1210 MEMORY 12 Search Results
1210 MEMORY 12 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54S189J/C |
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54S189 - 64-Bit Random Access Memory |
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| 27S191DM/B |
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AM27S191 - 2048x8 Bipolar PROM |
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| 27S19ADM/B |
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AM27S19 - 256-Bit Bipolar PROM |
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| 27S07ADM/B |
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27S07A - Standard SRAM, 16X4 |
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| 54LS224AJ/B |
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54LS224 - 64-Bit FIFO Memories |
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1210 MEMORY 12 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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1206 footprint dimensionContextual Info: Low Profile Ceramic Chip Capacitors NMC-E Series CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) • Z5U AND Y5V DIELECTRIC DECOUPLING CAPACITORS FOR SURFACE MOUNT MEMORY AND LOGIC CIRCUITS • LOW PROFILE IN STANDARD 0805, 1206 AND 1210 FOOTPRINT |
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MS-1210 ICContextual Info: A A CALIFORNIA MICRO DEVICES CORP. 2000 WEST 14TH STREET TEMPE, ARIZO NA 85281 CM D C M 1210 M ic r o c ir c u CMOS Nonvolatile Controller Circuit Operation Features Makes volatile nonvolatile |
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CM1210 GNDC18 MS-1210 IC | |
A18T
Abstract: 1X16
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TC58FVT800/B800F/FT-85 TC58FVT800/B800 44-pin 48-pin OP44-P-600-1 A18T 1X16 | |
A18T
Abstract: 1X16
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TC58FVT800/B800F/FT-85 TC58FVT800/B800 44-pin 48-pin OP44-P-600-1 A18T 1X16 | |
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Contextual Info: A B C D E REVISION HISTORY ECO REV _ RTR1 RTR3 OPT SVIN RSS1 VIN 3 4 5 6 TRACK EXT SS INT 4.7M U1 LTC3618EUF PGOOD1 VIN 2.25V - 5.5V 100k E5 E6 CIN6 100uF GND 18 VIN + CIN5 100uF OPT CIN4 22uF 6.3V 1206 + CIN3 22uF 6.3V 1206 CIN2 22uF 6.3V 1206 21 22 CIN1 |
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LTC3618EUF 100uF 470pF | |
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Contextual Info: TOSHIBA TC58FVT800/B800F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only ele ctrically erasable and program m able |
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TC58FVT800/B800F/FT-85 TC58FVT800/B800 44-pin TC58FVT800/B800F/FT-85f 48--P C58FVT800/B800F/FT-85 | |
kemet c.93Contextual Info: General Purpose, High Stability and AC Line EMI Suppression LDB Series Unencapsulated Winding, Size 1206 – 1812, 16 & 50 VDC Overview Applications Polyphenylene sulphide PPS film capacitor for surface mounting. Typical applications include timing, filtering and use as a memory |
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Contextual Info: General Purpose, High Stability and AC Line EMI Suppression LDB Series Unencapsulated Winding, Size 1206 – 1812, 16 & 50 VDC Overview Applications Polyphenylene sulphide PPS film capacitor for surface mounting. Typical applications include timing, filtering and use as a memory |
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7500FE
Abstract: ARM7500FE ARM FPA 1838 infrared FPA11 arm processor 300D B-01 str 1229 0077B
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7500FE 0077B ARM7500FE 32-bit 16-bit 7500FE ARM FPA 1838 infrared FPA11 arm processor 300D B-01 str 1229 0077B | |
Ras 1210
Abstract: 2332 prom mar 552 Marking code 016f CS25E marking code 576 p 0118 da a 214 renesas tioca hd64f2339 H0050
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REJ09B0245-0400 H8S/2339 16-Bit Family/H8S/2300 H8S/2339 H8S/2338 H8S/2337 H8S/2332 HD64F2339 HD64F2339E Ras 1210 2332 prom mar 552 Marking code 016f CS25E marking code 576 p 0118 da a 214 renesas tioca hd64f2339 H0050 | |
