122M Search Results

mr4000

Abstract: C-400 202MR 122MR E93779 LR89403
Contextual Info: CURRENT TRANSFORMER Model 786 APPLICATION: CONTINUOUS THERMAL CURRENT RATING FACTOR: FREQUENCY: INSULATION LEVEL: E93779 600:5 MR MODEL 786 - 601MR - rating C200 LR89403 TYPICAL EXCITATION CURVES - MODEL 786 1200:5 MR MODEL 786 - 122MR - rating C400 3000:5 MR

Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 12/1/11 6:47 PM Page 91 Example: SPD73R-122M 1.2 H 1R2 Example: SPD74R-105M (1,000 H) 102 Packaging Tape & reel (16mm): 13" reel, 1000 pieces max.; 7" reel not available s or ct du In Marking For values lower than 10 H the R indicates a

Contextual Info: ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

Contextual Info: Surface Mount Shielded Power Choke SERIES SPD42R A C B G D F Physical Parameters Inches A 0.185 ± 0.012 B 0.185 ± 0.012 C 0.115 max. D 0.015 Ref. E 0.100 Ref. F 0.065 Ref. G 0.270 Ref. H 0.075 Ref. I 0.210 Ref. J 0.059 Ref. -122M -222M -332M -472M -682M

393m

Contextual Info: A C B G D D F Physical Parameters Inches A 0.185 ± 0.012 B 0.185 ± 0.012 C 0.115 max. D 0.015 Ref. E 0.100 Ref. F 0.065 Ref. G 0.270 Ref. H 0.075 Ref. I 0.210 Ref. J 0.059 Ref. -122M -222M -332M -472M -682M -103M -123M -153M -183M -223M -273M -333M -393M

AFE5805

Abstract: AFE5805ZCF 12v single supply 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: AFE5805 www.ti.com SBOS421D – MARCH 2008 – REVISED MARCH 2010 FULLY-INTEGRATED, 8-CHANNEL ANALOG FRONT-END FOR ULTRASOUND 0.85nV/√Hz, 12-Bit, 50MSPS, 122mW/Channel Check for Samples: AFE5805 FEATURES DESCRIPTION • The AFE5805 is a complete analog front-end device

21071AA

Abstract: 21A04-B0 21a04 Alpha 21064-BB 21164-P6
Contextual Info: Alpha 64-bit Microprocessor Fact Sheet: Alpha 21164 Microprocessor NEW NEW 300MHz 8.7 8.7 20-100MHz 366MHz 11.3 14.5 25-122MHz 433MHz 13.3 18.3 29-144MHz 500MHz 15.4 21.1 33166MHz Off Chip Cache Manuf. Process 8KB 8KB 96K 1 MB 0.35 micron 8KB 8KB 96K 1 MB

Contextual Info: Product Brief CAT-122M-40 CAT-DACIQ12B80M-40 12-Bit, 122Msps, I/Q DAC IP Core in 40nm General Description The CAT-122M-40 is a complete state-of-theart dual digital-to-analog converter DAC specifically designed for analog front-end (AFE) that is ideally

marking code 27A

Abstract: marking 27A sot23 marking code 27a sot sot-23 Marking 27A E DMP3160L DMP3160L-7 J-STD-020D transistor SOT-23 marking ps3 sot-23 Marking 27A marking 27A sot-23
Contextual Info: DMP3160L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRO D UCT • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 122mΩ @ VGS = -10V, ID = -2.7A

Contextual Info: Example: SPD73R-122M 1.2 H 1R2 Example: SPD74R-105M (1,000 μH) 102 Packaging Tape & reel (16mm): 13" reel, 1000 pieces max.; 7" reel not available s or ct du In Marking For values lower than 10 μH the R indicates a decimal point and the remaining digits indicate the

0FHM0002

Abstract: 0FHM0001 fuse 25A
Contextual Info: Fuse Holders Blade Fuseholders - In-Line Splash-Waterproof Fuseholder for MINI Style Blade Fuse Used with MINI / FK1 Fuse 1 to 20A or 25A and 30A. Supplied with two 4.78” / 122mm wire leads. Includes protective cover for harsh environment. Fuse Holders

