128-MBIT FLASH Search Results

LRS1815

Abstract: LRS1B11 LRS1821 128M-BIT sharp LRS1360 128-MBIT
Contextual Info: NEW PRODUCT INFORMATION LRS1B14 128-Mbit Flash Memory+128-Mbit Flash Memory+64-Mbit RAM+8-Mbit SRAM Combination Memory Under development < Outline > LRS1B14, consisting of a 128-Mbit flash memory, a 128-Mbit flash memory, a 64-Mbit RAM, and a 8-Mbit SRAM, is a composite

LRS1821

Abstract: 128M-BIT LRS1830 sharp LRS1360 IC-E102 128-MBIT
Contextual Info: NEW PRODUCT INFORMATION LRS1830 128-Mbit Flash Memory+128-Mbit Flash Memory+32-Mbit RAM Combination Memory Under development < Outline > LRS1830, consisting of a 128-Mbit flash memory, a 128-Mbit flash memory, and a 32-Mbit RAM, is a composite memory chip that is

28f128j3d75

Abstract: 28f320j3d75 28F640J3D75 JS28F128J3D-75 28F128J3D-75 JS28F320J3D-75 28F128J3d 28F640J3D 28F320J3D-75 28f256j3d
Contextual Info: Numonyx Embedded Flash Memory J3 v D 32, 64, 128, and 256 Mbit (Monolithic) Datasheet Product Features „ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks)

JS28F128J3D-75

Abstract: JS28F640J3D75 RC28F128J3D-75 TE28F128J3D75 TE28F128J3D-75 RC28F128J3D75 PC28F640J3D75 PC28F320J3D75 RC28F128J3D TE28F640J3D-75
Contextual Info: Intel Embedded Flash Memory J3 v. D (32, 64, and 128 Mbit) Datasheet Product Features • ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32

RC28F128J3D-75

Abstract: PC28F128J3D-75 PC28F640J3D-75 JS28F128J3D-75 RC28F128J3D JS28F320J3D-75 te28f640j3d JS28F640J3D75 TE28F128J3D TE28F128J3D-75
Contextual Info: Intel Embedded Flash Memory J3 v. D (32, 64, and 128 Mbit) Datasheet Product Features • ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32

js28F128j3f75

Abstract: JS28F128J3f-75 28F640J3D js28f640j3f75 js28f640J3F JS28F128J3F numonyx embedded Flash memory JS28F640J3F-75 PC28F640J3F75 RC28F640J3
Contextual Info: Numonyx Embedded Flash Memory J3 65 nm Single Bit per Cell (SBC) 32, 64, and 128 Mbit Datasheet Product Features „ „ „ „ Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block

M36L0T7060B

Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
Contextual Info: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory

e2p 25

Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7040B0 M36L0R7040T0 M69AR024B
Contextual Info: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM

PSRAM

Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM
Contextual Info: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory

J-STD-020B

Abstract: M30L0R7000B0 M30L0R7000T0 M36L0R7050B0 M36L0R7050T0 M69AR048B
Contextual Info: M36L0R7050T0 M36L0R7050B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous

J-STD-020B

Abstract: M36W0R7050B0 M36W0R7050T0 M69AR048B
Contextual Info: M36W0R7050T0 M36W0R7050B0 128 Mbit 8Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM

M36L0T7050T2

Abstract: M58LT128HB M58LT128HT M36L0t7050
Contextual Info: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM

TFBGA105

Abstract: M39P0R9070E0 M58PR512J M65KA128AL
Contextual Info: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low

Contextual Info: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O

SPANSION gl512s FLASH

Contextual Info: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet

S29GL512S10

Abstract: s29gl256s90 S29GL01GS11 S29GL128S10 S29GL128S90 S29GL128S90T S29GL-S S29GL256S S29GL01GS11DH S29GL128s10tf
Contextual Info: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet

S29GL128S

Abstract: S29GL512S S29GL01GS GL512S S29GL256S GL256S s29gl128s10tfiyyx JESD68-01 GL01GS S29GL01GS11
Contextual Info: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet

8x6mm

Abstract: M25P128 vdfpn8 VDFPN8 package ST10
Contextual Info: M25P128 128 Mbit Multilevel , Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface PRELIMINARY DATA Feature summary • 128 Mbit of Flash Memory ■ Page Program (up to 256 Bytes) in 2.5ms (typical) ■ Sector Erase (2Mbit) ■ Bulk Erase (128Mbit)

56TSOP

Abstract: LH28F128BFHE-PWTL 128M-BIT e104 TSOP*56 128-MBIT
Contextual Info: NEW PRODUCT INFORMATION LH28F128BFHE-PWTL 1-chip 128-Mbit Flash Memory Under development < Outline > LH28F128BFHE-PWTL is a 1-chip 128-Mbit boot block type page mode flash memory. High-capacity flash memory suitable for developing mobile phone systems, and enhancing high-function, multipurpose,

PL064J70

Abstract: pl064j60 SA1115 PL064J60B SA1127 PL127J70BAI00 pl127j70b PL127J70 PL032J PL127J70BA
Contextual Info: S29PL127J/S29PL129J/S29PL064J/S29PL032J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control PRELIMINARY Distinctive Characteristics „ 128/128/64/32 Mbit Page Mode devices

TSOP-20 FOOTPRINT

Abstract: AM29PDL PL032J 000000h-000FFFh pl064j70baw12 SA55
Contextual Info: S29PL127J/S29PL129J/S29PL064J/S29PL032J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control PRELIMINARY Distinctive Characteristics ARCHITECTURAL ADVANTAGES „ „ 128/128/64/32 Mbit Page Mode devices

PL064J60BFI12

Abstract: S29PL064J60BFI12 PL032J70BFI12 S29PL032J70BFI12 PL064J70BFW12 PL032J60BFI12 S29PL032J60BFI12 SA1115 S29PL127J60BFI00 pl032j
Contextual Info: S29PL127J/S29PL129J/S29PL064J/S29PL032J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control PRELIMINARY Distinctive Characteristics ARCHITECTURAL ADVANTAGES „ „ 128/128/64/32 Mbit Page Mode devices

TC58NS128ADC

Contextual Info: TC58NS128ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M x 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128A is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable

TC58NS128DC

Contextual Info: TC58NS128DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 128-MBIT 16M x 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia TM ) DESCRIPTION The TC58NS128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable