1350T Search Results

Contextual Info: VCO Product Specification Model: VCO190-1350T Rev: C Date: 4/21/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 1300 1350 1400 MHz X 1 1.7 -35 ° to 85 ° C Remarks Tuning Voltage: 1300 MHz

VCO190-1350T

Contextual Info: VCO Product Specification Model: VCO190-1350T Y Rev: Date: 8/30/2006 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: ( -35 ° to 85 ° C) RoHS Compliant To order models as RoHS Compliant add "Y" suffix to base model number. Parameter Frequency Range -

Contextual Info: VCO190-1350TY -1- 7/2/2007 VCO190-1350TY -2- 7/2/2007

VCO190-1350T

Contextual Info: VCO Product Specification Model: VCO190-1350T Rev: C Date: 4/21/2003 Customer: VARI-L COMPANY Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 1300 1350 1400 MHz X 1 1.7 -35 ° to 85 ° C Remarks Tuning Voltage: 1300 MHz Vdc

VCO190-1350T

Contextual Info: VCO Product Specification Model: VCO190-1350T Y Rev: Date: 8/30/2006 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: ( -35 ° to 85 ° C) RoHS Compliant To order models as RoHS Compliant add "Y" suffix to base model number. Parameter Frequency Range -

schematic diagram ac 150 kva generator

Abstract: SAMI Star LTV 236 wq Circuit Diagram of Fan Speed Control with potenti ALLEN-BRADLEY POTENTIOMETER 81E intel 8085 microprocessor stromberg 800 kva inverter circuit diagrams SEMICONDUCTORS GENERAL CATALOG TRANSISTORS THYRISTORS DIODES LEDS Diode Thyristor 800 kva inverter diagrams
Contextual Info: Aiien-Bradiey Bulletin 1350 Adjustable Frequency AC Motor Drives by Stromberg Instruction and Maintenance Manual For Bulletin 1350 Non-Regenerative Drive sizes: 50 KVA to 1000 KVA @ 460V AC 58 KVA to 1340 KVA @ 575V AC TABLE OF CONTENTS SECTION LIST OF TITLE

EE16

Abstract: 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case
Contextual Info: 2SD826 Ordering number : EN538F SANYO Semiconductors DATA SHEET 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features • • • Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: SONY CXA3008N-11-2 L-band Down Converter 1C Description The CXA3008N-1/-2 is a monolithic IC to downconvert the L-band 1 to 2 GHz signal fo r the satellite broadcasting receiver. It has a double­ balanced m ixer, local o s c illa to r c irc u it and IF

Contextual Info: S/ ROW BREAKAWAY STRAIGHT HEADER 1350 SERIES. 1.27mm 0.050” . For PCB Solder Features Available in 2 through 33 circuits 0.40mm square pin in copper alloy Mates with 2.54mm(.100”) single row housing and Pin length and plating options are available sockets

2SD826

Abstract: EE13 EE16 2sD826 transistor
Contextual Info: Ordering number:EN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009A [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8

Contextual Info: DS1350YUBL m a • I DS1350YL/BL 4096K Nonvolatile SRAM w j^ Battery Monitor a m U A LLA 3 SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. PIN ASSIGNMENT FEATURES • B u ilt-in lith iu m b a tte ry p ro v id e s m o re than 10 y e a rs of

2.2 GHz local oscillator

Abstract: 2.2 GHz local oscillator ic 16PIN 470MHZ CXA3008N-1 CXA3008N-2 950-MHz
Contextual Info: SONY CXA3008N-1/-2 L-band Down Converter IC Description The CXA3008N-1A2 is a monolithic IC to downconvert the L-band 1 to 2 GHz signal for the satellite broadcasting receiver. It has a double­ balanced mixer, local oscillator circuit and IF amplifier on chip.

kijima

Abstract: 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium
Contextual Info: Ordering number:EN550F _ 2SD879 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications A p p licatio n s • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. • The charge time is approximately 1 second faster than th at of germanium transistors.

EE16

Abstract: sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V
Contextual Info: Ordering number:ENN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009B [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6