120N20 Search Results

120N20 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HSX120N20		Huashuo Semiconductor	HSX120N20 N-channel 200V MOSFET with 8.9 mΩ RDS(ON), 120 A continuous drain current, TO-247 package, suitable for high-efficiency power switching applications.	Original	PDF
HSH120N20		Huashuo Semiconductor	200V N-channel trench MOSFET with 8.9 mΩ typical RDS(ON), 120A continuous drain current, and high cell density for fast switching applications in power conversion.	Original	PDF

120N20 Price and Stock

Filter by Manufacturer

Select Manufacturer


Torex Semiconductor LTD XC6120N202NR-G IC SUPERVISOR 1 CHANNEL SSOT24
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	XC6120N202NR-G	Cut Tape	2,913		1	1 $0.38 10 $0.26 100 $0.20 1000 $0.17 10000 $0.17	Buy Now
	XC6120N202NR-G	Digi-Reel	2,913		1	1 $0.38 10 $0.26 100 $0.20 1000 $0.17 10000 $0.17	Buy Now
	XC6120N202NR-G	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now
Mouser Electronics	XC6120N202NR-G		2,900			1 $0.38 10 $0.26 100 $0.20 1000 $0.17 10000 $0.16	Buy Now
TME	XC6120N202NR-G				1	1 $0.40 10 $0.28 100 $0.21 1000 $0.18 10000 $0.18	Get Quote
Avnet Silica	XC6120N202NR-G			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTP120N20X4 MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP120N20X4	Tube	498		1	1 $9.49 10 $9.49 100 $4.83 1000 $4.29 10000 $4.29	Buy Now
Mouser Electronics	IXTP120N20X4		749			1 $7.26 10 $5.06 100 $4.82 1000 $4.68 10000 $4.68	Buy Now
TTI	IXTP120N20X4	Tube	250		50	1 - 10 - 100 $4.82 1000 $4.72 10000 $4.72	Buy Now
IXYS Corporation IXFH120N20P MOSFET N-CH 200V 120A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH120N20P	Tube	235		1	1 $13.99 10 $13.99 100 $8.52 1000 $7.13 10000 $7.13	Buy Now
Mouser Electronics	IXFH120N20P		576			1 $13.99 10 $7.84 100 $7.84 1000 $7.31 10000 $7.12	Buy Now
Newark	IXFH120N20P	Bulk			1	1 $13.82 10 $8.40 100 $7.72 1000 $7.32 10000 $7.32	Buy Now
TTI	IXFH120N20P	Tube	300		30	1 - 10 - 100 $7.82 1000 $7.21 10000 $7.13	Buy Now
TME	IXFH120N20P		53		1	1 $12.94 10 $9.13 100 $8.71 1000 $8.71 10000 $8.71	Buy Now

Chip Stock	IXFH120N20P		158			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTH120N20X4 MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH120N20X4	Tube	220		1	1 $11.00 10 $11.00 100 $6.56 1000 $5.21 10000 $5.21	Buy Now
Mouser Electronics	IXTH120N20X4		1,556			1 $7.47 10 $5.84 100 $5.84 1000 $5.58 10000 $5.48	Buy Now
TTI	IXTH120N20X4	Tube			300	1 - 10 - 100 - 1000 $5.32 10000 $5.32	Buy Now
Infineon Technologies AG IPP120N20NFDAKSA1 MOSFET N-CH 200V 84A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP120N20NFDAKSA1	Tube	53		1	1 $5.08 10 $5.08 100 $2.12 1000 $2.12 10000 $2.12	Buy Now
Avnet Americas	IPP120N20NFDAKSA1	Tube			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IPP120N20NFDAKSA1	Bulk			1	1 $4.89 10 $4.51 100 $2.08 1000 $2.07 10000 $2.07	Buy Now
Rochester Electronics	IPP120N20NFDAKSA1		25		1	1 - 10 - 100 $1.95 1000 $1.74 10000 $1.64	Buy Now
TME	IPP120N20NFDAKSA1		18		1	1 $6.43 10 $4.91 100 $3.67 1000 $3.67 10000 $3.67	Buy Now