Contextual Info: DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 122mΩ @ VGS = -10V -2.7A  Low Input Capacitance 190mΩ @ VGS = -4.5V -2.0A  Fast Switching Speed V(BR)DSS -30V Features

Contextual Info: DMN10H120SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = +25°C • • 110mΩ @ VGS = 10V 3.8 A • 122mΩ @ VGS = 6.0V 3.6 A • • • V(BR)DSS 100V Features and Benefits Low RDS(ON) – ensures on state losses are minimized

Contextual Info: FDMS2734 N-Channel UltraFET Trench MOSFET 250V, 14A, 122m: Features General Description „ Max rDS on = 122m: at VGS = 10V, ID = 2.8A „ Low Miller Charge UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

AFE5805

Abstract: AFE5805ZCF 4MHz ultrasound transducer circuit
Contextual Info: AFE5805 www.ti.com SBOS421D – MARCH 2008 – REVISED MARCH 2010 FULLY-INTEGRATED, 8-CHANNEL ANALOG FRONT-END FOR ULTRASOUND 0.85nV/√Hz, 12-Bit, 50MSPS, 122mW/Channel Check for Samples: AFE5805 FEATURES DESCRIPTION • The AFE5805 is a complete analog front-end device

Contextual Info: J IVIN6755240 / 320 MN6755240 / 320 1 Type 1 ROM x8-bit 2 4 K /3 2 K 1 RAM (x8-bit) 7 0 4 / 1024 1 Minimum Instruction Execution Time 0,33|JS (at 3 .3 to 5 .5 V , 1 2M H z) w ith M ain c lo c k operated 0.25ms (at 4 .2 to 5 .5 V , 1 6M H z) 122ms (at 3 .3 to 5 .5 V , 3 2 .7 6 8 k H z)

Contextual Info: Product specification DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 122m @ VGS = -10V -2.7A  Low Input Capacitance 190m @ VGS = -4.5V -2.0A  Fast Switching Speed

marking code YW DIODE

Contextual Info: DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance: RDS ON < 122mΩ @ VGS = -10V, ID = -2.7A RDS(ON) < 190mΩ @ VGS = -4.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance

FDMS2734

Contextual Info: FDMS2734 N-Channel UltraFET Trench MOSFET 250V, 14A, 122mΩ Features tm General Description „ Max rDS on = 122mΩ at VGS = 10V, ID = 2.8A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,

Contextual Info: A - B RI G H T Part No. Ø65.122mm A-BRIGHT INDUSTRIAL CO., LTD. AB-781W0-01WA-E40 LED BULB Diff No. Type：BULB „ Product Photo: 122.0±1.0 26.0 65.6±0.5 „ Features: ● ● ● ● ● ● ● ● LED power : 8 W. Dimension : Ø65.6 x 122mm. Emitted color : White.

DMN10H170SFG

Contextual Info: DMN10H170SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary ID max TA = +25°C •  122mΩ @ VGS = 10V 2.9A Low RDS ON – ensures on state losses are minimized  Small form factor thermally efficient package enables higher 133mΩ @ VGS = 4.5V

DMP3160L

Abstract: DMP3160L-7
Contextual Info: DMP3160L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • Low On-Resistance: RDS ON < 122mΩ @ VGS = -10V, ID = -2.7A RDS(ON) < 190mΩ @ VGS = -4.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: Document 333-1 SMT Power Inductors – LPO6610 • Very low profile - only 1.0 mm high! • Handles current up to 1.7 Amps rms 2 L DCR SRF ±20% max typ Isat3 Irms4 1 Part number µH (Ohms) (MHz) (A) (A) LPO6610-122ML_ 1.2 0.08 190 2.1 1.7

Contextual Info: DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 122m @ VGS = -10V -2.7A  Low Input Capacitance 190m @ VGS = -4.5V -2.0A  Fast Switching Speed V(BR)DSS -30V Features