131-6 WJ 76 Search Results

62792

Abstract: 300/SCR 131- 6 WJ 66
Contextual Info: uuU RA66 / SMRA66 10 to 1000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - THREE STAGES: 37.0 dB TYP. LOW NOISE: <3.5 dB (TYP.) MEDIUM OUTPUT LEVEL: > +15.5 dBm (TYP.) HIGH REVERSE ISOLATION: >50 dB (TYP) Outline Drawings

AMPLIFIER 1800w

Abstract: WJ 58 transistor WJ catalog WJ 83
Contextual Info: u j U LA45-1 / SMLA45-1 1000 to 4000 MHz TO-8 CASCADABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING: GOOD EVEN ORDER SUPPRESSION ♦ HIGH OUTPUT LEVEL: +17 dBm TYP. ♦ MEDIUM GAIN: 14.0 dB (TYP.) ♦ WIDE BANDWIDTH: 0.8-4.2 GHz (TYP.)

bc 2878 transistor

Abstract: WJ A38 WJ-PA38 transistor BC 157 transistor K 2937 bc 2878 transistor bc 146
Contextual Info: uuU PA38-2/ SMPA38-2 200 to 2600 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 200-2800 MHz TYP. HIGH OUTPUT LEVEL: +23.5 dBm (TYP.) GaAs FET AMPLIFIER HIGH THIRD ORDER INTERCEPT POINT: +33 dBm (TYP.) Outline Drawings

WJ-A78

Contextual Info: uuU A78 / SMA78 5 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE: +114 dB/1 MHz HIGH OUTPUT: +19.0 dBm TYR HIGH THIRD ORDER IP: +35 dBm (TYR) LOW NOISE FIGURE: 3.5 dB (TYR) IB Outline Drawings A78 Specifications*

transistor 13000

Contextual Info: u u U A29-1 / SMA29-1 w 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 Specifications 0.200 (5.08) I I I Characteristics Frequency (Min.)

MMIC SOT 363 marking CODE 77

Abstract: SOT 86 MARKING 03 ECG006 ECG006B-G ECG006B-PCB ECG006C-G ECG006C-PCB ECG006F-G ECG006F-PCB marking code s22
Contextual Info: ECG006 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND DC – 5.5 GHz +15.5 dBm P1dB at 1 GHz +32 dBm OIP3 at 1 GHz 15 dB Gain at 1 GHz 3.7 dB Noise Figure Available in lead-free/green SOT-86, SOT-363, & SOT-89 package styles

J 6920

Abstract: J 6920 FET 188 053
Contextual Info: uuU PA48 / SMPA48 1.0 TO 4.0 GHz TO-8B2 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH OUTPUT LEVEL: +24.0 dBm (TYP.) HIGH GAIN: 16.0 dB (TYR) GaAs FET AMPLIFIER Outline Drawings PA48 Specifications’1

ECG002B-G

Abstract: ECG002C-G MMIC SOT 363 marking CODE 81 SOT 86 MARKING 03 ECG002 ECG002B-PCB ECG002C-PCB ECG002F-G ECG002F-PCB SOT-86
Contextual Info: ECG002 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND DC – 6 GHz +15.5 dBm P1dB at 1 GHz +29 dBm OIP3 at 1 GHz 20 dB Gain at 1 GHz 3.8 dB Noise Figure Available in lead-free/green SOT-86, SOT-363, & SOT-89 package styles

Contextual Info: L u ti A57/SMA57 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +14 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +28.0 dBm (TYP.) T< SPlfSSlfii Outline Drawings A 57 Specifications* Characteristics Typical 0° to 50 °C

Contextual Info: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,

MMIC marking CODE l sot 86

Contextual Info: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,

amplifier CV 203

Abstract: TRANSISTOR a45
Contextual Info: u u U A45 / SMA45 1 to 4 GHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN 17.5 dB TYP. LOW NOISE 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Outline Drawings A45 Specifications* Characteristic

