13MJ Search Results

13MJ Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LT1013MJGB		Texas Instruments	Dual Precision Operational Amplifier 8-CDIP -55 to 125
LT1013MJG		Texas Instruments	Dual Precision Operational Amplifier 8-CDIP -55 to 125

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Eaton Cutler-Hammer 10250T15113MJ3 Sel Sw 2P Key Ma; \|Eaton Cutler Hammer 10250T15113MJ3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	10250T15113MJ3	Bulk			1	1 $255.91 10 $237.63 100 $210.92 1000 $210.92 10000 $210.92	Buy Now
RS	10250T15113MJ3	Bulk		5 Weeks	1	1 $306.49 10 $281.97 100 $281.97 1000 $281.97 10000 $281.97	Get Quote
Eaton Cutler-Hammer 10250T15113MJ16 Sel Sw 2P Key Ma; \|Eaton Cutler Hammer 10250T15113MJ16
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	10250T15113MJ16	Bulk			1	1 $255.91 10 $237.63 100 $210.92 1000 $210.92 10000 $210.92	Buy Now
RS	10250T15113MJ16	Bulk		5 Weeks	1	1 $306.49 10 $281.97 100 $281.97 1000 $281.97 10000 $281.97	Get Quote
Analog Devices Inc MAX313MJE 10Ohm, Quad, SPST, CMOS Analog
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Analog Devices Inc	MAX313MJE					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	MAX313MJE		140		1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	MAX313MJE		5,430			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SMC Corporation of America VX213MJB VALVE, 2 PORT, VX2 SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	VX213MJB	Bulk		5 Weeks	1	1 $58.30 10 $58.30 100 $58.30 1000 $58.30 10000 $58.30	Get Quote
Siemens 6AV21813MJ200AX0 PROTECT. FILM 12" WIDESCREEN, TYPE 2 ; 6AV21813MJ200AX0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	6AV21813MJ200AX0	Package		2 Weeks	1	1 $411.47 10 $378.55 100 $378.55 1000 $378.55 10000 $378.55	Get Quote

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13MJ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE2374 Contextual Info: NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A	Original	nte2374	PDF
NTE2385 Contextual Info: NTE2385 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A	Original	nte2385	PDF
NTE2379 Contextual Info: NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V	Original	nte2379	PDF
TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	od-80 od-323 ot-23 ot-89 +13ot-143 ot-223 ot-323 triac 97a6 s0805bh 13003 transistor to220 equivalent triacs bt 804 600v triac bt 808 600c diode sot-23 marking 15d zener diode 1n ph 48 6bs smd transistor z0409mf equivalent bt 808 600c	PDF
NTE2904 Abstract: C62C Contextual Info: NTE2904 MOSFET N-Ch, Enhancement Mode High Speed Switch Features: D Advanced Process Technology D Ultra Low On-Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID	Original	nte2904 dissipation32a 00a/s c62c	PDF
triac gate drive circuit Abstract: IGBT light DIMMER igbt dimmer IGBT/MOSFET Gate Drive driving mosfet/igbt with pulse transformer driver "reverse phase control" igbt dimmer TRIAC dimmer control an5183 reverse phase control igbt dimmer ZENER DIODE t2 Contextual Info: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles	Original	triac gate drive circuit igbt light dimmer igbt dimmer igbt/mosfet gate drive +6driving mosfet/igbt with pulse transformer driver reverse phase control" igbt dimmer triac dimmer control an5183 reverse phase control igbt dimmer zener diode t2	PDF
2601 Contextual Info: PART NAME PART No. NEMA 4X ENCLOSURE NOTE: INDUSTRY STANDARDS! POLYCARBONATE LIGHT GRAY AND CLEAR U L94V -2 FLAMMABILITY RATING (UL FILE UV STABILIZED SERVICE TEMPERATURE RANGE: -40C TD ABS (DARK GRAY) UL94-HB FLAMMABILITY RATING (UL FILE SERVICE TEMPERATURE RANGE: -40C TD	OCR Scan	ie41613 e56070 pnr-2600 pnr-2601 +6pnr-2600-c pnr-2601-c pnr-2600-dg pnr-2601-dg ul94-hb 2601	PDF
N-Channel Enhancemen-Mode MOSFET Abstract: NTE2386 Contextual Info: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power	Original	nte2386 n-channel enhancemen-mode mosfet	PDF
NTE2397 Abstract: Transistor Mosfet N-CH 200V 40A Contextual Info: NTE2397 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A	Original	nte2397 transistor mosfet n-ch 200v 40a	PDF
NTE2399 Contextual Info: NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A	Original	nte2399	PDF
NTE2900 Abstract: NTE290 Contextual Info: NTE2900 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A	Original	nte2900 nte290	PDF
igbt dimmer Abstract: IGBT light DIMMER "reverse phase control" igbt dimmer reverse phase control igbt dimmer DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs light dimmer igbt STGP10N50 AN486 topologies pulse transformer driver IGBT APPLICATION LC filter dimmer Triac Contextual Info: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles	Original	igbt dimmer igbt light dimmer reverse phase control" igbt dimmer reverse phase control igbt dimmer +6drive circuits for power mosfets and igbts light dimmer igbt stgp10n50 an486 topologies pulse transformer driver igbt application lc filter dimmer triac	PDF
Contextual Info: 7 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 6 5 3 4 2 ,19 LOC DIST DF ALL INTERNATIONAL RIGHTS RESERVED. 1 DO REVISIONS ZONE LTR DESCRIPTION L REV PER 0600-6687-97 JY	OCR Scan	13-mj6-98 anpt3037 e/aiipt3037/ediimod	PDF
Contextual Info: NTE2373 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A	Original	nte2373	PDF