ Stand off voltage: 12 V ■ Unidirectional type ■ Low clamping factor ■ Low leakage current: – 0.2 µA at 25 °C

7816-6 AM1

Contextual Info: SRI512 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions Features • ISO 14443-2 Type B air interface compliant ■ ISO 14443-3 Type B frame format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency

UL94-V2

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 y 1 20 LOC REVISIONS DIST IR ALL RIGHTS RESERVED. - P LTR AV AV1 3.25 D q AV2 OF TAB AV3 DESCRIPTION DATE DWN APVD ECR-10-002350 01/02/10 MJG JA ECR-10-022530 06JUN2011 KK HMR TABLE UPDATED ECR-11-018833

electrolytic capacitor 100uF 50v

Abstract: L0325 8W361J l0225 0912-250 capacitor 220uF W0418
Contextual Info: STAC0912-250 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 16 dB gain over 960 - 1215 MHz ■

TPS82674

Abstract: TPS82677 TPS82672
Contextual Info: TPS82671, TPS82675 TPS82676, TPS82677 SLVSAI0B – OCTOBER 2010 – REVISED AUGUST 2011 www.ti.com 600-mA, HIGH-EFFICIENCY MicroSiP STEP-DOWN CONVERTER PROFILE <1.0mm Check for Samples: TPS82671, TPS82675, TPS82676, TPS82677 FEATURES 1 • • • 90% Efficiency at 5.5MHz Operation

Contextual Info: SRIX4K 13.56 MHz short-range contactless memory chip with 4096-bit EEPROM, anticollision and anti-clone functions Features • ISO 14443-2 Type B air interface compliant ■ ISO 14443-3 Type B frame format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency

Contextual Info: SRI512 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions Features • ISO 14443-2 Type B air interface compliant ■ ISO 14443-3 Type B frame format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency

TPS82678

Abstract: TPS82675 TPS82671 TPS82671SIPR TPS82674 TPS82677 TPS82672
Contextual Info: TPS82671, TPS82675 TPS82676, TPS82677 SLVSAI0B – OCTOBER 2010 – REVISED AUGUST 2011 www.ti.com 600-mA, HIGH-EFFICIENCY MicroSiP STEP-DOWN CONVERTER PROFILE <1.0mm Check for Samples: TPS82671, TPS82675, TPS82676, TPS82677 FEATURES 1 • • • 90% Efficiency at 5.5MHz Operation

BTA10-600GP

Abstract: bta10600gp Triac BTA10 dimmer -triac -led AC bta10
Contextual Info: BTA10-600GP 10 A Triac Features • Low IH: – 13 mA max ■ High surge current: – ITSM = 120 A A2 G A1 ■ IGT specified in four quadrants ■ Insulating voltage: – 2500 V RMS (UL Recognized: E81734) Description A1 A2 The BTA10-600GP uses high performance, glass