12AUG02 Search Results

PPA-GF15

Abstract: EIA-364-13 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 EIA-364-32 EIA-364
Contextual Info: tifca Electronics 108-1956 Product Specification 12Aug02 Rev B EC 0990-1294-02 PC/104 and PC/104-Plus Connector Systems 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics PC/104 and PC/104-Plus connector systems in both stackthrough and non-stackthrough styles. The PC/104

80c164

Abstract: 80C167 Controller 80C196 instruction set intel 80c196 INSTRUCTION SET 80C196 80C31 MC68HC16 PSD4256G6V TQFP80 80C186
Contextual Info: PSD4256G6V Flash In-System Programming ISP Peripherals for 8-bit or 16-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ DUAL BANK FLASH MEMORIES – 8 Mbits of Primary Flash Memory (16 uniform sectors, 64Kbyte) – 512 Kbits of Secondary Flash Memory

Si1900DL

Contextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code

Contextual Info: SD5000I-2 Vishay Siliconix N-Channel Lateral DMOS FET Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) 20 1.5 70 @ VGS = 5 V 0.5 2 FEATURES BENEFITS APPLICATIONS D D D D D D

Si1553DL

Abstract: D234
Contextual Info: Si1553DL Vishay Siliconix Complementary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel -20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = -4.5 V "0.44 1.800 @ VGS = -2.5 V "0.32 SOT-363 SC-70 (6-LEADS)

Contextual Info: S20 / A20, S40, S50 Vishay Thin Film Single Value Chip Resistors FEATURES • 20, 40, 50 Mil Square Size. • Resistance Range: Silicon Substrate 20 x 20 size - 4.7 ohms to 1M ohm 40 x 40 size - 500K to 2.6M ohms 50 x 50 size - 1M to 5.2M ohms (Alumina Substrate)

Si1553DL

Contextual Info: Si1553DL Vishay Siliconix Complementary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel -20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = -4.5 V "0.44 1.800 @ VGS = -2.5 V "0.32 SOT-363 SC-70 (6-LEADS)

ILC-0402

Contextual Info: ILC-0402 Vishay Dale Multi Layer High Frequency Ceramic Inductor Surface Mount FEATURES • High reliability. • Surface mountable. • Reflow or wave solderable. • Tape and reel packaging per EIA specifications: 4000 pieces on 7" reel. MECHANICAL SPECIFICATIONS

ILC-0603

Contextual Info: ILC-0603 Vishay Dale Multi Layer High Frequency Ceramic Inductor Surface Mount FEATURES • High reliability. • Surface mountable. • Reflow or wave solderable. • Tape and reel packaging per EIA specifications: 4000 pieces on 7" reel. MECHANICAL SPECIFICATIONS

Si1907DL

Contextual Info: Si1907DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.650 @ VGS = -4.5 V "0.56 0.925 @ VGS = -2.5 V "0.47 1.310 @ VGS = -1.8 V "0.39 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QC XX

80C196 instruction set

Abstract: t6ue 80C51XA motorola 68hc11 schematic programmer 80c164 fs1231 memory space of 80196 80c196 application note 16 bit 80196 intel 80c196 INSTRUCTION SET
Contextual Info: PSD4256G6V Flash in-system programmable ISP peripherals for 8-bit or 16-bit MCUs Features • ■ ■ ■ Dual bank Flash memories – 8 Mbits of primary Flash memory (16 uniform sectors, 64 Kbytes) – 512 Kbits of secondary Flash memory with 4 sectors

Si1902DL SOT-363

Abstract: marking code pa Si1902DL "marking code PA"
Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code

SUP28N15-52

Contextual Info: SUP28N15-52 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 28 0.060 @ VGS = 6 V 26 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS

Si7388DP

Contextual Info: SPICE Device Model Si7388DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1553DL

Contextual Info: Si1553DL Vishay Siliconix Complementary 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel -20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 0.995 @ VGS = -4.5 V "0.44 1.800 @ VGS = -2.5 V "0.32 SOT-363 SC-70 (6-LEADS)

sd5000i

Abstract: ultra FAST DMOS FET Switches AN502 SD5000I-2
Contextual Info: SD5000I-2 Vishay Siliconix N-Channel Lateral DMOS FET Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) 20 1.5 70 @ VGS = 5 V 0.5 2 FEATURES BENEFITS APPLICATIONS D D D D D D

Contextual Info: Si1907DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.650 @ VGS = -4.5 V "0.56 0.925 @ VGS = -2.5 V "0.47 1.310 @ VGS = -1.8 V "0.39 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QC XX

Contextual Info: FO-50360-L 1 2 3 4 5 6 7 8 CW-B1653 H 9 10 REV DOCUMENT 5 0086919 CHANGED BY VKR CHECK 28FEB12 CMH H .165 .11 G G 3X .187 #.003 .40 PLASTIC PLUNGER F F .796 #.010 .11 .047 MAX PRETRAVEL .114 #.002 HOLE .040 .110 E E 3X .020 #.001 .11 .578 #.015 OPERATING POSITION

SI7540DP

Contextual Info: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET

MIL-C-15305

Abstract: IMS-2 LT10K
Contextual Info: IMS-2 Vishay Dale Inductors Military, MIL-C-15305 Qualified, Type LT and Commercial, Molded, Shielded, Miniature FEATURES • Flame retardant coating. • Electromagnetic shield. • Small package for a shielded inductor. • Epoxy molded construction provides superior moisture protection.

PCH410

Abstract: Si1539DL Marking code rc
Contextual Info: Si1539DL Vishay Siliconix Complementary 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 0.940 @ VGS = -10 V -0.45 1.700 @ VGS = -4.5 V -0.33 SOT-363 SC-70 (6-LEADS) 1

Contextual Info: TJ Vishay Dale Inductors Toroid, High Current FEATURES • Printed circuit mounting. • Wide range of inductance and current ratings. • Toroid design reduces EMI. • Vertical or horizontal mounting to optimize P.C. Board layout. APPLICATIONS Switching power supplies, EMI/RFI filtering, output chokes.

ROM. In-system programming c167

Abstract: PC646
Contextual Info: PSD4256G6V Flash In-System Programming ISP Peripherals for 8-bit or 16-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • DUAL BANK FLASH MEMORIES – 8 Mbits of Primary Flash Memory (16 uniform sectors, 64Kbyte) – 512 Kbits of Secondary Flash Memory with 4 sectors

Si1551DL

Contextual Info: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = -4.5 V -0.44 1.600 @ VGS = -2.7 V -0.34 1.800 @ VGS = -2.5 V -0.32