12V IGBT 20A Search Results
12V IGBT 20A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
12V IGBT 20A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GT20G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VcE sat = 8-OV (Max.) (IC = 130A) |
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GT20G102 -I-19V | |
vqe 24 d
Abstract: GT20G102 vqe 208 e
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GT20G102 vqe 24 d GT20G102 vqe 208 e | |
thyristor inverter
Abstract: dc to ac inverter by thyristor thyristor inverter circuits Gate Turn-off Thyristor 600V 20A 300V switching thyristor 600v 20a IGBT INVERTER 1A 12V thyristor 12V it 1A thyristor inverter schematics
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7MBR20SC060 thyristor inverter dc to ac inverter by thyristor thyristor inverter circuits Gate Turn-off Thyristor 600V 20A 300V switching thyristor 600v 20a IGBT INVERTER 1A 12V thyristor 12V it 1A thyristor inverter schematics | |
thyristor inverter
Abstract: dc to ac inverter by thyristor sine wave inverter DIODE MARKING GU INVERTER 1A 12V thyristor inverter circuits dc ac inverter schematic igbt Emitter Turn-Off thyristor 300V switching thyristor Gate Turn-off Thyristor 600V 20A
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7MBR20SC060 thyristor inverter dc to ac inverter by thyristor sine wave inverter DIODE MARKING GU INVERTER 1A 12V thyristor inverter circuits dc ac inverter schematic igbt Emitter Turn-Off thyristor 300V switching thyristor Gate Turn-off Thyristor 600V 20A | |
THYRISTOR 1A 300V
Abstract: design sine wave power inverter Gate Turn-off Thyristor 600V 20A thyristor 12V it 1A 7MBR20SC060
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7MBR20SC060 THYRISTOR 1A 300V design sine wave power inverter Gate Turn-off Thyristor 600V 20A thyristor 12V it 1A 7MBR20SC060 | |
Contextual Info: FGA90N33AT tm 330V, 90A PDP Trench IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.1V @ IC = 20A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. |
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FGA90N33AT FGA90N33AT | |
Contextual Info: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C |
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94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. | |
C-150
Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH
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94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH | |
C-150
Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
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94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K | |
FGA20N120FTDContextual Info: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V |
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FGA20N120FTD FGA20N120FTD | |
FGA20N120
Abstract: FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A FGA20N120FTD igbt 20A 1200v 12v igbt 20a
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FGA20N120FTD FGA20N120FTD FGA20N120 FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A igbt 20A 1200v 12v igbt 20a | |
igbt 400V 20A
Abstract: 600v 20a IGBT fgp20n60ufd 400v 20A ultra fast recovery diode FGP20N60UFDTU igbt 600V 20a 12v igbt 20a SMPS 30v 20a
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FGP20N60UFD O-220 FGP20N60UFD igbt 400V 20A 600v 20a IGBT 400v 20A ultra fast recovery diode FGP20N60UFDTU igbt 600V 20a 12v igbt 20a SMPS 30v 20a | |
Contextual Info: FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.2V @ IC = 20A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction |
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FGH20N60SFD FGH20N60SFD | |
Contextual Info: FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 20A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series |
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FGP20N60UFD O-220 FGP20N60UFD | |
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600v 20a IGBT
Abstract: fgh20n60 FGH20N60SFD FGH20N60SFDTU igbt 400V 20A 600v 20a diode 12v igbt 20a
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FGH20N60SFD FGH20N60SFD 600v 20a IGBT fgh20n60 FGH20N60SFDTU igbt 400V 20A 600v 20a diode 12v igbt 20a | |
400v 20A ultra fast recovery diodeContextual Info: FGAF20N60SMD 600V, 20A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder and SMPS applications where low conduction and switching losses are essential. |
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FGAF20N60SMD FGAF20N60SMD 400v 20A ultra fast recovery diode | |
FGB20N60SF
Abstract: FGB20N60 igbt 400V 20A IGBT welder circuit igbt 600V 20a
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FGB20N60SF O-263AB/D2-PAK 100oC FGB20N60SF FGB20N60 igbt 400V 20A IGBT welder circuit igbt 600V 20a | |
fga20s120m
Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
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FGA20S120M fga20s120m 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a | |
Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens |
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IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ | |
Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens |
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IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ | |
igbt 600V 20aContextual Info: FGB20N60SF 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and |
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FGB20N60SF O-263AB/D2-PAK 100oC igbt 600V 20a | |
Contextual Info: FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and |
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FGB20N60SFD O-263AB/D2-PAK 100oC | |
igbt 400V 20A
Abstract: IGBT welder circuit 400v 20A ultra fast recovery diode FGB20N60SF 20A igbt 12v igbt 20a FGB20N60SFD 10a 400V ultra fast diode d2pak
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FGB20N60SFD O-263AB/D2-PAK 100oC igbt 400V 20A IGBT welder circuit 400v 20A ultra fast recovery diode FGB20N60SF 20A igbt 12v igbt 20a FGB20N60SFD 10a 400V ultra fast diode d2pak | |
Contextual Info: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverters and other applications where |
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FGB20N60SFD AEC-Q101 |