12H1280 Search Results

MJ86

Abstract: 57 A
Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 PRELIMINARY Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications

Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1

Contextual Info: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1