128KX8BITS Search Results

Contextual Info: eeeo 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • ■ ■ ■ ■ ■ ■ ■ The 48F010 is a 1024K bit CMOS FLASH EEPROM organizedas 128Kx8bits. SEEQ‘s48F010 brings together the high density and cost effectiveness of UVEPROMs,

4200R

Contextual Info: Dynamic RAMs Capacity 1M 2M 4M 8M Organization Type No. 128KX8bits LC371000SP LC371OOOSM . LC3710OOSP LV . LC3710OOSM(LV) . LC37110OSP . LC37110OSM . LC37110OSP(LV) . LC37110OSM(LV) .

Contextual Info: seeQ 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Description Features • ■ 128K Byte Flash Erasable Non-Volatile Memory Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ ■ ■ Input Latches tor Writing and Erasing

MPC860 memory controller

Abstract: MPC860 pci schematics 9054RDK-860
Contextual Info: CompactPCI 9054RDK-860 Reference Design Kit with PCI SDK for PCI 9054 Highlights • PCI v2.1 compliant CompactPCI adapter board based on the powerful PLX PCI 9054 Bus Master I/O Accelerator chip with direct connect to Motorola MPC860 PowerQUICC ■ 50MHz Motorola MPC860

Contextual Info: seeQ 47F010 1024K Bit Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • ■ ■ ■ ■ ■ 128K Byte Flesh Erasable Non-Volatile Memory Input Latches for Writing and Erasing Low Power CMOS Process Flash EPROM Cell Technology Fast Byte Write: 225 ys max

TMP91PW12

Contextual Info: TOSHIBA TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91PW12 TO SHIBA CORPORATION Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, "Points of Note and Restrictions". Especially, take care below cautions.

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

Seeq

Abstract: A12C
Contextual Info: eeeQ 47F010 1024K Bit Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • ■ ■ ■ 128K Byte Flash Erasable Non-Volatile Memory Input Latches for Writing and Erasing Low Power CMOS Process Flash EPROM Cell Technology m Fast Byte Write: 225 fjs max