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Contextual Info: MwT-9 ËàkWiü 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r 1 67 +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES p it t iiiim |
OCR Scan |
0000b04 |