13003 SD Search Results

transistor 13002

Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

13002

Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

13002 TRANSISTOR

Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

S JE 13003

Contextual Info: 8.20±0.03 A-A SECTION /^ A PPLIES TO CIRCUIT NUMBER:36,67 /SXAPPLIES TO CIRCUIT NUMBER:THE OTHERS 4. COPLANARITY BETWEEN SOLDER TAILS IS 0.10mm MAX. 5. TRUE POSITION BETWEEN SOLDER TAILS IS 0.I5 mm MAX. A6-PRODUCT SPEC : PS-67 160-0 I A 8 . FINISH: SELECTIVE GOLD Au IN CONTACT AREA.

13003 charger

Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26

Contextual Info: White Electronic Designs W3EG6432S-D3 PRELIMINARY* 256MB- 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of eight 32Mx8 DDR

Contextual Info: White Electronic Designs W3EG7264S-D3 PRELIMINARY* 512MB- 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

Contextual Info: White Electronic Designs W3EG7264S-D3 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

DDR200

Abstract: DDR266 DDR333 DDR400 42704
Contextual Info: White Electronic Designs W3EG7264S-JD3-D3 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

reset samsung 1665

Abstract: DDR200 DDR266 DDR333 DDR400 13003 TO 92 PACKAGE
Contextual Info: White Electronic Designs W3EG7264S-JD3-D3 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

Contextual Info: White Electronic Designs W3EG7264S-JD3-D3 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184

Contextual Info: W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY* 1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG72126S is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eighteen 128Mx4

DDR200

Abstract: DDR266 DDR333 W3EG72126S-D3 DEVICE MARKING CODE T10C 13003 d
Contextual Info: W3EG72126S-D3 -JD3 -AJD3 White Electronic PRELIMINARY* 1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG72126S is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eighteen 128Mx4

7475 latch

Abstract: Register 7475 DDR200 DDR266 DDR333 W3EG72126S-D3
Contextual Info: W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY* 1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG72126S is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eighteen 128Mx4

DDR200

Abstract: DDR266 DDR333 DDR400 W3EG6432S-D3
Contextual Info: W3EG6432S-D3 -JD3 White Electronic Designs PRELIMINARY* 256MB – 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 32Mx8 DDR

DDR200

Abstract: DDR266 DDR333 DDR400 W3EG6432S-D3
Contextual Info: W3EG6432S-D3 -JD3 White Electronic Designs PRELIMINARY* 256MB – 32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6432S is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 32Mx8 DDR

LED lighting

Abstract: transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification 23/10V 3W LED DRIVER
Contextual Info: Innovative PowerTM ACT364 DESIGN GUIDE Jun 2014 Innovative LED Solutions AC/DC LED Lighting PRODUCT SELECTION GUIDE LED Lighting Reference Rev3.1 Apr 2011 Designs June 2014 Copyright 2014 Active-Semi International, Inc. - - www.active-semi.com www.active-semi.com

MHT1810

Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

DTS108

Abstract: 2n2585 DTS103 DTS106 BUY27
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

A400M

Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2SC102 transistor

Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

ZT2015

Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

B170008

Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

13009 Jt 43

Abstract: pj 72 4006A Darfon 13003 HJ TO 92 4006a E 13007 0 13001 LZ DF 13003 4034b 13009 FSC
Contextual Info: MIL-M-38510/57D 30 April 1984 su p e r s e m i r e MIL-M-38510/57C 21 M a y 1 9 8 0 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, POSITIVE LOGIC CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d ments a nd