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    123N10N Search Results

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    123N10N Price and Stock

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    Infineon Technologies AG IPB123N10N3GATMA1

    MOSFET N-CH 100V 58A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPB123N10N3GATMA1 Cut Tape 2,101 1
    • 1 $2.15
    • 10 $1.38
    • 100 $0.94
    • 1000 $0.75
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    IPB123N10N3GATMA1 Digi-Reel 2,101
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    IPB123N10N3GATMA1 Reel 2,000 1,000
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    • 1000 $0.69
    • 10000 $0.61
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    Avnet Americas IPB123N10N3GATMA1 Reel 1,000
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    Newark () IPB123N10N3GATMA1 Reel 1,000
    • 1 $1.09
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    IPB123N10N3GATMA1 Cut Tape 1
    • 1 $1.92
    • 10 $1.32
    • 100 $1.19
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    Rochester Electronics IPB123N10N3GATMA1 750 1
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    • 100 $0.82
    • 1000 $0.68
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    TME IPB123N10N3GATMA1 1
    • 1 $1.86
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    Ameya Holding Limited IPB123N10N3GATMA1 113
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    Rutronik IPB123N10N3GATMA1 Reel 3,000 1,000
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    • 1000 $0.79
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    Chip One Stop IPB123N10N3GATMA1 Cut Tape 1,360 0 Weeks, 1 Days 1
    • 1 $1.86
    • 10 $1.24
    • 100 $0.83
    • 1000 $0.68
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    IBS Electronics IPB123N10N3GATMA1 1,000
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    • 1000 $1.18
    • 10000 $1.13
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    Glenair Inc M85049/123N10N

    High Production - Strain Relief/Clamps |Glenair M85049/123N10N
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    Newark M85049/123N10N Bulk 1
    • 1 $316.64
    • 10 $183.74
    • 100 $183.74
    • 1000 $183.74
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    Interstate Connecting Components M85049/123N10N
    • 1 $333.95
    • 10 $189.05
    • 100 $189.05
    • 1000 $189.05
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    Powell Electronics M85049/123N10N 19 1
    • 1 $353.39
    • 10 $205.06
    • 100 $205.06
    • 1000 $205.06
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    123N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking F59 DIODE

    Abstract: 123N10N IEC61249-2-21 JESD22
    Contextual Info: 123N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.3 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB123N10N3 IEC61249-2-21 PG-TO263-3 123N10N marking F59 DIODE 123N10N IEC61249-2-21 JESD22 PDF

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Contextual Info: IPP126N10N3 G 123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3 PDF

    126N10N

    Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
    Contextual Info: IPP126N10N3 G 123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 PG-TO220-3 PG-TO263-3 PG-TO262-3 126N10N 123N10N D46 diode 126n10 IPP126N10N3 G JESD22 PG-TO220-3 PDF