Rutronik	IPP120N20NFDAKSA1	Tube	200		1	1 - 10 - 100 - 1000 $2.37 10000 $1.94	Buy Now
Chip One Stop	IPP120N20NFDAKSA1	Tube	5,369	0 Weeks, 1 Days	1	1 $4.42 10 $3.50 100 $1.96 1000 $1.95 10000 $1.95	Buy Now
Chip Stock	IPP120N20NFDAKSA1		15,631			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IPP120N20NFDAKSA1		12,131			1 - 10 - 100 $3.51 1000 $3.15 10000 $3.15	Buy Now

Find more 120N20 price and stock on Findchips.com

120N20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
120N20 Contextual Info: IXFX 120N20 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 200 V 120 A 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS	Original	120N20 120N20	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 120N20 ID104 247TM O-264 125OC 728B1	PDF
120N20 Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 120N20 ID104 247TM O-264 125OC 728B1	PDF
e15343 Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTR 120N20P VDSS = 200 V ID25 = 85 A Ω RDS on ≤ 25 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200	Original	120N20P e15343	PDF
ID104 Abstract: IXFX Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200	Original	120N20 ID104 247TM ID104 IXFX	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 RDS on = (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW	Original	120N20 ISOPLUS247TM 247TM	PDF
120N20 Abstract: motor IG 2200 19 125OC ID104 Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 ID104 247TM 125OC 728B1 120N20 motor IG 2200 19 125OC ID104	PDF
Contextual Info: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	120N20P O-264	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 ID104 247TM 125OC 728B1	PDF
NS152 Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXFN 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 220 ns trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	120N20P NS152	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200	Original	120N20 120N20 ID104 247TM O-264	PDF
120n20 Abstract: ID104 Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 ID104 247TM 728B1 123B1 728B1 065B1 120n20 ID104	PDF
120N20 Abstract: DS965 Contextual Info: IXFN 120N20 HiPerFETTM Power MOSFETs VDSS ID25 = 200 V = 120 A Ω = 17 mΩ Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	120N20 OT-227 E153432 728B1 120N20 DS965	PDF
120N20P Contextual Info: PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	120N20P O-247 120N20P	PDF

Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFR 120N20 ISOPLUS247™ Electrically Isolated Back Surface Symbol Test Conditions v T j = 25° C to 150° C ^ = 25°Cto150°C ;R GS=1 Mi2 200 200 V V Continuous T ranslent ±20 £30 V V Tc = 25° C (MOSFET chip capability)	OCR Scan	120N20 ISOPLUS247TM Cto150 247TM	PDF
Contextual Info: IXFN 120N20 HiPerFET TM Power MOSFETs VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	120N20 OT-227 E153432	PDF
120N20 Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	120N20 120N20 ID104 247TM O-264 125OC 728B1	PDF
Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	120N20P	PDF
IXFH120N20P Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 140 ns trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	120N20P IXFH120N20P	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	120N20 OT-227 E153432	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	120N20 ISOPLUS247TM 728B1	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	120N20 OT-227	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS	Original	120N20 ISOPLUS247TM 728B1	PDF
120N20P Abstract: IXTQ120N20P 120N20 Contextual Info: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	120N20P O-264 120N20P IXTQ120N20P 120N20	PDF

120N20 Search Results

120N20 Datasheets (2)

120N20 Price and Stock

Torex Semiconductor LTD XC6120N202NR-G

IXYS Corporation IXTP120N20X4

IXYS Corporation IXFH120N20P

IXYS Corporation IXTH120N20X4

Infineon Technologies AG IPP120N20NFDAKSA1

120N20 Datasheets Context Search

120N20

120N20

e15343

ID104

120N20

NS152

120n20

120N20

120N20P

120N20

IXFH120N20P

120N20P