12TQ040 Search Results

Contextual Info: VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base cathode 2 D2PAK • • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy

D2PAK-6

Abstract: 12TQ 12TQ045S 40HFL40S02 IRFP460
Contextual Info: 12TQ035SPbF, 12TQ040SPbF, 12TQ045SPbF Vishay High Power Products Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: 12TQ035 /S 12TQ040 /S 12TQ045 /S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0020, Rev. - Green Products 12TQ035/S/ 12TQ040/S / 12TQ045/S SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Redundant power subsystems Converters

Contextual Info: 12TQ040 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current15 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.990 V(FM) Max.(V) Forward Voltage.64 @I(FM) (A) (Test Condition)30

VS-12TQ045SPbF

Abstract: 12TQ 12TQ045S 40HFL40S02 IRFP460
Contextual Info: VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF Vishay High Power Products Schottky Rectifier, 15 A FEATURES • • • • Base cathode 2 • 3 Anode 1 D2PAK N/C • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy

12TQ

Abstract: 12TQ035 12TQ040 12TQ045 40HFL40S02 IRFP460
Contextual Info: 2002-02-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-222-47 12TQ035 sch diodTO-220AC 70-222-62 12TQ040 sch diodTO-220AC 70-222-88 12TQ045 sch diodTO-220AC PD-2.239 rev. A 12/97

Contextual Info: VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF Vishay High Power Products Schottky Rectifier, 15 A FEATURES • • • • Base cathode 2 • 3 Anode 1 D2PAK N/C • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy

Contextual Info: VS-12TQ035S-M3, VS-12TQ040S-M3, VS-12TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base cathode 2 D2PAK • • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base cathode 2 D2PAK • • • • 150 °C TJ operation Very low forward voltage drop High frequency operation High purity, high temperature epoxy

12TQ

Abstract: 12TQ035 12TQ040 12TQ045 40HFL40S02 IRFP460
Contextual Info: 12TQ. Series Vishay High Power Products Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation • Very low forward voltage drop • High frequency operation Base cathode 2 • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info:




















2
SENSITRON  
2 


2 
SEMICONDUCTOR



Technical
Data







Data Sheet 2874, Rev.
2 2  2 

 
 







•
  p  s ••  ••   d 

Contextual Info: VS-12TQ.PbF Series, VS-12TQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 15 A FEATURES Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

12TQ

Abstract: 12TQ035 12TQ040 12TQ045 12TQ045S 40HF P460 SMD-220 PD-20239
Contextual Info: Bulletin PD-20239 rev. C 06/06 12TQ. 12TQ.S SCHOTTKY RECTIFIER 15 Amp IF AV = 15Amp VR = 35/ 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 15 A 35 / 45 V waveform VRRM range IFSM @ tp = 5 s sine

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

203CNQ100

Abstract: 122NQ030R MBR1535 21FQ040 121NQ035 189NQ
Contextual Info: Schottky Diodes www.irf.com Part Number V RRM V I FAV @TC (A) (C) VFM @I FM I RM @VRWM E AS I AR 25°C 25°C (mA) (mA) (mJ) (A) Max T J (°C) Fax on Demand Number Case Outline Key Surface-Mount Packages SMB 10BQ100 100 1 152 0.78 10BQ015 15 10BQ040 40 10BQ060

Contextual Info: Bulletin PD-20239 09/00 12TQ. 12TQ.S SCHOTTKY RECTIFIER 15 Amp IF AV = 15Amp VR = 35 to 45V Major Ratings and Characteristics Characteristics Description/ Features The 12TQ. Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info:




















2
SENSITRON  
2 


2 
SEMICONDUCTOR



Technical
Data







Data Sheet 2874, Rev.
2 2  2 

 
 







•
  p  s ••  ••   d 

12TQ

Abstract: 12TQ045S 40HFL40S02 IRFP460
Contextual Info: 12TQ.SPbF Vishay High Power Products Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 Available • Very low forward voltage drop RoHS* • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for

Contextual Info: Bulletin PD-21023 rev. A 06/06 12TQ.SPbF SCHOTTKY RECTIFIER 15 Amp IF AV = 15Amp VR = 35/ 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 15 A 35 / 45 V waveform VRRM range IFSM @ tp = 5 s sine

18T0045

Abstract: 12t0035 12t0045 MBR1535 MS1635 12TQ035 12TQ040 12TQ045 18TQ035 18TQ040
Contextual Info: 16 Amp Schottky Barrier Rectifiers MS1635 MS1645 —c Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode M illim eter Maximum Minimum .390 .045 .180 .245 .550 .139 .100 .415 .055 .190 .260 .650 .155 .120 .250 .580 .210 .025 .115 .038 .055