12L12 Search Results

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1280 PRELIMINARY Die size: 12.6 x 12.6 mm Doc. No. 5SYA1309-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1262 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1631-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1274 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1304-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

84256-10

Abstract: 84256 84256-10 LL 84256-15 84256-12 FPT2 ic 84256 A
Contextual Info: F U JIT S U CMOS 262144-BIT STATIC RANDOM ACCESS MEMORY MB 84256-10 10L10LL MB 84256-12 12L12LL MB 84256-15/15L/15LL August 1986 Edition 2.0 256K-BIT 32,768 x 8 CM OS STA T IC R AN D O M ACCESS M E M O R Y WITH D A T A R ET EN T IO N A N D LOW POWER T h e F u jits u M B 8 4 2 5 6 is a 3 2 ,7 6 8 -w o rd b y 8 -b it sta tic ra n d o m access m e m ­

5SMX 12L1280

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1280 Die size: 12.6 x 12.6 mm Doc. No. 5SYA1309-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications

5SLX12H1200

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1273 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1634-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: b3E D • 7*1*170 7 b LC7565, 7565A, 7565B DÜ117HH 444 ■ TSA J SANYO SEMICONDUCTOR CORP 3118 3025B C M O S LSI VFD Driver for Display of Graphic Equalizer I6I6G Use FLT d riv e r for sp e ctru m a n a ly z e r d isp lay an d d riv e r for s e ttin g p o in t of g ra p h ic e q u a liz e rs

AA871

Abstract: 263 qfn TO-263 5pin Package 20L SOT-23 PACKAGE OUTLINE qfn 48 6201ll 16L3
Contextual Info: REV: 0909-0707-01 Part Ⅰ Package Outline Drawing 1 Table of Contents Part Ⅰ - Package Outline Drawing DIPDIP-8 PACKAGE OUTLINE DRAWING - Ⅰ-1

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

ksl microdevices

Abstract: 12L15 48L05 15L12 05L05 05L0505 05L09 05L0909 05L12 12L12
Contextual Info: K S L NICRODEVICES INC "ÌS DE | SDMflflBb □□□□135 fl “7~ - S ~ '7 - S / jLtPOWER 4.5 Watts Miniature High Isolation Single/Dual DC-DC Converters Features • Surface mount technology ■ Up to 4.5 watts output power ■ High power density ■ High efficiency

84256-10l

Abstract: 84256-10 84256 84256-15 8425610l 84256 A M884256 84256-12 15L15LL AQ1019
Contextual Info: FUJITSU MICROELECTRONICS FU JITSU 23E D STATICRANDO a c c e ss m e m o r : • 374T7b2 0007710 7 MB 84256-lO/lOL/lOLL MB 84256-12/12L/12LL MB 84256-15/15L/15LL August 1986 Edition 2.0 256K-BIT 32,768 x 8 CMOS STA TIC RANDOM ACCESS MEMORY WITH DATA RETEN TIO N AND LOW POWER

Contextual Info: . « i >« « w DATA ► / ELECTRON DEVICE / SHEET - MOS _/ IN T E G R A T E D C IR C U IT / ¿ P D 4 3 2.5 6 A F 256K-BIT CMOS STATIC RAM DESCRIPTION The ¿ft>432$SA >e » hish »peed, 1 » power, J2K words by 8 bite CMOS ctatie RAM fabrieeted with advanced

16L-QFN

Abstract: 263 qfn EIA 481 QFN ALF sot-23-5
Contextual Info: REV: 0909-0707-01 Part Ⅰ Package Outline Drawing Part Ⅱ Carrier Tape Outline Drawing Part Ⅲ Reel Outline Drawing 1 Table of Contents Part Ⅰ - Package Outline Drawing DIPDIP-8 PACKAGE OUTLINE DRAWING - Ⅰ-1

LTS360P

Abstract: LTS-360 clts LTS-360R
Contextual Info: I IT C VIJI 0.36" Single Digit Numeric LED Displays LI I CL“ J WI LTS-360 Series •0.36 inch 9.14mm digit height •Continuous uniform segments. •Choices of five bright colors-red/bright red/green/orange/high efficiency red. •Low power requirement.

PDIP300

Abstract: AS7CS12-15PC ITT Industries PRODUCT GUIDE International rca 645 RCA 719 st zo 607 sv micro hq 64KX8 7C256 3935-01
Contextual Info: H ig h P erfo rm an ce A S 7 C 5 12 64K X 8 A S 7 C 5 1 2L C M O S SRAM 6 4 K X 8 C M O S SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access tim e - 3 / 4 / S / 6 / 8 ns output enable access tim e