ECG004C

Contextual Info: ECG004 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x DC – 6 GHz Product Description x +28 dBm OIP3 at 1 GHz x 16.2 dB Gain at 1 GHz The ECG004 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology

ECG004B-G

Contextual Info: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Lead-free / green SOT-89 pkg • Internally matched to 50 Ω

Contextual Info: uuJ L42 / SML42 50 TO 4000 MHz THIN FILM LIMITER MODULE ♦ AVAILABLE IN SURFACE MOUNT ♦ VERY WIDE BANDWIDTH ♦ GOOD SUPPRESSION OF EVEN ORDER HARMONICS ♦ LOW INSERTION LOSS: 3.5 dB TYP. Outline Drawing Specifications* L42 Characteristics Frequency (Min.)

transistor BC 157

Abstract: WJ-A34 wj a34
Contextual Info: u j U A34/SMA34 100 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN - TWO STAGES: 16 dB TYP. ♦ ULTRALOW PHASE DEVIATION FROM LINEARITY: < ±3° ; 500-2000 MHz ♦ LOW VSWR: <1.5:1 (TYP.) ♦ MEDIUM LEVEL OUTPUT: +7 dBm (TYP.)

Operational amplifier 10358

Abstract: MMIC "SOT 89" marking 12 86 ECG004 MMIC marking CODE l sot 86 ECG004B
Contextual Info: ECG004 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x DC – 6 GHz x +13.5 dBm P1dB at 1 GHz x +28 dBm OIP3 at 1 GHz x 16.2 dB Gain at 1 GHz x 3.2 dB Noise Figure at 2 GHz x Available in SOT-363, SOT-86, SOT-89 and lead-free / green

thyristor t 250 n 1200

Abstract: thyristor td 162 n EUPEC tt 162 n 16 thyristor TT 95 N 1200 thyristor tt 92 n 1200 thyristor tt 162 n TT 95 N 1200 t 250 n 1200 thyristor tt 61 N 1200 EUPEC tt 170 n 08
Contextual Info: Phase control thyristor modules EUPEC Type / ¡ 2dt V drm 't r m sm It s m MTE D It a v m ^ c V TO it 34032*17 DDDD11S ^31 • (di/dt)cr (dv/dt)cr Rthjc R th C K ^vj max Outline V rrm V A 10 m s, 10 m s, I8 0 ° e l tvj = *i D IN Wj m ax sin. = tv| max tv, max

marking 25 mmic sot-89

Abstract: E004G
Contextual Info: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,

MMIC marking code R

Abstract: marking K sot-86
Contextual Info: ECG002 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND DC – 6 GHz +15.5 dBm P1dB at 1 GHz +29 dBm OIP3 at 1 GHz 20 dB Gain at 1 GHz 3.8 dB Noise Figure Available in lead-free/green SOT-86, SOT-363, & SOT-89 package styles

Contextual Info: ECG006 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND DC – 5.5 GHz +15.5 dBm P1dB at 1 GHz +32 dBm OIP3 at 1 GHz 15 dB Gain at 1 GHz 3.7 dB Noise Figure Available in lead-free/green SOT-86, SOT-363, & SOT-89 package styles

hbt sot-86

Contextual Info: ECG002 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • • • • • • • • DC – 6 GHz 20 dB Gain @ 1 GHz +15.5 dBm P1dB @ 1 GHz +29 dBm OIP3 @ 1 GHz 3.8 dB Noise Figure Internally matched to 50 Ω Robust 1000V ESD, Class 1C

E006G

Contextual Info: ECG006 InGaP HBT Gain Block Product Features Product Description • • • • • • • • The ECG006 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG006 typically provides 15

TRANSISTOR BC 158

Abstract: transistor BC 157 BC 148 transistor WJ-A35 transistor BC 154
Contextual Info: uud A35/SMA35 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +9 dBm TYP. ♦ WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS Outline Drawings A35 Specifications* 0.450 r, (1U1) U 0 200 (5.06) Characteristics Frequency (Min.)