ZD602
Abstract: B628 ALC258 TP2121 BA41-00509A bd631 TP2274 zd601 S2R51 ati M22P
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C B CPU :Dothan533
|
Original
|
tp1765tp1714tp1715tp1716+16tp1717tp1718tp1719tp1720tp1721tp1722zd602b628alc258tp2121ba41-00509abd631tp2274zd601s2r51ati m22p
|
PDF
|
ALC122
Abstract: ZD602 ALC258 TP2121 B628 ZD601 TP728 smd code w14 tp2307 Socket AM2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C CPU :Dothan533 Chip Set :ALVISO & ICH6-M
|
Original
|
controller62tp1763tp1764tp1765+16tp1714tp1715tp1716tp1717tp1718tp1719alc122zd602alc258tp2121b628zd601tp728smd code w14tp2307socket am2
|
PDF
|
|
Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ
|
Original
|
pi3lvd101210-differential24bit-55db+380-pinmo-154c/bc150-mil
|
PDF
|
ZP80
Abstract: 11B2 Diode motorola diode ZP PI3LVD812 diode 6b1 10B1 10B2 11B1 11B2 12B1
Contextual Info: PI3LVD812 3.3V, 8-differential Channel Dual-LVDS Switch Targeted for 18-bit Displays Features Description • Designed specifically to switch Dual-LVDS signals • Full switch for 6-differential LVDS data signals and 2 differential LVDS clock signals • VDD = 3.3V ±10%
|
Original
|
pi3lvd81218-bit-55db80-pin+11ps9034a5x11mmzp8011b2 diodemotorola diode zpdiode 6b110b110b211b111b212b1
|
PDF
|
|
Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ
|
Original
|
pi3lvd101210-differential24bit-55db+380-pinmo-154c/bc150-mil
|
PDF
|
oz960
Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO
|
Original
|
mpc7450oz96016b3 zener diodezener 13b3+7zener diode 7a3sn02106r-p1016b1 zener diodezener diode 13b3q59 applec5763
|
PDF
|
18b2 diode
Abstract: DIODE 15B2 PI3LVD1012 diode 18b2 PI3LVD1012BE 18b1 diode 15b2 diode 18b2 10B1 10B2
Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ
|
Original
|
pi3lvd101210-differential24bit-55db+1280-pinmo-154c/bc150-mil18b2 diodediode 15b2diode 18b2pi3lvd1012be18b1 diode15b2 diode18b210b110b2
|
PDF
|
10B1
Abstract: 10B2 12B1 12B2 16B1 16B2 QS3165233 DIODE 15B2
Contextual Info: QS3165233 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 50Ω Damping Resistor QS3165233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs
|
Original
|
qs316523356-pin32-bit16-bit+10qs316233qs3162233mdsl-00245-0110b110b212b112b216b116b2diode 15b2
|
PDF
|
OZ960
Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
Contextual Info: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED
|
Original
|
mpc7450oz96022b4 diode zenerc5763+7c19047a3 zener diodeul796258c558a5zener diode 7a39a2 zener diode
|
PDF
|
|
Contextual Info: QuickSwitch Products QS316233 High-Speed CMOS QS3162233 QuickSwitch 32:16 Mux/Demux & c lu c T O R , iN c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay, zero ground bounce
|
OCR Scan
|
qs316233qs316223332-bit16-bit |
PDF
|
SO56-1
Abstract: IDTQS3165233 QS3165233 10B1 10B2 12B1 12B2 16B1 3414a
Contextual Info: IDTQS3165233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX Ω DAMPING RESISTOR WITH 50Ω DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc
|
Original
|
idtqs316523356-pinqs316523332-bit+916-bitso56-1so56-210b110b212b112b216b13414a
|
PDF
|
9b2 diode
Abstract: DIODE 15B2 10B1 10B2 12B1 12B2 16B1 IDTQS3165233 QS3165233
Contextual Info: IDTQS3165233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX Ω DAMPING RESISTOR WITH 50Ω DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc
|
Original
|
idtqs316523356-pinqs316523332-bit+1016-bitso56-1so56-29b2 diodediode 15b210b110b212b112b216b1
|
PDF
|
1562B
Contextual Info: IDTQS316233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX FEATURES: • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Ω bidirectional switches connect inputs to outputs
|
Original
|
idtqs316233qs31623332-bit16-bit+11562b
|
PDF
|
10B1
Abstract: 10B2 12B1 12B2 QS3162233 QS316233
