12H1 Search Results

Contextual Info: TB230P-12H12

5SLX12E1200

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1273 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1641-00 Apr 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1262 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1629-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

MJ86

Abstract: 57 A
Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 PRELIMINARY Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: A B C F D REVISIONS SYM ZONE EON, E ERN NO. J U N 0 8 /1 3 PROPOSAL 4^ APPRD. DATE L.CHAN TYPICAL FOR SINGLE COLOR LED RED, GREEN; OR YELLOW -D > h 4- -4y 10y 12H1 9 LED YELLOW LED SCH EM ATIC PARAMETER PEAK WAVELENGTH LUMINOUS LUMINOUS (IE = 2 m A ) .5 4 0

GL112R13

Abstract: GL112 GL112C11 GL112R1 GL112H13 GL112R GL-112H13 GL-112R13
Contextual Info: GL112C11 3 Series LEDs for Bar Graphic Display 12-Dots Array LED GL1 12U 13 Series H Model No. GaP GL112R13 Red GL1 12H13 Yellow GaAsP/GaP 9 Features 1. Radiation shape per dots 2.2 x 5.3mm 2. Outline dimensions 7.0 X 70.4mm 3. 12 dots case mold type • Outline Dimensions

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications

Contextual Info: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1200 Die size: 9.1 x 9.1 mm Doc. No. 5SYA1638-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1274 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1302-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

isv149

Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229
Contextual Info: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application

er36 transformer

Contextual Info: S TANDARD PRO DUCT PM PMC-Sierra, inc. PM 7345 S/UNI-PDH ISSUE 5 SATURN User Network Interface forPD H PM7345 S/UNI- fTM PDH S/UNI-PDH S A T U R N U s e r N e t w o r k I n t e r f a c e for A T M P l e s i o c h r o n o u s Di gi t al H i e r a r c h y Pre lim ina ry

dSMC

Abstract: WinChip-2 Phoenix BIOS manual f.34 cyrix Cyrix 6x86mx AK-02 diode T35 12H P54C P55C TR12
Contextual Info: Preliminary Information PROCESSOR Data Sheet Preliminary Information April 1999 IDT WINCHIPTM 3 PROCESSOR DATA SHEET This is Version 0.9 of the IDT WinChip 3 Processor data sheet. The latest versions of this data sheet may be obtained from www.winchip.com

philips td 1318 af

Abstract: ISP1161A1BM intel embedded microcontroller handbook ISP1161A1BD ISP1161A1 LQFP64 PID controller
Contextual Info: ISP1161A1 Universal Serial Bus single-chip host and device controller Rev. 02 — 25 August 2003 Product data 1. General description The ISP1161A1 is a single-chip Universal Serial Bus USB Host Controller (HC) and Device Controller (DC). The Host Controller portion of the ISP1161A1 complies with

1553 bus

Abstract: HM-65664 80C31M
Contextual Info: 5öbß45b QÜ0E3M3 1ÖT • MMHS January 1991 Preview MATRA H H S 29C530 HI-REL DATA SHEET MIL-STD-1553B PROTOCOL MANAGEMENT UNIT FEATURES . PIN PROGRAMMABLE FEATURES : - COMPATIBILITY WITH INTEL AND MOTOROLA MICROPROCESSORS - 8 OR 16 BIT INTERFACE - SUPPORT OF THREE MEMORY INTERFACE

Contextual Info: M65665DSP PICTURE-IN-PICTURE SIGNAL PROCESSING REJ03F0012-0100Z Rev.2.00 Sep.04.2003 Description The M65665DSP is a PIP Picture in Picture signal processing LSI, whose sub-picture input is composite signal or component signals(Y/C or Y/U/V) for NTSC , PAL-M , PAL-N. The built-in field memory (168k-bit RAM) , V-chip

Contextual Info: M65665CFP/SP PICTURE-IN-PICTURE SIGNAL PROCESSING REJ03F0011-0100Z Rev.2.00 Sep.04.2003 Description The M65665CFP/SP is a PIP Picture in Picture signal processing LSI, whose sub-picture input is composite signal or component signals(Y/C or Y/U/V) for NTSC.

Contextual Info: M65665DSP PICTURE-IN-PICTURE SIGNAL PROCESSING REJ03F0012-0100Z Rev.2.00 Sep.04.2003 Description The M65665DSP is a PIP Picture in Picture signal processing LSI, whose sub-picture input is composite signal or component signals(Y/C or Y/U/V) for NTSC , PAL-M , PAL-N. The built-in field memory (168k-bit RAM) , V-chip

12H562

Abstract: panasonic plastic film capacitor marking code 10h9 ZR8513 H8822 H12H102 marking ZR 12H112
Contextual Info: Film Capacitors High-Voltage Metallized Polypropylene ECW-H Series This series is designed for applications where high frequency, high pulse voltage and high current are required. Features • • • • Very low loss at high frequency Very small inherent temperature rise

AJ314

Abstract: usb joystick circuit diagram intel 945 crb VIP 22 A CS130 RC5 Infrared 38b A216 SC2200UFH-300 SC3200 DOC2000
Contextual Info: Geode SC2200 Thin Client On a Chip General Description The Geode™ SC2200 Thin Client On a Chip device is a member of the National Semiconductor IA Information Appliance On a Chip family of fully integrated x86 system chips. The Geode SC2200 includes:

Contextual Info: IgT Integrated Telecom Technology, Inc. E3 Framer EAC-030-A User’s Manual Copyright 1994 -1 9 9 7 Integrated Telecom Technology, Inc. All Rights Reserved Integrated Telecom Technology, Inc. 18310 Montgomery Village Avenue, Suite 300 Gaithersburg, MD 20879 USA

LAMBDA alpha 400w service MANUAL

Abstract: LAMBDA Alpha ii 650W circuit SDA 1000W inverter circuit diagram tdk lambda alpha 400w atx - 500w power supply output diagram 2000W inverter circuit diagram 48vdc to 230vac inverters circuit diagram LAMBDA Alpha 600W circuit LAMBDA Alpha 600W circuit diagram sda 5222
Contextual Info: Lambda for Low Cost of Ownership The choice and application of the power supply is an important one. Working with Lambda can help you save time and money, from design concept to years after your system or product is first installed. Why Lambda? ‹ Over the last 59 years, Lambda has developed a worldwide