g 13003
Abstract: LM 13003
Contextual Info: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa
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t/13003sgs13002sgs13003ot-82+6sgs13002tsgs13003tmje13002o-126g 13003lm 13003
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E 13003 TRANSISTOR
Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique
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t-33-ii0in41i3-7515a3din+10e 13003 transistorc s 13003 transistorw 13003 transistor13002 transistortransistor 13002lm 13003t 08 13003 transistortransistor lb 13003 celectronic ballast by transistor 1300313003 transistor
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13003 TRANSISTOR equivalent
Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
Contextual Info: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS
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mje13002/do-225aa13003 transistor equivalenttransistor sw 13003+8transistor eb 13003 aje 13003transistor eb 13003j e 13003 motorola transistormje13002mje13003s je 1300313002 and 13003 power transistortr 13003 transistor
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13002 npn
Abstract: transistor 13002 13002 transistor ST-13002 13002 transistor TO-92 13002 13002 power transistor ST 13002 transistor 13002 TO 05 ,st 13002
Contextual Info: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400
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13002 npntransistor 1300213002 transistorst-13002+513002transistor to-92 1300213002 power transistorst 13002transistor 13002 to 05
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PC 13003 TRANSISTOR
Abstract: PC 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR 13002 13003 transistor 13003 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn
Contextual Info: MJE13002 NPN MJE13003 (NPN) SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating 13002 Collector-base voltage Vcb 600 Collector-emitter voltage Vceo 300 Emitter-base voltage Veb 9 Collector current (DC) Ic 1.5 Collector current (Pulse)
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mje13002mje13003o-126pc 13003 transistor+9pc 1300313003 transistortransistor 1300213002 transistor1300213003transistor 1300313003 transistor pc 13003 transistor13003 transistor npn
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transistor 13002
Abstract: 13002 npn ST-13002 transistor TO-92 13002 13002 transistor 13002 ST 13002 13002 TO-92 ST13002 13002 power transistor
Contextual Info: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400
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transistor 1300213002 npnst-13002transistor to-92 13002+613002 transistor13002st 1300213002 to-92st1300213002 power transistor
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HF 13003
Abstract: 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a ^ Q O 't e DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique
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t-33-11hf 1300313003electronic ballast 13003+713002sw 13003lb 13002br 1300313003 circuithf 13002h 13003
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X 13003
Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn
Contextual Info: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique
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r-33-1100ihb34t-33-11x 13003+913002d 13003 x13003sa 1300213003 df 1300313003 helectronic ballast 1300313002 npn
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3DD13002
Abstract: 06-CL
Contextual Info: TO-251 Plastic-Encapsulate Transistors 3D D 13002 TR A N SISTO R N PN FEATURES Power dissipation TO -2 5 1 Pcm; 1.25W (Tam b=25°C ) C o llecto r current 1 .BASE Icm- 2 .C O LLE C T O R 1A C ollecto r-b ase voltage 3 .E M IT T E R V(BR)CBO: 600 V u O perating and storage ju n ctio n tem perature range
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o-2513dd1300206-cl |
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si 13001 transistor
Abstract: transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF transistor x 13001 TRANSISTOR si 13001 13001 TRANSISTOR transistor s 13001
Contextual Info: BA13001 /BA13001F/BA13002/BA13002F B A 1 3 0 0 1 / B A 1 3 0 0 1 F B A 1 3 0 0 2 / B A 1 3 0 0 2 F • 7 -r -f □ - 7 i - X Interface Driver for Microcontroller Peripherals and Displays • i f E l / D i m e n t i o n s Unit : mm BA13001, B A 13002, BA13001F, B A 13002F IJ,
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ba13001/ba13001f/ba13002/ba13002fba13001f13002f+12ba13002ba13002fsi 13001 transistortransistor x 13002diagram transistor 13001transistor di 13001transistor te 1300113001 hftransistor x 13001transistor si 1300113001 transistortransistor s 13001
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transistor 13002
Abstract: KSE13002 13002 to-126 TRANSISTOR KSE13002HE13002 transistor13002 13002 TRANSISTOR 13002 npn D142AG-00
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13002 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:D142AG-00 芯片厚度:240±20µm 管芯尺寸:1420x1420µm 2 焊位尺寸:B 极 300×245µm 2,E 极 350×245µm 2
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100mmd142ag-00kse13002he13002o-126+1010maib10vic200ma100matransistor 13002kse1300213002 to-126 transistortransistor1300213002 transistor13002 npn
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13002 l
Abstract: c s 13002 TRANSISTOR transistor BR 13002
Contextual Info: M C C TO-251 Plastic-Encapsulate Transistors 3D D 13002 TRANSISTOR NPN FE A T U RE S L TO-251 P cm: 1.2 5W (Tam b=25°C ) 1 .B A S E Icm: 1 A 2 .C O L L E C T O R I M M * « * » 'voltage' V(BR)CBO: 600 V 3 . E M IT T E R 1 2 S B fftfcra tin g a n d s to r a g e ju n c t io n te m p e r a tu r e ra n g e
