12L1280 Search Results
12L1280 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1280 PRELIMINARY Die size: 12.6 x 12.6 mm Doc. No. 5SYA1309-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide |
Original |
12L1280 5SYA1309-01 CH-5600 | |
5SMX 12L1280Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1280 Die size: 12.6 x 12.6 mm Doc. No. 5SYA1309-03 04 14 • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications |
Original |
12L1280 5SYA1309-03 CH-5600 5SMX 12L1280 |