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Contextual Info: H A R R I S SEfllCOND S E C T O R £ *? H A R R I S U U HARRIS RCA GE MOE D • 4 3 0 2 27 1 0 0 3 3 7 3 a 3 B HAS OBJECTIVE FRS9440D - H " '! RDS on =4.22n 2 .5 A .-S 0 0 V INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power M O SFETs

Contextual Info: H A R R IS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRM9250 D, R, H 2N7324D, 2N7324R 2N7324H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 16A,-200V, RDS(on) = 0.30012 TO-2Q4AA • Second Generation Rad Hard MOSFET Results From New Design Concepts