Contextual Info: QS316233, QS3162233 QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux Q QUALITY SEMICONDUCTOR, INC. QS316233 QS3162233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
|
Original
|
qs316233qs316223356-pin32-bit+516-bit10b110b212b112b2
|
PDF
|
|
|
RAS 0510 SUN HOLD
Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :
|
Original
|
ba41-xxxxxshep18050tp18051tp18052+16tp18164tp18170tp18172tp18178tp18183tp18187ras 0510 sun holdsun hold ras 0510sun hold, ras 0510nh82801hbmbd3 c531 diodeschematic diagram hdmi to rcale88clpmu519-120b3 diodeschematic diagram crt tv samsung
|
PDF
|
32 inch TV samsung lcd Schematic
Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A
|
Original
|
965pmba41-0071ba41-00717aba41-00718a+12tp18631tp18634tp18650tp18635tp1863632 inch tv samsung lcd schematicu57427b1 diodeap443522b2 diode58c3slb9635tt1.2
|
PDF
|
C547 c
Abstract: BA41-00811A BA41-00791A R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS
|
Original
|
ba41-00791aba41-00792aba41-00811a800mhz+14rs600mesb6000033nf018nf022nf027nfc547 cr7790samsung praha sri rev 1_0keyboard and touchpad schematicap4435gmsocket am2smd diode code f4521ring
|
PDF
|
BA41-00791A
Abstract: D51233 218S6ECLA21FG BA41-00811A R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS
|
Original
|
800mhzrs600mesb600ba41-00791a+13ba41-00792aba41-00811a022nf027nf047nf0033nfd51233218s6ecla21fgr7790ap680agmsamsung praha sri rev 1_0hdr-10p-1r-smd88e8039
|
PDF
|
2B2 bridge rectifier ic
Abstract: 1B4 SMD 6A8 SMD 4B1 bridge rectifier HFJ11-1G02E Resistor Network Rpack 10K 24vdc5a 6A855 CB47 RECTIFIER RPB11
Contextual Info: Rev: 102108 DS33M30 Demo Kit General Description Features The DS33M30 demo kit DK is an easy-to-use evaluation board for the DS33M30 Ethernet-overSONET/SDH devices. Maxim’s ChipView software is provided with the demo kit, giving point-and-click access to configuration and status registers from a
|
Original
|
ds33m301000pfds33m30dk02a0dp83865bvh+11cr-142b2 bridge rectifier ic1b4 smd6a8 smd4b1 bridge rectifierhfj11-1g02eresistor network rpack 10k24vdc5a6a855cb47 rectifierrpb11
|
PDF
|
ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom
|
Original
|
yonah667sheet18sheet19sheet20+16sheet24sheet25sheet29sheet30sheet32sheet33st t4 d560st d560 t4st 1803 dhib-566u574j551246d1ba09-00009asamsung gddr354b4
|
PDF
|
20B5
Abstract: H47895-001 G46739-001 20B5 voltage G83568-001 A36096
Contextual Info: CR-1 : @GALILEO_LIB.GALILEO SCH_1 :PAGE1 8 7 6 5 4 3 2 1 D D GALILEO GEN2 INTEL QUARK X1000 C C FAB H PB: H48142-207 PBA:H48125-800 B LB6V1 LB1 EMPTY B LB3 LABEL LABEL WEEE_LABEL_9X5MM A WEEE 1500X500_TARGET SERIAL NUMBER 1375X250_TARGET MAC ADDRESS LABEL
|
Original
|
x1000h48142-207h48125-8001500x500+91375x250h386810402lf20b5h47895-001g46739-00120b5 voltageg83568-001a36096
|
PDF
|
B30C300
Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
|
Original
|
ba41-00574ayonah667sheet18sheet19+13047nfrhu002n0612-c4b30c30029a4samsung electronics 10k34c1tp678gfx e3 diodediode 39b2tp730nc7sz175p6x_nlhdr-10p-smd
|
PDF
|
schematic diagram hdmi to rca
Abstract: GFX SE DIODE LE88CLPM NH82801HEM TP16355 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 f8 vga nb8p BA41-00745A
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D MILAN CPU : Chip Set : Remarks :
|
Original
|
ba41-00745asw501a3212elh/hed55xxu12100nf+12mt504tp17294tp17297schematic diagram hdmi to rcagfx se diodele88clpmnh82801hemtp16355ras 0510 sun holdsun hold ras 0510sun hold, ras 0510f8 vga nb8p
|
PDF
|
12B220
Abstract: PS8178 561b
Contextual Info: f j j PER ICOM 3.3V, Synchronous 16-Bit to 32-Bit FET Mux/Demux BusSwitch Product Features Product Description • Near-Zero propagation delay. • 5il Switches Connect Between Two Ports • Packages Available : - 56-pin 240mil Wide Thin Plastic TSSOP A56
|
OCR Scan
|
16-bit32-bit56-pin240mil+6300mil35micronpi3b1623212b220ps8178561b
|
PDF
|