123A DIODE Search Results

HC123A

Abstract: 152 diode M74HC123 HC123 M54HCXXXF1R M74HCXXXM1R 74ls123 time delay 123a diode
Contextual Info: M54HC123/123A M74HC123/123A DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR . . . . . . . . . HIGH SPEED tPD = 25 ns TYP at VCC = 5V LOW POWER DISSIPATION STANDBY STATE ICC=4 µA (MAX.) AT TA=25°C ACTIVE STATE ICC = 200 µA (TYP.) AT VCC=5V HIGH NOISE IMMUNITY

HC123A

Abstract: HC123 M54HCXXXF1R M74HCXXXM1R
Contextual Info: M54HC123/123A M74HC123/123A DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR . . . . . . . . . HIGH SPEED tPD = 25 ns TYP at VCC = 5V LOW POWER DISSIPATION STANDBY STATE ICC=4 µA (MAX.) AT TA=25°C ACTIVE STATE ICC = 200 µA (TYP.) AT VCC=5V HIGH NOISE IMMUNITY

74HC12

Abstract: HC 123A diode V54 74hc123
Contextual Info: fZ 7 m 7# M54H C 123/123A M 74H C 123/123A S G S -T H O M S O N R iilD O œ iL IlO T O iD O i DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tp D = 25 ns TYP at Vcc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lcc=4 |iA (MAX.) AT T a=25‘ C

SOD-123

Abstract: XBS104S14
Contextual Info: XBS104S14 ETR1609-002 Schottky Barrier Diode, 1A, 40V, SOD-123A Package •APPLICATIONS ■FEATURES Forward Voltage : VF=0.49V TYP. ●Rectification Forward Current : IF(AV)=1A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

Contextual Info: XBS104S14 ETR1609-002 Schottky Barrier Diode, 1A, 40V, SOD-123A Package •APPLICATIONS ■FEATURES Forward Voltage : VF=0.49V TYP. ●Rectification Forward Current : IF(AV)=1A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

Contextual Info: XBS104S14R-G ETR1609-003 Schottky Barrier Diode, 1A, 40V, SOD-123A Package APPLICATIONS FEATURES Forward Voltage : VF=0.49V TYP. Rectification Forward Current : IF(AV)=1A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V

XBS104S14R-G

Abstract: XBS104S14R Schottky Barrier Diode XBS104S14 123a diode
Contextual Info: XBS104S14R-G ETR1609-003 Schottky Barrier Diode, 1A, 40V, SOD-123A Package •APPLICATIONS ■FEATURES Forward Voltage : VF=0.49V TYP. ●Rectification Forward Current : IF(AV)=1A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

VHC 123A

Abstract: VHC123A
Contextual Info: 123A National Semiconductor 74VHC123A Dual Retriggerable Monostable Multivibrator General Description The 'VHC123A is an advanced high speed CMOS Monosta­ ble Multivibrator fabricated with silicon gate CMOS technol­ ogy. It achieves the high speed operation similar to equiva­

Contextual Info: TOSHIBA TC74VHC123,221 AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC123AF, TC74VHC123AFN, TC74VHC123AFT TC74VHC221AF, TC74VHC221AFN, TC74VHC221AFT DUAL MONOSTABLE MULTIVIBRATOR TC 74V H C 123A F/A FN / AFT RETRIGGERBLE TC74VHC221 A F / A F N / A F T NON - RETRIGGERBLE

PC925 sharp

Abstract: pc925 AN 7580 circuit diagram ED-95 95123 pc925I
Contextual Info: PREPARED BY: y, y& Jm /.,yf& DATE : APPROVED BY: . / .* SPEC. DATE: Jm 12,1*6 SHARP No. ED-95 123A ISSUE June 11, 1996 PAGE 12 Pages ELECTRONIC COMPONENTS GROUP SHARP CORPORATION REPRESENTATIVE DMSION SPECIFICATION OPTO-ELECTROMC DEVICES DfV. F DEVICE SPECIFICATION FOR

Contextual Info: - TC74VHC123AF/AFN/AFS TC74VHC221AF/AFN/AFS DUAL MONOSTABLE MULTIVIBRATOR TC74VHC123AF / AFN / AFS RETRIGGERBLE TC74VHC221AF / AFN / AFS NON - RETRIGGERBLE The T C 74V H C 123A / 221A M O N O STA BLE a re h ig h sp eed M U LTIV IBR A TO R fabricated

