1204 TRANSISTOR Search Results

Contextual Info: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors

autotransformer starter medium voltage

Abstract: H9208 relay HM 810
Contextual Info: www.toshiba.com/ind 2013 Toshiba International Corporation • Rev. 130222 Industrial Catalog 2013 13131 W. Little York Road • Houston, TX 77041 Tel: 713-466-0277 Fax: 713-466-8773 US: 800-231-1412 Canada: 800-872-2792 Mexico: 800-527-1204 2013 Industrial Catalog

Contextual Info: KSR2204 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=47K£1, R2=47K£1) • C om plem ent to KSR 1204 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: SP -1204 Bond Pad □ Buried Zener Nichrome Clear Field Area N+ /P+ Diode | j P-JFET Q DBNPN I DBPNP ( | ) MNPN [j Pinch Resistor @ MPNP 4.5pF Capacitor A Tile 6pF Capacitor 7pF Capacitor 2 BTile [] SPNP “ SNPN SP1204 COMPONENT COUNT SUMMARY DESCRIPTION

Contextual Info: Z8 GPTM Microcontrollers ZGP323L OTP MCU Family Product Specification PS023703-1204 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition

2SA1204

Abstract: 2SC2884 SA12
Contextual Info: T O S H IB A 2SA 1204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 12 0 4 AUDIO FREQUENCY AM PLIFIER APPLICATIONS High DC Current Gain : 1i f = 100~320 e Suitable for Output Stage of 1 W atts Amplifier P q = 1~2W (Mounted on Ceram ic Substrate)

1204 transistor

Contextual Info: Z8 GPTM Microcontrollers ZGP323H OTP MCU Family Product Specification PS023802-1204 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition

FAH 37

Contextual Info: CrimzonTM ZLP32300 Z8 OTP MCU with Infrared Timers Product Specification PS020814-1204 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition

1204 transistor

Abstract: transistor pnp 3015 1202 transistor transistor 1202 Transistor 1204 PPOSS1 transistor b 1202 NPOSS 1805PPOSS NPCSL
Contextual Info: Proximity Sensors Inductive Stainless Steel Housing Types EI, DC, M12, M18, M30 • Stainless steel housing, cylindrical • Diameter: M12, M18, M30 • Short or long versions • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC • Output: Transistor NPN/PNP, make or break switching

PPOPL EI 3015

Abstract: transistor pnp 3015 EI3015PPOPL transistor b 1202 1204 transistor transistor 1202 ppcpl PPOPL1 ei 48 f SEI-1202
Contextual Info: Proximity Sensors Inductive Thermoplastic Polyester Housing Types EI, DC, M12, M18, M30 • Euronorm thermoplastic polyester housing, cylindrical • Diameter: M12, M18, M30. • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN/PNP, make or break switching

2SA1298

Abstract: 2SC3265
Contextual Info: TO SHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LO W FREQUENCY PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS + 0.5 High DC Current Gain : hjpg (i) = 100~320 Low Saturation Voltage : V qe (sa^) = 0.4 V (Max.)

equivalent transistor 1204

Abstract: RN1201 RN1202 RN1203 RN1204 RN1205 RN1206 RN2201 RN1201-RN1206 1204 transistor
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

Contextual Info: LT1204 4-Input Video Multiplexer with 75MHz Current Feedback Amplifier DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.1dB Gain Flatness > 30MHz Channel Separation at 10MHz: 90dB 40mV Switching Transient, Input Referred – 3dB Bandwidth, AV = 2, RL = 150Ω: 75MHz

sn1204

Abstract: L1204 1204 video rgb splitter amplifier schematic 1204 transistor HP4195A LT1204 LT1204CN LT1204CS LT1204CSW
Contextual Info: LT1204 4-Input Video Multiplexer with 75MHz Current Feedback Amplifier DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.1dB Gain Flatness > 30MHz Channel Separation at 10MHz: 90dB 40mV Switching Transient, Input Referred – 3dB Bandwidth, AV = 2, RL = 150Ω: 75MHz

RN1201

Abstract: RN1202 RN1203 RN1204 RN1205 RN1206 RN2201
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

RN1202

Abstract: RN1206 RN1204 RN1201 RN1203 RN1205 RN2201 equivalent transistor 1204
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design

RN1204

Abstract: RN1203 RN1206 rn1201 RN1202 RN1205 RN2201 equivalent transistor 1206
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors. l Simplify circuit design

RN1204

Abstract: RN1201 RN1202 RN1203 RN1205 RN1206 RN2201 1206 transistor
Contextual Info: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design

MIC 4070

Abstract: adc crosstalk 20434 conexant D7300 1200FX 1204F2 pcm multiplexer how to use pdmx 33 uF polarized capacitor conexant
Contextual Info: 6RIW$0&$XGLR0RGHP&RGHF AMC ’97 Audio Modem Codec with Host-Processed HSF V.90/K56flex Modem and Host-based Audio Software with AC-link Interface 'LVWLQJXLVKLQJ)HDWXUHV  6RIW$0& $XGLR 0RGHP &RGHF $0& FRPELQHV WZR 7KH &RQH[DQW • FRGHUGHFRGHU IXQFWLRQV FRPSOLDQW ZLWK ,QWHO $XGLR &RGHF ¶  ([WHQVLRQV IRU D

equivalent transistor 1204

Abstract: 1204 transistor Transistor 1204 SRC1204M
Contextual Info: SRC1204M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

E0C6001

Abstract: E0C6002 E0C6003 E0C6004 S1C60N06 60N01 capasitor 1.2 mf
Contextual Info: MF1114-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N06 Technical Manual S1C60N06 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

din 7184

Contextual Info: 19- 1179; Rev 0; 1/97 V M / X IA I 5V, 8-Channel, S erial, 10-Bit ADC w ith 3 V D ig ita l In te rfa c e A 4 -w ire s e ria l in te rfa c e c o n n e c ts d ire c tly to SPI /Microwire™ devices without external logic, and a s e ria l s tro b e o u tp u t a llo w s d ire c t c o n n e c tio n to

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code