13000 TRANSISTOR Search Results

transistor bf 760

Abstract: MCH4008 945 npn
Contextual Info: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

sanyo eg 8500

Abstract: transistor 9747 MCH4009
Contextual Info: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

sanyo eg 8500

Abstract: sanyo 14500 82306 MCH4009 MJE 13500 marking GG
Contextual Info: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

Contextual Info: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

Contextual Info: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating

transistor d 2389

Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

TRANSISTOR K 2191

Abstract: nec 2761
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

2SK281

Abstract: sl2109
Contextual Info: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

Contextual Info: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

NEC k 2134 transistor

Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Contextual Info: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

CY2291

Abstract: CY2291F CY2291FI CY2291I CY2292 CY2295 ICD2023 ICD2028 laptop intel MOTHERBOARD CIRCUIT diagram ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Contextual Info: 5 CY2291 Three-PLL General Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2291 or field-programmable Programming support available for all opportunities

CY3670

Abstract: CY2291 CY2292 CY2292F CY2292FI CY2292FZ CY2292I CY2295 ICD2023 ICD2028
Contextual Info: CY2292 Three-PLL General-Purpose EPROM Programmable Clock Generator Features Benefits • Three integrated phase-locked loops • EPROM programmability • Generates up to three custom frequencies from external sources • Factory-programmable CY2292 or field-programmable (CY2292F) device options

CY2291

Abstract: CY2292 CY2292F CY2292FI CY2292FZ CY2292I CY2295 ICD2023 ICD2028 ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Contextual Info: 5 CY2292 Three-PLL General-Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2292 or field-programmable Programming support available for all opportunities

CY2291

Abstract: CY2291F CY2291FI CY2291I CY2292 CY2295 ICD2023 ICD2028 laptop intel MOTHERBOARD CIRCUIT diagram ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Contextual Info: 5 CY2291 Three-PLL General Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2291 or field-programmable Programming support available for all opportunities

transistor NEC D 822 P

Abstract: NEC D 822 P C10535E NE434S01 NE434S01-T1 NE434S01-T1B
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

low noise, hetero junction fet

Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent

AM/SSC 9500 ic data

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

K 1358 fet transistor

Abstract: NE334S01 nec 2761 s11 diode shottky C10535E NE334S01-T1 NE334S01-T1B
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

transistor ne425s01

Abstract: NEC Ga FET marking L C10535E NE425S01 NE425S01-T1 NE425S01-T1B NEC Ga FET marking C
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent

NEC Ga FET marking L

Contextual Info: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

transistor mesfet

Abstract: mesfet lnb NE72118 NE72118-T1 NE72118-T2 lnb schematic 12-GHz
Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm (1.3) 0.3 -0.05 +0.1 +0.1 4 1 PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain 0 to 0.1 NEC's stringent quality assurance and test procedures ensure

C10535E

Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
Contextual Info: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES

free circuit diagram of laptop motherboard do

Abstract: laptop motherboard circuit diagram ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Contextual Info: CY2291 Three-PLL General Purpose EPROM Programmable Clock Generator Features Functional Description • Three integrated phase-locked loops ■ EPROM programmability ■ Factory-programmable CY2291 or field-programmable (CY2291F) device options The CY2291 is a third-generation family of clock generators. The

Contextual Info: 2SK2332 GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR Unit in mm SHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure : NF = 0.65dB f=12GHz High Gain : Ga= lldB (f= 12GHz) M A X IM U M RATIN G S (Ta = 25°C)