125QC Search Results

2B253

Abstract: 1B253 3B252 3B502
Contextual Info: GOWAIMDA AXIAL LEAD CHOKES 19 Standard inductance values, other non-standard values and tolerances also available. Package - heat-shrinkable, flame retardant tubing with high resistivity Ferrite coil form. Operating temperature: -55° to +125qC. 1.250 MIN

Contextual Info: ANALOG DEVICES □ 16-Bit 500 kHz Wide Temperature Range Sampling ADC ADI 385 FUNCTIONAL BLOCK DIAGRAM FEA TURES 16-Bit R e so lu tio n 500 kHz S a m p lin g R ate D ifferential L in e a rity A u to ca lib ra tio n S p e c ifie d o ve r -55°C to +125QC R an g e

PH 33 G

Abstract: 33 g ph 334k A4033 A4056
Contextual Info: I GA40 GOWAIMDA MINIATURE HIGH CURRENT CHOKES .900 in. 22.86 mm. MAX. SERIES • 37 Standard inductance values, other non-standard values and tolerances also available. ■ Package - heat-shrinkable, flame retardant tubing with Ferrite coil form. ■ Operating temperature: -55° to +125qC.

Contextual Info: YAGEO CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS Miniature Size Aluminum Electrolytic Capacitors SQ[ High Temperature for +125qC ] 125qC Single-Ended Lead Aluminum Electrolytic Capacitors For High Frequency Applications ELECTRICAL CHARACTERISTICS Operating Temperature : -40º ~ +125ºC

PH 68 52

Abstract: PH 33 G s 170 ph ph 41 48 ph68 PH 39 PH 220 PH 33 C ph 87 ph82
Contextual Info: I I GA5 SERIES GOWAIMDA iV 37 Standard inductance values, other non-standard values and tolerances also available. Package - heat-shrinkable, flame retardant tubing with high resistivity Ferrite coil form. Operating temperature: -55° to +125qC, Color-banded for identification.

Contextual Info: 3 TCof 25ppm/cC from -1533 to +125qC, Resistance Rangefrom 1Megohmto 300 Megohms drift generated through the warm-up due to power dissipa­ tion. The series SGT are pro­ duced with E B G ’s patented Non-Inductive Design. Typical applications are Medical Sys­

tlc3741

Abstract: resistor network 104g 9 pin
Contextual Info: TLC374, TLC374Q, TLC374Y LinCMOS QUADRUPLE DIFFERENTIAL COMPARATORS SLCS118A-NOVEMBER 1983-R EVISED OCTOBER 1996 • Single- or Dual-Supply Operation D, J, N, OR PW PACKAGE TOP VIEW • Wide Range of Supply Voltages 2 V to 18 V u 10UT[ • Very Low Supply Current Drain 0.3 mA Typ

Diaphragm Pressure Gauge

Abstract: MPXAZ6115A6U MPXH6115A
Contextual Info: Pressure Freescale Semiconductor MPXA6115A Rev 5, 10/2009 High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned, Temperature Compensated and Calibrated The MPXxx6115A series sensor integrates on-chip, bipolar op amp

Contextual Info: CY7C1346H 2-Mbit 64K x 36 Pipelined Sync SRAM Functional Description[1] Features • Registered inputs and outputs for pipelined operation • 64K x 36 common I/O architecture • 3.3V core power supply • 3.3V/2.5V I/O operation • Fast clock-to-output times

221ak

Contextual Info: Tem ic DG221 S e m i c o n d u c t o r s Quad SPST CMOS Analog Switch with Latches Features Benefits • A ccepts 150-ns W rite Pulse W idth Applications C om patible w ith M ost ^iP Buses A llow s W ide Pow er Supply Tolerance W ithout A ffecting TTL C om patibility

Contextual Info: LMP7717, LMP7718 www.ti.com SNOSAY7H – MARCH 2007 – REVISED MARCH 2013 88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifier Check for Samples: LMP7717, LMP7718 FEATURES DESCRIPTION • • • • • • • The LMP7717 single and the LMP7718 (dual) low

"Power Drivers"

Abstract: vacuumfluorescent UCS5801H UCS5801
Contextual Info: APPLICATIONS INFORMATION BiMOS II POWER DRIVER TO MIL-STD-883 BiMOS monolithic smart power drivers combine CMOS logic and control functions with bipolar and/or DMOS power drivers. The CMOS inputs are compatible with standard CMOS, PMOS, and NMOS circuits.

