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    123N08 Search Results

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    Infineon Technologies AG BSC123N08NS3GATMA1

    MOSFET N-CH 80V 11A/55A TDSON
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    DigiKey () BSC123N08NS3GATMA1 Tape & Reel 28,286 5,000
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    BSC123N08NS3GATMA1 Cut Tape 28,282 1
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    Avnet Americas () BSC123N08NS3GATMA1 Tape & Reel 5,000 52 Weeks 5,000
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    BSC123N08NS3GATMA1 Bulk 1
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    Mouser Electronics BSC123N08NS3GATMA1 303
    • 1 $1.92
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    Newark BSC123N08NS3GATMA1 Bulk 11,447 1
    • 1 $1.87
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    Bristol Electronics BSC123N08NS3GATMA1 3,533
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    Rochester Electronics BSC123N08NS3GATMA1 69,310 1
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    TME BSC123N08NS3GATMA1 4,966 1
    • 1 $1.55
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    Ameya Holding Limited BSC123N08NS3GATMA1 5,102
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    ComSIT USA BSC123N08NS3GATMA1 100
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    EBV Elektronik BSC123N08NS3GATMA1 5,000 53 Weeks 5,000
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    Win Source Electronics BSC123N08NS3GATMA1 76,080
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    JRH ELECTRONICS A850492123N08A

    CONN BACKSHELL W/CLMP SZ23 H
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    DigiKey A850492123N08A Bag 64 25
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    Amphenol PCD A850492123N08A

    CONN BACKSHELL W/CLMP SZ23 H
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    DigiKey A850492123N08A Bag 21 1
    • 1 $59.06
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    • 100 $42.67
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    Amphenol PCD A850492123N08

    BACKSHELL;NON ENV;ENP
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    DigiKey A850492123N08 Bulk 25
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    Amphenol PCD A850492123N08B

    BACKSHELL;NON ENV;ENP
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    DigiKey A850492123N08B Bulk 25
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    123N08 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    123n08

    Contextual Info: Type 123N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Package V DS • Optimized technology for DC/DC converters 80 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) 12.3 ID 40 V mΩ A • Superior thermal resistance • N-channel, normal level


    Original
    BSZ123N08NS3 123N08NS 123n08 PDF

    123N08N

    Abstract: JESD22 DSV80 BSZ123N08NS3
    Contextual Info: Type 123N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Package V DS • Optimized technology for DC/DC converters 80 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) 12.3 ID 40 V mΩ A • Superior thermal resistance • N-channel, normal level


    Original
    BSZ123N08NS3 123N08N 123N08N JESD22 DSV80 PDF

    123N08NS

    Abstract: BSC123N08NS3 JESD22 123N08N BSC123N08N
    Contextual Info: 123N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching and sync. rec. 80 R DS(on),max • Optimized technology for DC/DC converters 12.3 ID 55 V mΩ A • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC123N08NS3 123N08NS 123N08NS JESD22 123N08N BSC123N08N PDF

    123N08NS

    Abstract: BSC123N08NS3 G BSC123N08NS3 IEC61249-2-21 JESD22 F33A 123n08
    Contextual Info: 123N08NS3 G OptiMOS 3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching and sync. rec. 80 R DS on ,max • Optimized technology for DC/DC converters 12.3 ID 55 V mΩ A • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC123N08NS3 IEC61249-2-21 123N08NS 123N08NS BSC123N08NS3 G IEC61249-2-21 JESD22 F33A 123n08 PDF

    Contextual Info: Type 123N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Package V DS • Optimized technology for DC/DC converters 80 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) 12.3 ID 40 V mΩ A • Superior thermal resistance • N-channel, normal level


    Original
    BSZ123N08NS3 123N08N 11ntain PDF

    BSC123N08NS3

    Abstract: 123N08NS
    Contextual Info: 123N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching and sync. rec. 80 R DS(on),max • Optimized technology for DC/DC converters 12.3 ID 55 V mΩ A • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC123N08NS3 123N08NS 123N08NS PDF

    BSZ123N08NS3

    Abstract: 123N08N JESD22 123n08
    Contextual Info: Type 123N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Package V DS • Optimized technology for DC/DC converters 80 R DS(on),max • Excellent gate charge x R DS(on) product (FOM) 12.3 ID 40 V mΩ A • Superior thermal resistance • N-channel, normal level


    Original
    BSZ123N08NS3 123N08N 123N08N JESD22 123n08 PDF

    123N08N

    Abstract: IEC61249-2-21 JESD22 BSZ123N08NS3
    Contextual Info: Type 123N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Package V DS • Optimized technology for DC/DC converters R DS on ,max • Excellent gate charge x R DS(on) product (FOM) ID 80 12.3 40 V mΩ A • Superior thermal resistance • N-channel, normal level


    Original
    BSZ123N08NS3 IEC61249-2-21 123N08N 123N08N IEC61249-2-21 JESD22 PDF