120IS Search Results

tl741

Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
Contextual Info: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic

pal 007c

Abstract: b1100 nec LDP16 sulzer s7 7-segment countdown timer MDP36 100LQ128 3pin round shell connector DP83932B LT1084CT-3.3
Contextual Info: MiniRISC BDMR4011 Evaluation Board User’s Guide A CoreWare® Product March 1998 ® Order Number XXXXX Document DB15-000055-00, First Edition March 1998 This document describes revision A of LSI Logic Corporation’s BDMR4011 Evaluation Board and will remain the official reference source for all revisions/releases of this product until rescinded by an update.

TC297

Abstract: LSE 0405 HUF76132S3
Contextual Info: ? *3 2 £ HUF76132P3, HUF76132S3, HUF76132S3S 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs July 1998 | Features • Logic Level Gate Drive Description w These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the

Joongwon Rapid Fuse

Abstract: AC300V JR33-100 jr31 JR30TYPE jr56 JR31-30 A75031 k22s JR36-20
Contextual Info: JOONGWON RAPID FUSE n 4 ^ i l • 250V 300V 600V o x TT F — FUSE JR20M JR30S 1 1 1 J R 6 0 S Ì 250V JR20TYPE 300V CURRENT LIMITING FUSES FOR PROTECTING SEMICONDUCTORS JR30TYPE 600V JR60TYPE $ r § 5!p ap £ ! A l l a n NEW PRODUCT New Ceramic Fuse ULTRA-RAPID FUSE

Contextual Info: SOLITRON DEVICES INC T Ï 8368602 SOLITRON DÊ|fi3hflb02 D O Q 1 W D E V I C E S _ J NC p f X £ ? '• ' S < L tL O / u y ( 'S c n . j / o L.f / I j t h - 6 01497 û J t (-* l i T - 5 2 V / 7(3 - / 5aâ X V/fUï 3V*A" V VouT V out VouT V o u T J W u : 5 V/.CV

KP120

Contextual Info: HUF76132P3, HUF76132S3S S em iconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

25t65

Abstract: tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830
Contextual Info: Phillips Desc Philips Naed 36734-2 367342 375196 375196 37519-6 27556-0 27555-2 27558-6 209957 20995-7 38320-8 373902 373902 37390-2 246611 24661-1 299552 29955-2 299560 29956-0 347815 34781-5 348037 34803-7 37474-4 374769 37476-9 27086-8 239442 22300-8 370221

Contextual Info: MwT-15 M ic r o w a v e T 26 GHz High Power GaAs FET echnology -»j 50 p • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF j* | ^ 0 M » » j P _ 75 241 _ 72

Contextual Info: BIG G ER Si/.i: LED LAMPS ROUND T YPES Chip Package P a r t No. E m itte d C olor A b s o lu te R a tin g s Lens A A A p p earan ce Pd (rim) fmW! M a x im u m E le c tro -o p tic a l D a ta (A t 20mA) Vf(V) If(m A ) Iv T y p P eak [f(m A )[T yp. M ax. (m cd)