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o-2513dd1300213002 lc s 13002 transistor+1transistor br 13002
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13002
Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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sd13002sd13003o-92l100ma+9130021300313003 transistortransistor 1300213002 transistortransistor 13003transistor 13003 ac s 13003 transistor13002 and 13003 power transistor
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13002 TRANSISTOR
Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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sd13002sd13003o-92l100ma+1013002 transistortransistor 1300213003 transistor1300213003transistor 1300313002 and 13003 power transistorc s 13003 transistorbr 13003w 13003 transistor
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transistor TO-92 13002
Abstract: 13002 TO-92 transistor x 13002 13002 T CSD 13002 13002 TRANSISTOR transistor 13002 tr 13002 transistor 13002 to-92 13002 TO 92 PACKAGE
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"
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csd13002c-120290307etransistor to-92 13002+913002 to-92transistor x 1300213002t csd 1300213002 transistortransistor 13002tr 13002transistor 13002 to-9213002 to 92 package
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transistor w 13002
Abstract: 13002 and power transistor 13002 TRANSISTOR transistor TO-92 13002
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"
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csd13002c-120290307etransistor w 13002+313002 and power transistor13002 transistortransistor to-92 13002
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transistor sw 13003
Abstract: sw 13003 E 13003 TRANSISTOR 13003 TRANSISTOR transistor 13003 k 13002 TRANSISTOR Sw 13003 c transistor 13003 d 13003 x T 13003 transistor
Contextual Info: Te m ic TD13002 • TD13003 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIG H SPEED technology Very low dynam ic saturation • Glass passivation Very low operating tem perature • Very short sw itching tim es High reverse voltage
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td13002td13003ol13002t0252+10transistor sw 13003sw 13003e 13003 transistor13003 transistortransistor 13003 k13002 transistorsw 13003 ctransistor 13003d 13003 xt 13003 transistor
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QPP-010
Abstract: H10536
Contextual Info: QPP-010 60W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-010 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations. The power transistors are
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qpp-010925-960mhzh10536h11029 |
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QPP-014
Contextual Info: QPP-014 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-014 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are
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5W amplifier tone
Abstract: QPP-304
Contextual Info: QPP-304 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-304 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are
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qpp-3042110-2170mhzh108905w amplifier tone |
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transistor t114
Abstract: transistor 13002 to-92
Contextual Info: LESHAN RADIO COMPANY, LTD. LR257 AC/DC Current Mode PWM power management controller The LR257 AC—DC is a high efficiency current-mode PWM power supply controller。 It drives an external NPN transistor for high voltage switching. Apply with BiCMOS technology, the
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lr257en55022a150khz10mhz+330mhztransistor t114transistor 13002 to-92
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transistor x 13001
Abstract: c s 13001 TRANSISTOR diagram transistor 13001 BA13002 transistor c s x 13001 all transistor 13001 transistor s 13001 c s x 13001 H 06 BA13002F A13001
Contextual Info: BA13001 /B A 13001F/BA13002/BA13002F BA1 3 0 0 1 / B A 1 3 0 0 1 F BAI 3 0 0 2 / B A 1 3 0 0 2 F Interface Driver for Microcontroller Peripherals and Displays • Dimentions Unit : mm The BA13001, BA13001F, BA13002, and BA13002F are large current transistor arrays with 6 Darlington
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ba1300113001f/ba13002/ba13002fba13001fba13002+10ba13002f320matransistor x 13001c s 13001 transistordiagram transistor 13001transistor c s x 13001all transistor 13001transistor s 13001c s x 13001 h 06a13001
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transistor 13002
Abstract: 13002 transistor transistor 13002 TO 05 QPP-008 all transistor 13002 13002 power transistor transistor w 13002
Contextual Info: QPP-008 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-008 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power
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qpp-008925-960mhzh10890transistor 13002+513002 transistortransistor 13002 to 05all transistor 1300213002 power transistortransistor w 13002
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act30bht
Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
Contextual Info: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation
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act3065khz100khzact30bht+913003 transistor power supply circuitsact30bht-a13003 mosfet transistoract30aht-a13002 and 13003 power transistoract30be 13003 transistornpn transistors 400v low power to92flyback 13003
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