12G4 Search Results

Brown Boveri induction Motor

Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Contextual Info: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C

VII150-12G4

Abstract: IC100 Igbt base induction heat circuit igbt for induction heating ic
Contextual Info: IGBT Module Half-Bridge Configuration VII150-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C

Contextual Info: TOSHIBA SM 12G45,SM 12J45,SM 12G45A,SM 12J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE 12G45, SM12J45, 12G45A, SM12J45A Unit in mm AC POWER CONTROL APPLICATIONS • • • • Repetitive Peak Off-StateVoltage : Vj R]y[ = 400, 600V R.M.S On-State Current

Contextual Info: □IXYS IGBT Module VI1200-12G4 IC DC Half-Bridge Configuration V, CES V CE(sat) = 200 A = 1200 V = 2.9 V High Short Circuit SOA Capability Symbol Test Conditions V CES V CGR ^ Vt ges Maximum Ratings = 25°C to 150°C 1200 V 1200 V Continuous ±20 V v GEM

IC100

Abstract: VII125-12G4
Contextual Info: IGBT Module Half-Bridge Configuration VII125-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C

Contextual Info: HÔE D VITESSE S E M I C O N D U C T O R • ^ 5 0 2 33 1 VITESSE Q D D 0 7E 4 fl02 * V T S V SM 12G 484 Product Preview 4 K x 4 Self-Timed Static RAM 7^ V C -¿L FEATURES FUNCTIONAL DESCRIPTION The VSM 12G484 is a fully decoded 16,384 bit ECL com patible GaAs SRAM designed for

Contextual Info: □IXYS IGBT Module Half-Bridge Configuration VII100-12G4 ^C DC = 100 A V CES = 1200 V V CE (sat) = 2.6 V High Short Circuit SOA Capability Symbol Test C onditions V CES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; RGE = 1 MQ V GES v GEM Continuous Transient

VII50-12S3

Abstract: VIE 200-12S4 100-12S4 VH100 VID200-12S4 VII-50 VDI200-12S4 VIE 150-12S4 TOOC
Contextual Info: IGBT Modules iI “w t1I L VCES Type Tjm = 150»C VII 50-12G3 V II75-12G3 VI1100-12G3 ,:V too^c . •; V : 1200 VII50-12S3 VII75-12S3 VII100-12S3 1200 VID 50-12S3 VID75-12S3 VI01QO-12S3 1200 VDI 50-12S3 VDI75-12S3 VD1100-12S3 1200 Vil 100-12G4 VII125-12G4

Contextual Info: □IXYS IGBT Module Half-Bridge Configuration VII150-12G4 ^c dc VCES —150 A = 1200 V H ig h S h o rt C irc u it S O A C a p a b ility Symbol Test Conditions VCES v CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 MQ 1200 V VGES v GEM Continuous

12J5GT

Abstract: 12J5-GT 12J5 12G4 Scans-0017283
Contextual Info: TENTATIVE DATA I2G4 f - - TONS- SSL TRIODE MINIATURE TYPE 3‘ -T MAX. COATED UN IPOTENTIAL CATHODE HEATER 12.6 VOLTS 0.15 AMP. 2— AC OR DC 2f ANY MOUNTING POSITION w BOTTOM VIEW GLASS BULB M I N I A T U R E BUTTON 7 PIN BASE THE 12G4 IS A MEDIUM MU TRIODE IN THE 7 PIN MINIATURE CONSTRUCTION. ITS

Contextual Info: □ IXYS IGBT Module VII125-12G4 IC DC Half-Bridge Configuration V , CES = 125 A = 1200 V V CE(sat) = 2.9 V High Short Circuit SOA Capability Symbol Test C onditions VCES Tj = 25°C to 150°C T,J = 25°C to 150°C;’ RCat ^ = 1 M fl Maximum Ratings 1200

IC100

Abstract: VII100-12G4
Contextual Info: IGBT Module Half-Bridge Configuration VII100-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C

12j45

Abstract: M12J45 M12G45 12G45 T M12J45 12G45A
Contextual Info: TOSHIBA SM 12G45,SM 12J45#SM 12G45A#SM 12J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE 12G45, SM12J45, 12G45A, SM12J45A Unit in mm AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vd r m = 400, 600V R.M.S On-State Current

32f8120

Abstract: RE LOG 2 TZ 11
Contextual Info: SSI 32F8120 ¿émsuskms Low-Power Programmable Electronic Filter A TDK Group/Company January 1994 DESCRIPTION FEATURES The SSI 32F8120 is a continuous time, low pass filter with programmable bandwidth and high frequency boost. The low pass filter is a 2 zero/ 7 pole 0.05° phase

Contextual Info: KA7522 ELECTR O NICS Industrial BALLAST CONTROL 1C 22 SDIP The KA7522 is a electronic ballast controller for fluorescent inverter syst­ ems. It contains whole function in KA7521, current feed back and prehea­ ting time controlled by temperature sensing.

NTC-10

Abstract: 12V 2A SMPS circuit diagram power supply IRF830 APPLICATION 2SC5039 MF 71 NTC power supply IRF830 APPLICATION 12v diac gv ELECTRONIC BALLAST 12v capacitor 450V 4.5 MF st microelectronics c15
Contextual Info: KA7524 LINEAR INTEGRATED CIRCUIT POWER FACTOR CONTROLLER DESCRIPTION TheContek KA7524 provides the necessary features to implement the Electronic BALLAST control and S.M.P.S application for designing active power factor correction circuit FEATURES *Internal self-starting

2SC5039

Abstract: power supply IRF830 APPLICATION 12v zener 7524 12G471 any circuit using irf830 7524-D08-T 7524L-D08-T 7524-S08-R 7524-S08-T power supply IRF830 APPLICATION
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7524 LINEAR INTEGRATED CIRCUIT POWER FACTOR CONTROLLER DIP-8 DESCRIPTION The UTC 7524 provides the necessary features to implement the Electronic BALLAST control and S.M.P.S application for designing active power factor correction circuit

LA 7522

Abstract: ic la 7522 BALLAST 12V ELECTRONIC BALLAST 12v 390KD
Contextual Info: KA7522/D DIMMING BALLAST CONTROL 1C BALLAST CONTROL 1C The KA7522 is a electronic ballad controller for fluorescent inverter syst­ ems. tt contains whole unction in KA7521, current feed back and prehea­ ting time controlled by temperature sensing. FEATURES

power supply IRF830 APPLICATION

Abstract: ic sk 383 zener diode 1n4148 gP DIODE ths 16v KA75248 pfc ic
Contextual Info: KA7524B PFC 1C POWER FACTOR CONTROLLER The KA7524B provides the necessary feature« to implement the Electronic BALLAST control and S M P .S application for desig­ ning on active power factor correction circuit. FEATURES • • • • • Internal self-starting

zener diode ST 4148

Abstract: Zener Diode 4148 zener T 4148 FR-107 diode ZENER diode t 4148 zener diode 4148 circuit diagram 1n 4148 zener diode diode st 4148 diode 4937 T 4148 zener
Contextual Info: KA7524 LINEAR INTEGRATED CIRCUIT a dip POWER FACTOR CONTROLLER The K A 7 5 2 4 provides the necessary features to im plem ent the E lectronic BALLAST control and S.M.P.S app licatio n for d e s ig ­ n ing on active pow e r fa cto r co rrectio n circuit. FEATURES

12G471K

Abstract: 10D-11 ntc 10D-11 10D-11 NTC 12v ballast ic electronic ballast for multiplier fluorescent lam E1619 dimming ballast control IC t3 electronic ballast ELECTRONIC BALLAST 12v
Contextual Info: KA7522/D DIMMING BALLAST CONTROL IC BALLAST CONTROL IC 22 DIP The KA7522 is a electronic ballast controller for fluorescent inverter systems. It contains whole function in KA7521, current feed back and preheating time controlled by temperature sensing. FEATURES

T2D9

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7524 LINEAR INTEGRATED CIRCUIT POWER FACTOR CONTROLLER DIP-8 DESCRIPTION The UTC 7524 provides the necessary features to implement the Electronic BALLAST control and S.M.P.S application for designing active power factor correction circuit

12sn7gt

Abstract: 12Sn7 12H4 TRIODE itl 12G4 Scans-0017284
Contextual Info: SYLVAMY SYLVANIA engineering data service QUICK R E F E R E N C E DATA MECHANICAL DATA Bulb . T-5V2 Base .Miniature Button 7-Pin

Contextual Info: LINEAR INTEGRATED CIRCUIT KA7524 POWER FACTOR CONTROLLER The KA7524 provides the necessary features to implement the Electronic BALLAST control and S.M.P.S application for desig­ ning on active power factor correction circuit. FEATURES • • • • •