B716D

Contextual Info: RELIABILITY REPORT DATE: 4/7/04 QUALITY ENG : DANA TRINH PART NUMBER PURPOSE: Qualify HL BASE ARRAY PACKAGE TYPE : ASSEMBLY LOCATION D/C # LOT # FAB # ARRAY PROCESS SY88813 10L MSOP UNISEM 234M B716DMEB MICREL HL ASSET 1 SY88922 10L MSOP UNISEM 123A B323C

Contextual Info: TOSHIBA TC74HC123AP/AF/AEN Dual Retriggerable Monostable Multivibrator The T C 74H C 123A is a high speed CM O S MONOSTABLE MULTIVIBRATOR fabricated w ith silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

123AP

Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Contextual Info: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge

74HC

Abstract: M16A M16D MM74HC123A MM74HC123AM MM74HC123AMTC MM74HC123ASJ MTC16
Contextual Info: Revised February 1999 E M IC O N D U C T G R T M General Description T he M M 74H C 123A high speed m onostable m ultivibrators one shots utilize advanced silicon-gate C M O S te ch n ol­ ogy. T h e y feature speeds com parable to low pow er Schottky TTL circuitry w hile retaining the low pow er and high

HC123A

Contextual Info: / = 7 Ä 7# S C S -T H O M S O N « M im g ïïM M S M 54H C 123/123A M 7 4 H C 123/ 12 3 A DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tPD = 25 ns TYP at Vcc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lCc=4 nA (MAX.) AT Ta=25'C ACTIVE STATE Icc = 200 nA (TYP.) AT Vcc=5V

74HC123AN

Abstract: 74HC123AM 74HC123A
Contextual Info: A I R C H S eptem ber 1983 I L D Revised February 1999 S E M IC O N D U C T O R TM General Description p u t p u ls e e q u a tio n is s im p ly : P W = R e x t ( ^ e x t ) ! w h e re The M M 74H C 123A high speed m onostable m ultivibrators (one shots) utilize advanced silicon-gate C M OS te ch n ol­

m-38510/123

Abstract: M-38510/123A marking 0z MRC 100-6
Contextual Info: MIL-M-38510/123A 21 September 1982 SUPERSEDI NG-MIL -M-38510/123 21 J u l y 1980 MILITARY SPECIFICATION M I C R O C I RC U I TS , LINEAR, NEGATIVE LOGI C, CMOS ANALOG SWITCH, MONOLITHIC S I L I CO N T h i s s p e c i f i c a t i o n i s a p p r o v e d f o r use by a l l D e p a r t ­

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

123AP

Contextual Info: designed for . . . Siliconix G123 H M onolithic 4-Channel Enhancement-Type MOS FET Switch BENEFITS • Switching Analog Signals Reduces External C om ponent Requirements Internal Zener Diode Protects the Gate Four Switches Per Chip ■ M ultiplexing Intergrated MOS FET fo r Each Gate to

10c102

Abstract: HC 123A
Contextual Info: A S E M I R C I C C D N H I L D JDu ly 1 9 f Ä ,M Revised April 1999 D U C T D R I 'M General Description Features • High Speed: t PD = 8.1 ns typ at TA = 25°C ■ Low Power Dissipation: lc c = 4 jiA (Max) at T A = 25°C ■ A ctive State: lc c = 600 (iA (Max) at T A = 25°C

74hc123a

Abstract: VHC123 VHC123A 74hc123a fairchild RX-3 74VHC123A 74VHC123AM 74VHC123AMTC 74VHC123ASJ M16A
Contextual Info: p ly1 9 !3 Ä,i c o o Revised April 1999 E M IC O N D U C T G R T M General Description An input protection circuit ensures that 0 to 7V can be applied to the input pins without regard to the supply volt­ age. This device can be used to interface 5V to 3V systems

diode SR60

Abstract: BR2032 h2a CR123A -40 596589 SR60 diode RS Component 596-618 diode sr45 Rechargeable BATTERY AA 1.5V cr2032 charge recharge CR123A
Contextual Info: Issued November 1994 K18786 Non-rechargeablebatteries Introduction A comprehensive range of non-rechargeable batteries alkaline, zinc chloride, lithium, silver and mercury primary cells . Each chemical couple used is suited to a particular application, the following tables detail the

SG323K

Abstract: SG223K center tapped transformer LM1235 SG-123 SG323 SG123K SG123AISG223AISG323A SG123 SG223
Contextual Info: Silicon Generai. U M A R SG123AI SG223AI SG323A SG123 / SG223 / SG323 I N T K , R A T I O I R< I l l s 1 5 VOLT— 3-AMP POSITIVE REGULATOR DESCRIPTION FEATURES The SG123A fa m ily is an im proved version of th e p o p u la r LM 1235 Volt, 3 A m p R e g u la tor line.