2SA968B
Abstract: 2SC2238B AC75
Contextual Info: 45E D Bi SDS7ZSD □ □17fiDcì □ « T O S M TOSHIBA TRANSISTOR_ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2SC2238B (DISCRETE/OPTO) Unit in POWER AMPLIFIER APPLICATIONS. 1Q .3M A X. DRIVER STAGE AMPLIFIER APPLICATIONS.
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17fidcl100mhz2sa968b2sc2238b+2-55vl50ac75
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2SA968B
Abstract: 2SC2238B AC75
Contextual Info: 45E D Bi SDS7ZSD □ □17fiDcì □ « T O S M TOSHIBA TRANSISTOR_ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2SC2238B (DISCRETE/OPTO) Unit in POWER AMPLIFIER APPLICATIONS. 1Q .3M A X. DRIVER STAGE AMPLIFIER APPLICATIONS.
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17fidcl100mhz2sa968b2sc2238b+2-55vl50ac75
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr
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2SD843
Abstract: 2SB753
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD843 INDUSTRIAL APPLICATIONS _ Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX. 05.6ÍO.2 FEATURES: • Low Saturation Voltage ' 0 : vCE sat =0-5V (Max.) (at Ic =4A) • Complementary to 2SB753.
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2sd8432sb75312ch240 |
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