137M Search Results

SSM3J321T

Contextual Info: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)

Contextual Info: Ordering number : ENA1822A VEC2616 Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, –60V, –2.5A, 137mΩ, Complementary Dual VEC8 Features • • • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET

Contextual Info: Ordering number : ENA2188 MCH3486 N-Channel Power MOSFET 60V, 2A, 137mΩ Single MCPH3 http://onsemi.com Features • On-resistance RDS on 1=105mΩ(typ.) • Halogen free compliance • 4V drive • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C

Contextual Info: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T Power Management Switch Applications High-Speed Switching Applications • • 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)

ssm3j129

Contextual Info: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1

Contextual Info: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1 Symbol

Contextual Info: Philips Components 100151 Document No. 853-0622 ECN No. 99800 Date of Issue June 14, 1990 Status Product Specification Hex D-Type Master-Slave Flip-Flop ECL Products FEATURES PIN DESCRIPTION •Typical propagation delay: 1.7ns ee : 137mA IEC/IEEE SYMBOL DESCRIPTION

a2188

Contextual Info: Ordering number : ENA2188 MCH3486 N-Channel Power MOSFET 60V, 2A, 137m Single MCPH3 ht t p://onse m i.c om Features • On-resistance RDS on 1=105m (typ.) • Halogen free compliance • 4V drive • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C

Contextual Info: MITSUBISHI RF POWER MODULE M68721 118-137MHz, 12.5V, 10W AM PORTABLE RADIO PIN : Pin VGG ©VDD @PO DGND RF INPUT GATE BIAS SUPPLY DRAIN BIAS SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS (Tc = 2 5 “C unless otherwise noted Symbol V dd V gg Pin Po

ON7EQ

Abstract: vaisala small loop antenna Antenna calculator 299.1 Deutsch DSA005371.txt 70-cm
Contextual Info: Quadrifilar helicoidal antenna - Javascript on-line calculator 1 av 1 Home Antennas QFH Calculator Language: Español Deutsch Introduction Calculator Simulations Dimensions Groundplane Pictures Rendering Version 1 Version 2 Ivan 137MHz ON7EQ 2m ON7EQ 70cm

CDRH4D18

Contextual Info: SMD Power Inductor CDRH4D18 Description • Ferrite drum core construction. • Magnetically shielded. • L W H:5.0 5.0 2.0 mm Max. • Product weight: 137mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×

Contextual Info: Ordering number : EN8699A VEC2315 P-Channel Power MOSFET http://onsemi.com –60V, –2.5A, 137mΩ, Dual VEC8 Features • • • • • ON-resistance RDS on 1=105mΩ(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications

100151Y

Abstract: ECL 100151 100151F 04E33
Contextual Info: Philips Components 100151 Document No. 8 5 3 -0 6 2 2 ECN No. 99800 Date of Issue June 14, 1990 Status Product Specification Hex D-Type Master-Slave Flip-Flop ECL Products FEATURES P IN D E S C R IP T IO N •Typical propagation delay: 1.7ns 137mA D E S C R IP T IO N

BT137S

Contextual Info: Philips Semiconductors Product specification Triacs BT137S series B T 137M s e rie s GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking

PO 118

Abstract: M68721 118-137
Contextual Info: MITSUBISHI RF POWER MODULE M68721 118-137MHz, 12.5V, 10W AM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm PIN : P in ©VGG © VD D P0 ©GND : : : : : RF INPUT GATE BIAS SUPPLY DRAIN BIAS SUPPLY RF OUTPUT FIN H46 ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted

Contextual Info: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)

Contextual Info: High Frequency PECL VCXO GV93 Specifications Variant Parameters 120 ~ 137MHz 144 ~ 168MHz 174 ~ 205MHz 237 ~ 275MHz 288 ~ 336MHz 348 ~ 410MHz 474 ~ 550MHz 576 ~ 672MHz 696 ~ 821MHz ࡯ ࡯ ࡯ ࡯ ࡯ ࡯ ࡯ ࡯ ࡯ Frequency adjustment: ±75ppm min ~ ±140ppm max

Contextual Info: MITSUBISHI RF POWER MODULE bSM-iöST 0 G 1 7 5 D 3 T27 WÊ _ _ _ _ _ _ M68721 118-137MHz, 12.5V, 10W AM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : P in : RF INPU T @VGG : G ATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY ®P0 : RF O UTPUT

Contextual Info: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V

Contextual Info: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V

Contextual Info: SMD Power Inductor CDRH4D18 Description • Ferrite drum core construction. • Magnetically shielded. • L W H:5.0 5.0 2.0 mm Max. • Product weight: 137mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×

SSM3J129TU

Contextual Info: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1

GV93

Abstract: GV93-541 GV93-632
Contextual Info: High Frequency PECL VCXO GV93 Specifications Variant Parameters 120 ~ 137MHz 144 ~ 168MHz 174 ~ 205MHz 237 ~ 275MHz 288 ~ 336MHz 348 ~ 410MHz 474 ~ 550MHz 576 ~ 672MHz 696 ~ 821MHz ࡯ ࡯ ࡯ ࡯ ࡯ ࡯ ࡯ ࡯ ࡯ Frequency adjustment: ±75ppm min ~ ±140ppm max

VDE 0660 iec 947

Contextual Info: LED Signalleuchten LED Indicators Bestell-Nr. Einbaudurchmesser 16mm Body diameter 16mm Farbe V OP *V typ. 'OP typ. + 10% Part No. Colour [VAC] 1940*130M Red 130 600 1940*131M Green 130 40 1940*132M Yellow 130 400 1940*135M Ultra-green 130 510 1940*137M Blue