sensor book
Abstract: 6a20e Nippon capacitors
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H8S/2339 REJ09B0245-0400 sensor book 6a20e Nippon capacitors | |
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Contextual Info: DS1210 DALLAS SEMICONDUCTOR DS 1210 Nonvolatile Controller Chip PIN ASSIGNMENT FEATURES • Converts CM OS RAMs into nonvolatile memories v cco £ • Unconditionally write protects when V c c is out of tolerance 7 VBAT2 TOL £ 3 6 ] CEO GND [[ 4 5 J CË VBAT1 |
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DS1210 DS1210 1413G | |
8X13
Abstract: T15V256B
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T15V256B 12/15ns T15V256B 28-pin 8X13 | |
Architecture of TMS320C67X
Abstract: PCI1221 catalyst research corp battery PCI1210 java card 1997 TMS320 TMS626812B TNETE2008 TNETE2101 TNETX3270
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A18TContextual Info: TC58FVT800/B800F/FT-85,-10,-12 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only electrically erasable and programmable |
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TC58FVT800/B800F/FT-85 TC58FVT800/B800 44-pin A18T | |
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Contextual Info: TOSHIBA TC58FVT800/B800F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only electrically erasable and programmable |
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TC58FVT800/B800F/FT-85 TC58FVT800/B800 44-pme-out | |
Johanson Dielectrics
Abstract: s41 050 S41-1210
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RS481. Johanson Dielectrics s41 050 S41-1210 | |
1812 Signal Filtering 60 IMPEDANCEContextual Info: X2Y Filter & Decoupling Capacitors The X2Y® Design - A Capacitive Circuit ® X2Y components share many common features with standard multi-layer ceramic capacitors MLCC for easy adoption by end-users. • Same component sizes (0603, 0805, 1206, etc.) |
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X2Y0804 1812 Signal Filtering 60 IMPEDANCE | |
ice 8040
Abstract: processor 8040 12 pin ic 3 phase inverter ic PWM 6 pin JTAG header inverter ups pcb service manual digital clock using logic gates EPD controller hall effect 4 pin out JTAG(MINI)14 pin
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ADSP-21065L ice 8040 processor 8040 12 pin ic 3 phase inverter ic PWM 6 pin JTAG header inverter ups pcb service manual digital clock using logic gates EPD controller hall effect 4 pin out JTAG(MINI)14 pin | |
VOICE REC playback
Abstract: microphone electret pre amp chipcorder ISD ChipCorder Application Information Record/PLAYBACK ISD1200 ISD1212 ISD120 ISD1200-SERIES
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ISD1200 12-Second ISD120 600-inch 300-inch ISD1200BP1-699 VOICE REC playback microphone electret pre amp chipcorder ISD ChipCorder Application Information Record/PLAYBACK ISD1212 ISD1200-SERIES | |
MXD1210CPAContextual Info: >kiyjxi>ki 19-0154 Rev 0; 7/93 N onvolatile RAM C ontroller _ A pplications HP Systems Features ♦ Battery Backup ♦ Memory Write Protection ♦ 230p.A Operating-Mode Quiescent Current ♦ 2nA Backup-Mode Quiescent Current ♦ Battery Freshness Seal |
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MXD1210 MXD1210 032mm) MXD1210CPA | |
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Contextual Info: I x ^ tl Circuit Com ponents Inc. Surface Mount Capacitors K Product Description SMT chip capacitors from Circuit Components Inc. have a maximum thickness of 0.020" and are specifically designed to be surface mounted in low profile applications. They are designed to |
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1206 footprint dimension
Abstract: 1210 footprint Z5U diode 0805 Y5V 104
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-30oC 1206 footprint dimension 1210 footprint Z5U diode 0805 Y5V 104 | |
1206 footprint dimension
Abstract: footprint plcc 32 0805 size footprint
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-30oC 1206 footprint dimension footprint plcc 32 0805 size footprint | |