125 DIODE Search Results

SOD123 marking L43

Contextual Info: Surface M ount Schottky Diodes mm 150/200m W Schottky/M iniM ELF Type Number M axim um Junction Temp PRV Tjmax V °c V mA V mA pA V pF typ 30 % 100 125 125 125 0.40 0.33 0.45 10 2 10 0.65 0.45 1.00 50 15 250 0.5 0.5 5.0 25 25 75 10 10 10 125 125 125 0.40

bas125

Abstract: BAS 20 SOT23
Contextual Info: BAS 125 Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 BAS 125 BAS 125-04 BAS 125-05 1 3 BAS 125-06 3 3 3 1 2 VPS05161 1 2

800-1800V

Contextual Info: Single Phase Rectifier Bridges PSB 125 IdAVM = 125A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 125/08 PSB 125/12 PSB 125/14 PSB 125/16 PSB 125/18 Symbol Test Conditions IdAVM IFSM TC = 85°C, module

18 diode

Abstract: VRRM 800, IFSM 300
Contextual Info: Three Phase Rectifier Bridges PSD 125 IdAVM = 186 VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 125/08 PSD 125/12 PSD 125/14 PSD 125/16 PSD 125/18 Symbol Test Conditions IdAVM IFSM TC = 85°C, module

Contextual Info: VUO 125 IdAVM = 166 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 1200 1400 1600 1800 1200 1400 1600 1800 + Type ~ VUO 125-12NO7 VUO 125-14NO7 VUO 125-16NO7 VUO 125-18NO7* Test Conditions IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0

Contextual Info: VUO 125 IdAVM = 166 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 1200 1400 1600 1800 1200 1400 1600 1800 + Type ~ VUO 125-12NO7 VUO 125-14NO7 VUO 125-16NO7 VUO 125-18NO7* Test Conditions IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0

Contextual Info: Three Phase Rectifier Bridges VRSM VRRM V V 1200 1400 1600 1800 1200 1400 1600 1800 VUO 125 IdAVM = 186 A VRRM = 1200-1800 V - Type ~~ ~ + ~ Test Conditions IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0 + VUO 125-12NO7 VUO 125-14NO7 VUO 125-16NO7 VUO 125-18NO7*

AN-300

Contextual Info: LXA12T600C www.Qspeed.com 600V, 12A X-Series Common-Cathode Rectifier Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 6 600 71 3.1 0.7 General Description Utilizing proprietary Qspeed technology this

ss125 transistor

Abstract: ss125
Contextual Info: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode •^GS th = 1-5 -2 .5 V Type b 0.1 A BSS 125 ^DS 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 ffDS(on) Package Marking 45 Q TO-92

LQA20B300

Abstract: VR200 lqa20b300c AN-300
Contextual Info: LQA20T300C, LQA20B300C www.Qspeed.com 300V, 20A Q-Series Common-Cathode Rectifier Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 300 38 2.3 0.7 General Description Utilizing proprietary Qspeed technology this

BSP 125

Abstract: Q62702-S654 E6327 Q67000-S284 Bsp 540
Contextual Info: BSP 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 125 600 V 0.12 A 45 Ω SOT-223 BSP 125 Type BSP 125 BSP 125 Ordering Code Q62702-S654

SS125

Abstract: ss125 transistor ss125 datasheet BSS125 Q67000-S233 S233 marking Q62702-S021 Q67000-S008 marking "BSs"
Contextual Info: BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 125 600 V 0.1 A 45 Ω TO-92 SS125 Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021

LQA12T300C

Contextual Info: LQA12T300C, LQA12B300C Qspeed Family 300 V, 12 A Q-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 6 300 27 1.87 0.7 General Description A V nC A Pin Assignment

voltage stabilizer winding data

Contextual Info: 14-Bit, 125 MSPS/105 MSPS/80 MSPS, 1.8 V Analog-to-Digital Converter AD9255 Preliminary Technical Data FEATURES APPLICATIONS SNR = 78.3 dBFS @ 70 MHz and 125 MSPS SFDR = 93 dBc @ 70 MHz and 125 MSPS Low power: 371 mW @ 125 MSPS 1.8 V analog supply operation

Contextual Info: LXA10T600, LXA10FP600 Qspeed Family 600 V, 10 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 600 94 3.85 0.5 General Description A V nC A This device has the lowest QRR of any 600V

darlington opto coupler

Abstract: opto 4N33 FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD865 FCD865D
Contextual Info: FAIRCHILD OPTOELECTRONICS OPTO COUPLERS—DARLINGTON OUTPUT MAX RATINGS @ TA = 25°C Transistor Item DEVICE NO. Diode PD mW mA ic v CEO V Vr V mA if v ISO kV 1 FCD850 250 125 30 3.0 80 1.5ac 2 FCD850C 250 125 30 3.0 80 5.0 3 FCD850D 250 125 30 3.0 80 6.0 4

LXA06T600

Abstract: AN-300 s 498
Contextual Info: LXA06T600, LXA06B600 Qspeed Family 600 V, 6 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 6 600 71 3.1 0.7 General Description A V nC A This device has the lowest QRR of any 600V

AN-300

Contextual Info: LQA06T300 Qspeed Family 300 V, 6 A Q-Series Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 6 300 27 1.87 0.7 General Description This device has the lowest QRR of any 300 V Silicon diode. Its recovery characteristics

Contextual Info: Schottky Barrier Diodes Surface Mount Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） 0.5 4 0.58 0.5 0.1 1.0 30 1.0 1.0 2.0 100 0.1 0.001 125 Ta = 125℃ 100℃ 60℃ 26℃ 0.01 0.2 0.2 100 Ta = 125℃ 100℃

TOPSWITCH 242

Abstract: D803
Contextual Info: LXA04T600, LXA04B600 Qspeed Family 600 V, 4 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 General Description A V nC A This device has the lowest QRR of any 600V

AD9600-105

Contextual Info: 10-Bit, 105/125/150 MSPS, 1.8V Dual Analogto-Digital Converter Preliminary Technical Data AD9600 FEATURES SNR = 60.7 dBc 61.7 dBFS to 70 MHz @ 125 MSPS SFDR = 81.5 dBc to 70 MHz @ 125 MSPS Low power: 854 mW @ 125 MSPS SNR = 60.5 dBc (61.5 dBFS) to 70 MHz @ 150 MSPS

AN-300

Abstract: EMI filter 500a LXA03T600 LXA03B600
Contextual Info: LXA03T600, LXA03B600 Qspeed Family 600 V, 3 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 3 600 43 2.3 0.9 General Description A V nC A This device has the lowest QRR of any 600V

lxa04t600

Abstract: DIODE 200A 600V schottky AN-300 SCHOTTKY 4A 600V TOPSWITCH 242 lxa04
Contextual Info: LXA04T600, LXA04B600 QSpeed Family 600 V, 4 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 A V nC A General Description This device has the lowest QRR of any 600V

LQA30T300

Contextual Info: LQA30T300 Qspeed Family 300 V, 30 A Q-Series Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 30 300 53 2.85 0.6 General Description A V nC A This device has the lowest QRR of any 300V Silicon diode.