120G Search Results

A 472G

Contextual Info: RF INDUCTORS - SURFACE MOUNT SM3G Temperature Stable Tight Tolerance RF Inductors PART L µH ±2% @ MHz NUMBER SM3-100G SM3-120G SM3-150G SM3-180G SM3-220G SM3-270G SM3-330G SM3-390G SM3-470G SM3-560G SM3-680G SM3-820G SM3-101G SM3-121G SM3-151G SM3-181G SM3-221G

Contextual Info: T T WPF29640-120GVI WHITE /MICROELECTRONICS 64M BYTE 4x4Mx32 FLASH (5VSupply;5V Program) SIMM MODULE A D VA N C ED * FEATURES • A ccess Tim e of 120ns ■ 10,000 E rase/Program Cycles Packaging: • B lock Erase/Program Lockout du ring Pow er T ra n sitio n s

Contextual Info: VZÀ WHITE /MICROELECTRONICS WPF29160-120G1XX 16M BYTE 4x1M x32 FLASH (5VSupply; 12V Program ) S IM M MODULE p r e l im in a r y * FEATURES GENERAL DESCRIPTION • A cce s s T im e o f 120ns The W h i t e M ic r o e le c t r o n ic s W P F 2 9 1 6 0 -1 20G 1XX is a 4 x 1M x 32

semikron skim 93

Abstract: 120gd176d
Contextual Info: SKiM 120GD176D Absolute Maximum Ratings Symbol Conditions IGBT  # #23 4 6 * ,  SKiM 4 SKiM 120GD176D Preliminary Data Features                                

Contextual Info: MO312CP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.750f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage12 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: VATC292A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio6.0 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.4k f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleN/A

Contextual Info: MO312CM Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.750f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage12 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W).25 Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: MS4521F Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W).75 Semiconductor MaterialSilicon Package StylePin

24 v motor forward reverse control diagram

Abstract: RM10TA-24,-2H
Contextual Info: MITSUBISHI DIODE MODULES RM10TA-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM10TA-24,-2H • to DC output current . 20A • V rrm Repetitive peak reverse voltage 120G/16QOV • 3 phase bridge • insulated Type • UL Recognized

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 0.68kgf min. Mating force: 150gf~1800gf Unmating force: 120gf~1500gf Durability: 5000 Cycles Power Connector BP Series Right Angle 2.00mmPitch 9 Pos. Electrical Current Rating: 7A max. Current Voltage: 30V DC

Contextual Info: a WPF29041-120G1XX WHITE /M ICROELECTRONICS 4MBYTE 1Mx32 FLASH (5VSupply; 12V Program) S IM M MODULE p r e lim in a r y * FEATURES GENERAL DESCRIPTION • Access Tim e of 120ns The W h ite M icroelectronics WPF29041-120G1XX is a 1M x 32 bits ■ 80-pin Flash Single In-line M em ory M odule (SI M M ). The WPF29041-

phoenix connector

Abstract: foxconn 77GF
Contextual Info: SPECIFICATIONS Phoenix connector QF* S e ries SMT Type 1.27 mm [0.050”] Pi t ch Mechanical Contact Mating Force: 75gf min., 120gf max. Contact Unmating Force: 46gf min., 77gf max. Durability: 1000 Cycles Electrical Current Rating: 0.5A max. Contact Resistance: 40mΩ max.

Contextual Info: EXAMPLE & ORDERING CODE 4 1 SPECIFICATIONS Insulator: P.B.T. and glass-fiber reinforced UL 94V-0 MATERIAL AND FINISH: Shell: Material: JIS G3141 SPCC-SD Equivalent to ANS11008 Plating: Tin Thickness: Base Copper: 40p" Base Nickel: 40g" : Tin: 120g” Contacts:

Contextual Info: Drawing Number – W34 Outline Number – 101A287 Weight 120g Westcode Customer Services email: wsl.sales@westcode.com Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448

Contextual Info: SKiM 120GD176D   / 4",    %    Absolute Maximum Ratings Symbol Conditions IGBT "* 5  4" " 5  7/2 4" ":; 7022 ) 772     8  02 4" 9/  /2  > 2 ) 72 B    8  / 4" 72/     8  02 4" 92  22  7DD2  )=* SKiM 4

Contextual Info: 4041-11-01 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

300f diode

Contextual Info: 4041-11-02 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)4.0 Semiconductor MaterialSilicon Package StyleN/A

CECY-120G

Abstract: CECY-160G
Contextual Info: CECY型压力变送器 返回主页 页码，1/1 返回[产品介绍] 返回上一页 CECC型压力变送器 型号规格表 型号 测量范围 （连续可调） CECY-120G 1-1/6kPa CECY-130G 0-6/40kPa CECY-140G 0-40/250kPa CECY-150G 0-0.16/1MPa CECY-160G

Contextual Info: PA0705J Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.900f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage6.0 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)0.2 Semiconductor MaterialSilicon Package StyleMELF-3.3

Contextual Info: MS3166 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap. C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W) Semiconductor Material Package StyleN/A Mounting Style-

Contextual Info: -SUB CONNECTORS EXAM PLE & ORDERING CODE SPECIFICATIONS MATERIAL AND FINISH: Shell: Material: JIS G3141 SPCC-SD tquivalem to ANS11008 Plating: Tin Thickness: Base Copper: 40p'' Base Nickel: 40g" Tin: 120g" Contacts: Material: Brass male Brass or Phosphor Bronze (female)

Contextual Info: a WHITE /MICROELECTRONICS WPF29160-120G1XX 16MBYTE 4x1Mx32 FLASH (5VSupply; 12V Program) S IM M MODULE PRELIMINARY* FEATURES GENERAL DESCRIPTION • A c c e ss Tim e of 1 20ns The W h ite M icro e le ctro n ics W P F29160-120G 1X X i s a 4 x 1 M x 3 2 ■

Contextual Info: a M/HITE /MICROELECTRONICS WPF29640-120GVI 64MBYTE 4x4Mx32 FLASH (5VSupply; 5V Program) S IM M MODULE advanced* FEATURES • Access Tim e o f 1 20ns ■ 10,000 Erase/Program Cycles ■ Packaging: ■ Block Erase/Program Lockout during P o w e r Tra n sitio n s

Contextual Info: SPECIFICATIONS Mechanical Contact Retention Force: 0.68kgf min. Mating force: 2400gf max Unmating force: 120gf~1800gf Durability: 5000 Cycles Power Connector BR Series Vertical 2.00mmPitch 8 Pos. Electrical Current Rating: 7A max. Current Voltage: 30V DC Contact Resistance: 20mΩ max. initial