NDT2955

Abstract: ACAA TRANSISTOR
Contextual Info: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This

550C

Abstract: HM-7680R HM-7681R PAA13
Contextual Info: 3 } HARRIS HM-7680R/81R S E M IC O N D U C T O R P R O D U C T S D IV IS IO N 1K x 8 P R O M ADIVISIONO FHARRISCORPORATION DECEMBER 1977 HM-7680R - Open Collector Outputs HM-7681R - "Three State" Outputs Preliminary Pinouts Features • 60ns M A X IM U M A D D R E S S ACCESS T IM E

MM74HC373WM

Abstract: 74HC 74LS M20D MM74HC373 MM74HC373MTC MM74HC373N MM74HC373SJ MTC20
Contextual Info: Revised May 2005 MM74HC373 3-STATE Octal D-Type Latch General Description Features The MM74HC373 high speed octal D-type latches utilize advanced silicon-gate CMOS technology. They possess the high noise immunity and low power consumption of standard CMOS integrated circuits, as well as the ability to

FGL40N120AND

Abstract: 100W UPS FGL40N120AN IH 001
Contextual Info: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor

MM74HCT540N

Abstract: MM74HCT540SJ MM74HCT540WM MM74HCT541 MM74HCT541MTC MM74HCT541SJ MM74HCT541WM MM74HCT540 MM74HCT540MTC
Contextual Info: Revised May 2005 MM74HCT540 • MM74HCT541 Inverting Octal 3-STATE Buffer • Octal 3-STATE Buffer General Description The MM74HCT540 and MM74HCT541 3-STATE buffers utilize advanced silicon-gate CMOS technology and are general purpose high speed inverting and non-inverting

VMO 440

Abstract: J-STD-020B USB1T1104 USB1T1104MHX
Contextual Info: Revised August 2005 USB1T1104 Universal Serial Bus Peripheral Transceiver with Voltage Regulator General Description The USB1T1104 is an Universal Serial Bus Specification Rev 2.0 compliant transceiver. The device provides an USB interface for Full-Speed 12Mbit/s USB applications. The

FDMA1028NZ

Contextual Info: FDMA1028NZ tm Dual N-Channel PowerTrench“ MOSFET General Description Features This device is designed specifically as a single package „ x 3.7 A, 20V. RDS ON = 68 m: @ VGS = 4.5V RDS(ON) = 86 m: @ VGS = 2.5V solution for dual switching requirements in cellular

FDS6670AS

Abstract: FDS6670A
Contextual Info: FDS6670AS 30V N-Channel PowerTrench“ SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: Revised March 2005 USB1T1104 Universal Serial Bus Peripheral Transceiver with Voltage Regulator Preliminary General Description Features The USB1T1104 is an Universal Serial Bus Specification Rev 2.0 compliant transceiver. The device provides an USB interface for Full-Speed (12Mbit/s) USB applications.

Contextual Info: Revised July 2005 USB1T1104 Universal Serial Bus Peripheral Transceiver with Voltage Regulator General Description Features The USB1T1104 is an Universal Serial Bus Specification Rev 2.0 compliant transceiver. The device provides an USB interface for Full-Speed 12Mbit/s USB applications.

Contextual Info: GA5 GOWANDA -O 37 Standard inductance values, other non-standard values and tolerances also available. MINIATURE HIGH CURRENT CHOKES .400 in 10.16 mm. MAX. SERIES Package - heat-shrinkable, flame retardant tubing with high resistivity Ferrite coil form.

LX8385-00CP

Contextual Info: UN Doc #; 8385 \\ T he i I n f i n i t e k ( i. I P o w e r i <, o f i k 1 \ 3 A Low D r o p o u t P o s i t i v e A d j u s t a b l e R e g u l a t o r t I n n o v a t i o n P D r o d u c t i o n D ESC R IP TIO N The LX8385 is a positive adjustable regula­