1200V 25A TO247 Search Results

Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V

inverter welding machine

Abstract: FAIRCHILD Igbts FGH25N120FTDS fgh25n120 IGBT Transistor 1200V, 25A
Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

Contextual Info: APT25GR120B_SDU15 APT25GR120BDU15 APT25GR120SDU15 1200V, 25A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode (B) The Ultra Fast 1200V NPT-IGBT family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

FGW25N120VD

Abstract: A602
Contextual Info: / FGW25N120VD Discrete IGBT Discrete IGBT High-Speed V series 1200V / 25A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive

5N120CND

Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 transistors equivalent
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5N120CND

Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

HGT1S5N120CNDS

Abstract: HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

5n120

Abstract: 5N120CND 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 5N120CN
Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

APT25GR120B

Contextual Info: APT25GR120B_S APT25GR120B APT25GR120S 1200V, 25A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT (B) TO The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between

Contextual Info: APT25GR120B_SSCD10 APT25GR120BSCD10 APT25GR120SSCD10 1200V, 25A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior

APT25GR120BD15

Contextual Info: APT25GR120B_SD15 APT25GR120BD15 APT25GR120SD15 1200V, 25A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT (B) TO The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between

Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)

Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS S e m iconductor Data Sheet March 1999 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

Contextual Info: Preliminary Datasheet RJH1CD6DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0518EJ0400 Rev.4.00 Jan 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

I.C LA 3778

Abstract: transistor on 4436 IRGP30B120KD-E AK 2118 250 KD res transistor VCE 1000V 30A GE-5045
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

Contextual Info: Preliminary Datasheet RJH1CM7DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0522EJ0400 Rev.4.00 Jul 02, 2012 Features • Short circuit withstand time 10 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH1CV5DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0523EJ0600 Rev.6.00 Feb 14, 2013 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

600V 25A Ultrafast Diode

Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
Contextual Info: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability

Contextual Info: Preliminary Datasheet RJH1CD6DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0518EJ0500 Rev.5.00 Jun 12, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH1CV5DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0523EJ0500 Rev.5.00 Jun 12, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

motor IG 2200 19 x 00 15 r

Abstract: 12v dc motor IG 2200 19
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

Contextual Info: Preliminary Datasheet RJH1CV5DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0523EJ0500 Rev.5.00 Jun 12, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH1CM7DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0522EJ0300 Rev.3.00 Jan 19, 2012 Features • Short circuit withstand time 10 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH1CV5DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0523EJ0700 Rev.7.00 Jun 12, 2013 Features • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)