128 K DATA SHEET Search Results

Contextual Info: FM28V100 1-Mbit 128 K x 8 F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table)

Potentiometer 10k lineal

Abstract: 8951 Microcontroller 10K potentiometer linear
Contextual Info: Dual Channel, 128-/256-Position, SPI, Nonvolatile Digital Potentiometer AD5122/AD5142 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VLOGIC 10 kΩ and 100 kΩ resistance options Resistor tolerance: 8% maximum Wiper current: ±6 mA Low temperature coefficient: 35 ppm/°C

MAX 8951

Abstract: 8951 Microcontroller
Contextual Info: Single Channel, 128-/256-Position, I2C/SPI, Nonvolatile Digital Potentiometer AD5121/AD5141 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VLOGIC 10 kΩ and 100 kΩ resistance options Resistor tolerance: 8% maximum Wiper current: ±6 mA Low temperature coefficient: 35 ppm/°C

Contextual Info: OSLON SSL 80 Data Sheet Version 1.0 LCW CR7P.PC Small size high-flux LED for slim designs between 100 mA and 800 mA constant current . 128 lm, 115 lm/W (350 mA, 5000 K). Kompakte Lichtquelle für platzsparende Designs (zwischen 100 mA und 800 mA konstantem Strom). 128 lm, 115 lm/W (350 mA,

oslon ssl 150

Abstract: IESNA-LM-80 ULTRA BRIGHT WHITE LED
Contextual Info: OSLON SSL 150 Data Sheet Version 1.0 LCW CRDP.PC Small size high-flux LED for slim designs between 100 mA and 800 mA constant current . 128 lm, 115 lm/W (350 mA, 5000 K). Kompakte Lichtquelle für platzsparende Designs (zwischen 100 mA und 800 mA konstantem Strom). 128 lm, 115 lm/W (350 mA,

Contextual Info: FM28V020 256-Kbit 32 K x 8 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

sg gold plated series

Contextual Info: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS ¿iPB1506GV, ¿iPB1507GV 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS The //PB1506GV and //PB1507GV are 3.0 GHz input, high division silicon prescaler ICs for analog DBS tuner applications. These ICs divide-by-256, 128 and 64 contribute to produce analog DBS tuners with kit-use of 17 K

sg gold plated series

Abstract: UPB1507GV 433 mhz SW
Contextual Info: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS ¿iPB1506GV, ¿iPB1507GV 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS ¿iPB1506GV and ¿tPB1507GV are 3.0 GHz input, high division silicon prescaler ICs for DBS tuner applications. These ICs divide-by-256, 128 and 64 contribute to produce analog DBS tuners with kit-use of 17 K series DTS

pb1507

Abstract: PPB1 PPB1507GV-E1 PPB1507GV transistor NEC D 587 PPB1505GR PPB1506G PPB1506GV PPB1506GV-E1 PPB1507G
Contextual Info: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS PPB1506GV, PPB1507GV 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS PPB1506GV and PPB1507GV are 3.0 GHz input, high division silicon prescaler ICs for DBS tuner applications. These ICs divide-by-256, 128 and 64 contribute to produce analog DBS tuners with kit-use of 17 K series DTS

MBM29F200BA-90-X

Abstract: diode MARKING CODE A9 FPT-48P-M19 FPT-48P-M20 MBM29F200BA
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20838-1E FLASH MEMORY CMOS 2 M 256 K x 8/128 K × 16 BIT MBM29F200TA-90-X/-12-X/MBM29F200BA-90-X/-12-X • FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-3v0-E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–6E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–7E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–10E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–3E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–9E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13110-2E Memory FRAM CMOS 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming

MB85R

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13110-1E Memory FRAM CMOS 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming

Contextual Info: March 1994 PRELIMINARY DATA SHEET_ M 65608 128 K x 8 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25 * /30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW (typ) STANDBY: 1 pW (typ)

pec 808

Contextual Info: ANALOG DEVICES 14-Bit 128 kSPS Complete Sampling ADC AD779* FEATURES AC and DC Characterized and Specified K, B, T Grades 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 80 dB S/N+D (K, B, T Grades) Twos Complement Data Format (Bipolar Mode)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

MB85RS1MT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-1v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RS1MT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

F0501

Abstract: MB85R1001 MB85R1001PFTN
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-2E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile