12DEC2002 Search Results

CR10

Abstract: M58WR032EB M58WR032ET VFBGA56
Contextual Info: M58WR032ET M58WR032EB 32 Mbit 2Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR D1 E D 776487-2 SCALE 776487-4 776487-3 2:1 SCALE SCALE 2:1 2:1 DESCRIPTION DATE DWN APVD REVISED PER ECO-11-005294 30APR2011 RK HMR REVISED PER ECO-13-019168