1208 MARKING Search Results
1208 MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN | |||
5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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1208 MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification |
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NESG2031M16 NESG2031M16 NESG2031M16-T3 PU10394EJ01V0DS | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large. |
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500mA 250mA 200mA L2SA2030M3T5G | |
Switching diode 80V 200mA
Abstract: ROHM 1SS390 MARKING 68B9 47B diode
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1SS390 1SS400 RB520S-30 RB521S-30 RB751S-40 A/80V A/30V 30mA/40V 40msec Switching diode 80V 200mA ROHM 1SS390 MARKING 68B9 47B diode | |
VISHAY DATE CODE
Abstract: 3 pins trimmer resistor 10K ohm marking 722 RJ12 1208LB
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20ppm/ 50ppm/ 28-Aug-02 VISHAY DATE CODE 3 pins trimmer resistor 10K ohm marking 722 RJ12 1208LB | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large. |
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500mA 250mA 200mA L2SA2030M3T5G S-L2SA2030M3T5G AEC-Q101 | |
Vishay DaTE CODEContextual Info: 1208 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers 1 1/4 Inch Rectilinear, RJ12 Style - Industrial Trimmer FEATURES • Temperature Coefficient of Resistance TCR : ± 20ppm/°C Maximum3 (– 55°C to + 150°C Ref. @ + 25°C); |
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20ppm/ 50ppm/ 08-Apr-05 Vishay DaTE CODE | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large. |
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500mA 250mA 200mA L2SA2030M3T5G | |
RJ12 pin out
Abstract: Vishay DaTE CODE 3 pins trimmer resistor 10K ohm marking 722 RJ12
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20ppm/ 50ppm/ 18-Jul-08 RJ12 pin out Vishay DaTE CODE 3 pins trimmer resistor 10K ohm marking 722 RJ12 | |
Contextual Info: 1208 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers 1 1/4 Inch Rectilinear, RJ12 Style - Industrial Trimmer FEATURES • Temperature Coefficient of Resistance TCR : ± 20ppm/°C Max.3 (– 55°C to + 150°C Ref. @ + 25°C); |
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20ppm/ 50ppm/ Leads13mm) 02-Jul-01 | |
Contextual Info: Preliminary Data Sheet NESG3032M14 R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG <R> FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification |
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NESG3032M14 R09DS0048EJ0300 NESG3032M14 NESG3032M14-A NESG3032M14-T3 NESG3032M14-T3-A | |
NEC JAPAN
Abstract: NESG3031M14 NESG3031M14-T3
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NESG3031M14 NESG3031M1conductor NEC JAPAN NESG3031M14 NESG3031M14-T3 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large. |
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500mA 250mA -200mA -10mA L2SA2030M3T5G OT-723 | |
Z181Contextual Info: STANDARD SERIES D56ZOV181RA1R3 MAIDA STYLE NUMBER Electrical Specifications MAIDA ITEM NUMBER 01-1208 Physical Specifications Continuous AC Voltage 180 VAC Lead Style Continuous DC Voltage 230 VDC X Nominal 0.16 in. 200 uA X Tolerance 0.04 in. Low Varistor Voltage Limit |
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D56ZOV181RA1R3 005M2 Z181 | |
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications |
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NESG2021M16 NESG2021M16-A M8E0904E | |
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Contextual Info: LPC4357 Developer’s Kit - User’s Guide Copyright 2014 Embedded Artists AB LPC4357 Developer’s Kit User’s Guide Get Up-and-Running Quickly and Start Developing Your Application On Day 1! EA2-USG-1208 Rev A LPC4357 Developer’s Kit - User’s Guide |
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LPC4357 EA2-USG-1208 ddi0403c/index ddi0439c/index LPC2000 com/group/lpc2000/ | |
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, |
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NESG2101M16 NESG2101M16 PU10395EJ03V0DS | |
Contextual Info: Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification |
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NESG3033M14 R09DS0049EJ0300 NESG3033M14 NESG3032M14. NESG3033M14-A | |
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification |
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NESG4030M14 NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M14-T3-A | |
2SC5800
Abstract: NESG2046M33 NEC JAPAN IC
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PA869TD NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33 NEC JAPAN IC | |
NEC JAPAN
Abstract: NESG2021M16 NESG2021M16-T3
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NESG2021M16 NEC JAPAN NESG2021M16 NESG2021M16-T3 | |
Contextual Info: Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification |
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NESG3033M14 NESG3033M14 NESG3032M14. R09DS0049EJ0300 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A | |
Contextual Info: SDS power choke coil EU features • Marking: Black body color • Products with lead-free terminations meet EU RoHS and China RoHS requirements 0804, 0805, 1003, 1005 0906, 0908 101 1 A Marking: Pin. 1 Side 101 A C F B C D F F' E E E E W 3.0 1205, 1206, 1208 |
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SDS0804 SDS1003 SDS1005 | |
SDS1208
Abstract: SDS0804 SDS1206TTEB391
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SDS0804 SDS1003 SDS1005 SDS1208 SDS0804 SDS1206TTEB391 | |
sds1206Contextual Info: SDS power choke coils EU features • Marking: Black body color • Products with lead-free terminations meet EU RoHS and China RoHS requirements 0804, 0805, 1003, 1005 0906, 0908 101 1 A Marking: Pin. 1 Side 101 A C F B C D F F' E E E E W 3.0 1205, 1206, 1208 |
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SDS0804 SDS0805 sds1206 |