13MAY2010 Search Results

MIL-STD-750E

Abstract: STRH100N10 STRH100N10FSY1
Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened

ELECTRONIC BALLAST 150 W HID DIAGRAM

Abstract: CBB21 schematic diagram Electronic Ballast HID cbb21 capacitor schematic diagram of energy saving lamps 25 watts 70W hid ballast CL21 capacitor 400v ne555 SMD TDK CT101 L6385E
Contextual Info: AN2835 Application note 70 W HID lamp ballast based on the L6569, L6385E and L6562A Introduction This application note describes the electronic lamp ballast for 70 W high intensity discharge HID metal halide lamps (MHL) used for general indoor applications. The ballast is

NAND512R3A2D

Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Contextual Info: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened

STM4639

Contextual Info: SSG4639STM P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS ON 8.5 m Elektronische Bauelemente FEATURES     Super high dense cell design for low RDS(on). Rugged and reliable. Surface Mount Package. ESD Protected. SOP-8 B PRODUCT SUMMARY

video decoder webcam circuit diagram

Abstract: RAW10 decoder webcam circuit diagram smia 65 camera module CAMERA SMIA STSMIA832 STSMIA832TBR CAMERA SMIA 85 SCHEMATIC webcam plane 1-21-74
Contextual Info: STSMIA832 1.8 V / 2.8 V high speed dual differential line receivers, standard mobile imaging architecture SMIA decoder deserializer Features • Sub-low voltage differential signaling inputs: VID = 100 mV min. with RT = 100 Ω, CL = 10 pF ■ High signaling rate:

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC AD ALL RIGHTS RESERVED. BY - NOTCH DESIGNATES ROW A 27.0 D REVISIONS DIST 00 P LTR DESCRIPTION APVD 22MAR2014 AP DD B REVISED PER ECO-14-004985 12MAY2014 LAW DD 2 FINISH:

NAND512W3A2D

Abstract: NAND512R3A2D
Contextual Info: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features „ „ High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

Doc ID 17486 Rev 7

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

STRH100N10

Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01
Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened

a04l

Abstract: 45-21UMC B54L
Contextual Info: Technical Data Sheet Top View White LEDs 45-21UMC/XXXXXXX/TR8 Features ․Top View White LEDs ․Lead frame package with individual 2 pins ․Wide viewing angle ․Soldering methods: IR reflow soldering ․Pb-free ․The product itself will remain within RoHS compliant

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

Contextual Info: R DiePlus Advantage SiliconBlue January 25, 2011 2.0.6 Data Sheet DiePlus Advantage is SiliconBlue’s focused program to provide designers with an optimal device mounting solution for mobile handheld applications. This data sheet provides detailed information regarding DiePlus

74CB218ARTR

Abstract: 7150MLF 1892YLF MK1726-01SLFTR 1893bflf 5V551DCGI MK9170 1522MLF PDN MK9170-01CS08LF 343MPLFT
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: U-09-01 Last Buy Deadline for Submission of Order: 13-May-2009

Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened

STRH100N10H

Abstract: vd 5205
Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite