12DBM Search Results

FMC2122LN-03

Abstract: k-band amplifier
Contextual Info: FMC2122LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

Rogers-4003

Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
Contextual Info: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS

KC2-50

Abstract: 26X1
Contextual Info: Frequency Multiplier Doubler KC2-50+ Typical Performance Curves Conversion Loss X2 Output Harmonic X1 Output 16 30 Conversion Loss (dB) Harmonic Ouput (-dBc) Conversion Loss X2 Output @RF IN=+7dBm 15 Conversion Loss X2 Output @RF IN=+12dBm 14 13 12 11 10

FMC1819LN-02

Abstract: Fujitsu Ku microwave
Contextual Info: FMC1819LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

ADL5382

Abstract: C-7X tone center tap transformer for rf signal
Contextual Info: Preliminary Technical Data 400 to 6000MHz Quadrature Demodulator ADL5380 FEATURES I/Q Demodulator RF frequency 400 MHz to 6000MHz IIP3 +31 dBm IIP2 +60dBm Input P1dB +12dBm NF 13.2 dB @ 2.5GHz Voltage Conversion Gain of 4dB Quadrature demodulation accuracy

4977 gm

Abstract: MGF0919A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

FPM21500QFN

Abstract: 22nH 33PF
Contextual Info: EB21500QFN-AA FPM21500QFN 1.7 - 2.0GHz LNA EVALUATION BOARD FEATURES Measured @ 1.85GHz • 29 dBm Output Power • 16.5 dB Small Signal Gain • 0.60 dB Noise Figure • 38 dBm OIP3 measured @ Pout = 12dBm per tone ● Bias 4V, 100mA DESCRIPTION AND APPLICATIONS

Contextual Info: LTC5536 600MHz to 7GHz Precision RF Detector with Fast Comparator Output FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 600MHz to 7GHz* Wide Input Power Range: –26dBm to 12dBm

AB-DRO-14.5GHZ

Contextual Info: 14.5GHz Dielectric Resonator Oscillator AB-DRO-14.5GHz Pb RoHS Compliant FEATURES: • High Carrier Frequency –14.5GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min) • Excellent VSWR characteristics

AB-PLLDRO-12.8GHZ

Abstract: dielectric resonator oscillator
Contextual Info: 12.8GHz Dielectric Resonator Oscillator AB-PLLDRO-12.8GHz Pb RoHS Compliant FEATURES: • High Carrier Frequency –12.8GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min) • Excellent VSWR characteristics

MARKING PB

Contextual Info: 12.8GHz Dielectric Resonator Oscillator AB-PLLDRO-12.8GHz Pb RoHS /RoHS II Compliant FEATURES: • High Carrier Frequency –12.8GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min)

Contextual Info: F| .ÇjU-, FMC2122LN-03 J Ku, K-Band Power GaAs M odules FEATURES • • • • • • • High Output Power: P-i ^ b = 12dBm Typ. High Gain: G-ih r = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50Q

FMC2223LN-03

Abstract: fujitsu k-band
Contextual Info: FMC2223LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

RN antenna design

Abstract: omnix om-310 wireless water level sensors circuit diagram RN-171 temperature wireless sensor pcb RN171 OM-310 802.11 dipole wifi 95032 analog sensor
Contextual Info: RN-171 Data Sheet www.rovingnetworks.com RN-171-DS v1.0 1/24/2011 WiFly GSX 802.11 b/g Wireless LAN Module Features • FCC / CE/ IC certified 2.4GHz IEEE 802.11b/g transceiver • Small form factor: 1050 x 700 x 130 mil • Controllable output power: 0dBm to 12 dBm

AD9755

Abstract: AD9755AST AD9755ASTRL AD9755-EB P1B10 MHz VCO C0225
Contextual Info: FEATURES 14-Bit Dual Muxed Port DAC 300 MSPS Output Update Rate Excellent SFDR and IMD Performance SFDR to Nyquist @ 25 MHz Output: 71 dB Internal Clock Doubling PLL Differential or Single-Ended Clock Input On-Chip 1.2 V Reference Single 3.3 V Supply Operation

RL0503-5820-97-MS

Abstract: PPTC091LFBN BR-MSC40A-TMP Bluestamp
Contextual Info: Secure, Versatile and Award Winning Network Radio Devices. Mega BlueStamp Wireless Temperature Module BR-MSC40A-TMP Class1, 2, and 3 Bluetooth® ver2.0 OUTLINE AT HOME. AT WORK. ON THE ROAD. USING BLUETOOTH WIRELESS TECHNOLOGY MEANS TOTAL FREEDOM FROM THE CONSTRAINTS AND CLUTTER OF WIRES IN

Buffer Amplifier Ghz

Abstract: THM2004J
Contextual Info: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

PNH15

Abstract: SS1103C SS1107 transistor P43 smd
Contextual Info: 7/16/98 SS1103C Single-Chip Spread Spectrum Processor for Digital Cordless Phone External Specification PRELIMINARY V 1.1
     
 
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fsk dtmf circuit diagram

Abstract: CF8223A BELLCORE FSK DTMF fsk circuit DTMF DEcoder FREQUENCY datasheets 1N4003 1N4004 GR-30-CORE FSK TO DTMF DTMF DEcoder FREQUENCY
Contextual Info: CF8223A FSK Decoder and DTMF Receiver IC OVERVIEW The CF8223A is a FSK Frequency shift keying decoder and DTMF (Dual tone multi-frequency) receiver IC. It is fabricated using a CMOS process and features a power-down function for low power dissipation operation. The FSK decoder and DTMF receiver have the same performance characteristics as dedicated ICs that

SM7060

Abstract: 140MHz IF demodulator IC SD7060 SD706 AN993 ISL83700EVAL ISL83740EVAL ISL87060 ISL87060DIK DIN616
Contextual Info: Intersil's ISL83700EVAL and ISL83740EVAL Evaluation Kits provide a means to efficiently evaluate the performance of the ISL837030/ISL83740 Modem Reference Designs and ISL87060 Modem Chip Set. This kit includes everything needed to exercise and monitor the performance of the modem in a laboratory environment.

Contextual Info: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications

TRANSISTOR R1002

Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing

Contextual Info: RF2337 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2337 is a general purpose, low-cost RF amplifier

NJG1128HB6

Abstract: HK1005 LQW15A
Contextual Info: NJG1128HB6 450MHz Band LNA GaAs MMIC !GENERAL DESCRIPTION NJG1128HB6 is a LNA IC designed for 450MHz band CDMA cellular phone. This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen. High IIP3 and a low noise are achieved at the High gain mode.