12-CE 519 Search Results

Contextual Info: FS98O21-DS-13_EN Datasheet DEC 2008 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.3 FS98O21 Fo 8-bit MCU with 2k program EPROM, 128-byte RAM, 1 low noise OPAMP, 6-ch 14-bit ADC, 4 x 12 LCD driver and RTC FS98O21 Fo F P r R ro SC ef pe ’ er rti en es

Contextual Info: FS98O23-DS-14_EN JUL 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.4 Datasheet FS98O23 8-bit MCU with 8k program EPROM, 384-byte RAM, 2 low noise OPAMP, 12-ch 14-bit ADC, 4 x 40 LCD driver and RTC FS98O23 FO Fo P R r R ro TU ef pe NE er rti

Contextual Info: H ig h P e r f o r m a n c e 3 2 K x 8 3 .3 V C M O S SR AM a i A S7C 3256 A Low voltage 3 2K X 8 CMOS SRAM • T T L -co m p atib le, th re e -s ta te I / O • S ingle 3 .3 ± 0 .3 V p o w e r s u p p ly • Id eal f o r cache, m o d e m , p o rta b le c o m p u tin g

CB4CLED

Abstract: vhdl code for 2-bit BCD adder CB4CLE TTL 7400 CC16CLE cb4ce code D24E XC400XL CB2CE CB16CE
Contextual Info: Libraries Guide Xilinx Unified Libraries Selection Guide Design Elements ACC1 to BYPOSC Design Elements (CAPTURE_VIRTEX to DECODE64) Design Elements (F5MAP to FTSRLE) Design Elements (GCLK to KEEPER) Design Elements (LD to NOR16) Design Elements (OAND2 to OXOR2)

Contextual Info: PRELIMINARY 2 MEG, BIOS-OPTIMIZED, BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F200C1 MT28F002C1 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB)

512m pc133 SDRAM DIMM

Abstract: 512m pc133 SDRAM DIMM 168 elpida PC133 registered reference design
Contextual Info: HB52RF1289E2-75B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM E0018H20 (Ver. 2.0) Aug. 20, 2001 (K) Description The HB52RF1289E2 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

pulse 01940

Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2

2 pin crystal oscillator 4mhz

Abstract: crystal oscillator clock 4MHZ
Contextual Info: ◆CMOS :Low Power Consumption ◆Oscillation Frequency : 4MHz ~ 70MHz ◆Built-In Oscillator Capacitors ◆Divider Ratio : fo/1, fo/2, fo/4, fo/8 ◆3-State Output ◆Supply Voltage : 5.0V ◆Mini Mold SOT-26 Package •GENERAL DESCRIPTION ■APPLICATIONS

Contextual Info: HUGHES H3248 AIRCRAFT 2048 x 4 CMOS EEPROM COVPANY MICROELECTRONICS CENTER DESCRIPTION Hughes H3248 is a CMOS Electrically Erasable and Programmable ROM EEPROM organized as 2048 x 4. Read, write and erase operations are performed with a single 5V power supply using TTL

512m pc133 SDRAM DIMM

Abstract: HM5225405B-75 Hitachi DSA00164 HM5225405BTB Nippon capacitors
Contextual Info: a HB52RF1289E2-75B 1 GB Registered SDRAM DIMM 128-Mword x 72-bit, 133 MHz Memory Bus, 2-Bank Module 36 pcs of 64 M × 4 Components PC133 SDRAM ADE-203-1079A (Z) Preliminary Rev. 0.1 Aug. 10, 1999 Description The HB52RF1289E2 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB52RF1289E2 is a 64M

Contextual Info: FS98O25-DS-13_EN Datasheet DEC 2008 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.3 FS98O25 Fo 8-bit MCU with 8k program EPROM, 256-byte RAM, 2 low noise OPAMP, 8-ch 14-bit ADC, 4 x 32 LCD driver and RTC FS98O25 Fo F P r R ro SC ef pe ’ er rti en es

Contextual Info: HUGHES H3248 2048 x 4 CMOS EEPROM MICROELECTRONICS CENTER DESCRIPTION Hughes H 3248 is a CMOS Electrically Erasable and Programmable ROM EEPROM organized as 2048 x 4. Read, w rite and erase operations are performed with a single 5V power supply using TTL

61-BF

Contextual Info: BDT61F; 61AF BDT61BF; 61CF ’H I L I P S I N T E R N A T I O N A L 5fc,E D .J. 7110fl5b 0 0 4 3 2 3 D • 7^3 ■ P H I N SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope

Contextual Info: PRELIMINARY AM D il Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Sim ultaneous Read/W rite operations ■ — Hardware method of locking a sector to prevent any program or erase operation within that

EL5192

Abstract: EL5193 EL5193A EL5193CW-T7 EL5292 EL5293 EL5392 EL5393 F 5 Ld SOT-23 MDP0038
Contextual Info: NS ESIG W D 163 E N FOR 162/EL5 DED 5 MEN 5161, EL M O C L E E / R NOT E EL516 SE Data Sheet Single 300MHz Current Feedback Amplifier with Enable EL5193, EL5193A April 24, 2006 FN7182.3 Features • 300MHz -3dB bandwidth The EL5193 and EL5193A are current feedback amplifiers

R1210N

Abstract: R1210N302C R1210N302D R1210N502C R1210N502D R1210N602C 76139 U33-14 m500ms P533
Contextual Info: 62705608#3:0#6WHS0XS#'&2'& &219 57(5 545431±±5±#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-064-0006 SOT-23-5 PWM Step-up DC/DC CONVERTER 545431ðð5ð#6(5,(6 OUTLINE 7KH#545431;5&2;5'#6HULHV#DUH#3:0#VWHS0XS#'&2'&# & \

WONDERWARE iNTOUCH HMI

Abstract: CP6207 CP6202 CP6201 jd 1803 CP7702 CP7202 CP6202-1015-0020 CP7203 jd 1803 19 B
Contextual Info: BeckhofF New Automation Technology Beckhoff Panel PC powered by Wonderware POWERED BY CP620x-1xxx-0020 | “Economy” built-in Panel PC powered by Wonderware The slimline built-in Industrial PC with 3½-inch motherboard The CP62xx built-in Panel PC series is designed for installation in the

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IR 18779

Abstract: NEC Ga FET marking L nec gaas fet marking
Contextual Info: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AM PLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise fig u re & High a sso cia te d gain • G ate le n g th : Lg = 0.3 /¿m • G ate w id th : Wg NF = 1.6 dB TYP ., G a = 9.0 dB TYP. at f = 12 G H z

transistor NEC D 587

Abstract: de 535
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 800T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAW INGS

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers