12W 97 Search Results

urb2405mp-12w

Abstract: URB4805MP-12W urb2412 urb2405mp12w 020inc
Contextual Info: URB_MP-12W Series 12W, WIDE INPUT, ISOLATED & REGULATED SINGLE OUTPUT DC-DC CONVERTER multi-country patent protection FEATURES RoHS PRODUCT PROGRAM Efficiency up to 88% Wide 4:1 Input Range 12W Rated Power Output 1.5KVDC Input/Output Isolation Operating Temperature: -40°C to+85°C

AN3019

Abstract: MAAP-000078-PKG001 MAAP-000078-SMB001 MAAP-000078-SMB004 MAAPGM0078-DIE AN3016
Contextual Info: Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev B Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage 8-10V Operation ♦ MSAG Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with on-chip bias

Contextual Info: LJjÿ ITYLEDTRONICS, INC: 0 ^ THE FUTURE OF LIGHT Luminaire Photom etric Report Filenam e: P A R 3 0-12W -X P W -001M -W M anufacturer: LEDTRONICS Luminaire: C L E A R LENS, 120VAC, 12.5W Luminaire Cat: PA R 30-12W -XPW -001M -W Lamp: LUM EN RATING: 652.8Lrns

MAX 8997

Abstract: HPQ-12W
Contextual Info: Surface Mount HPQ-12W+ HPQ-12W Power Splitter/Combiner 2 Way-90° 50Ω 940 to 1130 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 1W max. CASE STYLE: AT577 PRICE: $6.95 ea. QTY (10-49)

Contextual Info: Surface Mount HPQ-12W+ HPQ-12W Power Splitter/Combiner 2 Way-90° 50Ω 940 to 1130 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 1W max. CASE STYLE: AT577 PRICE: $6.95 ea. QTY (10-49)

MAX 8997

Abstract: HPQ-12W
Contextual Info: Surface Mount HPQ-12W+ HPQ-12W Power Splitter/Combiner 2 Way-90° 50Ω 940 to 1130 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 1W max. CASE STYLE: AT577 PRICE: $6.95 ea. QTY (10-49)

MAAPGM0078-DIE

Contextual Info: Amplifier, Power, 12W 2.0-6.0 GHz MAAPGM0078-DIE Rev A Preliminary Datasheet Features ♦ 12 Watt Saturated Output Power Level ♦ Variable Drain Voltage 8-10V Operation ♦ MSAG Process Description The MAAPGM0078-DIE is a 2-stage 12W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both

7263M

Contextual Info: ^ 7 # , [MtMtiktEOTi «® r= J TDA7263M S G S -T H O M S O N 12 +12W STEREO AMPLIFIER WITH MUTING • WIDE SUPPLY VOLTAGE RANGE ■ HIGH OUTPUT POWER 12+12W @ Vs=28V, R l = 8Q, THD=10% . MUTE FACILITY POP FREE WITH LOW CONSUMPTION ■ AC SHORT CIRCUIT PROTECTION

SRW20EF

Abstract: SRW20EF-X46H014 SMD EZ 648 fan102 PC47 TDK variac used as a battery charger NICHiCON KZ SRW20EF-X nichicon vR FAN102SZ
Contextual Info: www.fairchildsemi.com FEB226 User’s Guide Universal Input 12W LED Ballast Featured Fairchild Product: FAN102SZ Page 1 of 43 Rev 1.0, 07/2006 www.fairchildsemi.com

Contextual Info: 976nm HHL Packaged Window Output Diode Laser K98S09W-2.50W K98S09W-5.00W K98S09W-6.00W K98S09W-12.00W Key Features： Š 2.5W, 5W, 6W, 12W output power Š 976nm wavelength Š Window packages Applications： Š Solid-state laser pumping Š Medical/ophthalmic

MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

transistor SMD 12W

Abstract: smd transistor 12W 3 pins SMD 12W 12W SMD 12w smd transistor VPOL20A-12W-SIP VPOL20A-12W-SMT 103 smt resistor
Contextual Info: VPOL20A-12W-SMT Data Sheet Features * Industry standard pin out * High efficiency to 94% * 300 KHz switching frequency * 6.0-14 VDC wide input range * 0.75-5.0 VDC wide output range * Over temperature protection * Continuous short circuit protection * Remote on/off

78s12

Abstract: RD12MVS1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

VPOL16A-12W-SIP

Contextual Info: VPOL16A-12W-SIP Data Sheet Features * Industry standard pin out * High efficiency to 94% * 300 KHz switching frequency * 9.0-14 VDC wide input range * 0.75-5.0 VDC wide output range * Over temperature protection * Continuous short circuit protection * Remote on/off

transistor SMD 12W

Abstract: smd transistor 12W 3 pins 12W SMD smd 12W 3 pins SMD 12W VPOL16A-12W-SMT C9018
Contextual Info: VPOL16A-12W-SMT Data Sheet Features * Industry standard pin out * High efficiency to 94% * 300 KHz switching frequency * 9.0-14 VDC wide input range * 0.75-5.0 VDC wide output range * Over temperature protection * Continuous short circuit protection * Remote on/off

transistor+SMD+12W+MOSFET

Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

TAS5729MD

Contextual Info: DCA-48 TSSOP 12.5mm ´ 8.1mm TAS5729MD www.ti.com SLOS836A – MAY 2013 – REVISED JUNE 2013 12W I²S Input Class-D Amplifier with Digital Audio Processor and DirectPath HP / Line Driver Check for Samples: TAS5729MD FEATURES APPLICATIONS • • •

MAX 8997

Contextual Info: Mini-Circuits - Specification for Power Splitter - HPQ-12W Power Splitter Notes: • Aqueous washable. • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article. • Matched power rating: 1 Watt.

217F

Abstract: VPOL20A-12W-SIP
Contextual Info: VPOL20A-12W-SIP Data Sheet Features * Industry standard pin out * High efficiency to 94% * 300 KHz switching frequency * 6.0-14 VDC wide input range * 0.75-5.0 VDC wide output range * Over temperature protection * Continuous short circuit protection * Remote on/off

12W SMD

Abstract: smd transistor 12W 3 pins transistor SMD 12W VPOL10A-12W-SMT
Contextual Info: VPOL10A-12W-SMT Data Sheet Features * Industry standard pin out * High efficiency to 90% * 300 KHz switching frequency * 6.0-14 VDC wide input range * 0.75-5.0 VDC wide output range * Over temperature protection * Continuous short circuit protection * Remote on/off

VPOL10A-12W-SIP

Contextual Info: VPOL10A-12W-SIP Data Sheet Features * Industry standard pin out * High efficiency to 90% * 300 KHz switching frequency * 6.0-14 VDC wide input range * 0.75-5.0 VDC wide output range * Over temperature protection * Continuous short circuit protection * Remote on/off