12 GHZ Search Results

divider

Abstract: 12-WAY 12GHz power divider
Contextual Info: JXWBGF-T-12-11.5-12-15 11.5~12GHz 12-Way Power Divider Test report is for reference only. TEST REPORT for JXWBGF-T-12-11.5-12-15 Page 1 JXWBGF-T-12-11.5-12-15 11.5~12GHz 12-Way Power Divider Technical Specification 11.5-12 Frequency Range GHz 1.5 Insertion Loss(dB)

BF777W

Abstract: BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606
Contextual Info: RF Bipolar Transistors For com plete package outlines, refer to pages PO-1 through PO-6 T yp e M a x im u m Ratings VCEO 'c N=NPN /t V mA mW GHz dB 'c mA VCE / V MHz 15 40 20 35 35 20 25 30 30 12 12 12 12 20 20 20 20 40 40 12 12 12 12 15 15 12 15 12 15 16

4503-sk case style

Abstract: fp35 diode 8109 2308-SK fp-31 1557-S SK diode 9001-SK 2508-SK SK 26 diode
Contextual Info: MICROWAVE CONTROL DEVICE SELECTION GUIDE TYPE FREO. RANGE GHz MODEL NO. INSERTION LOSS (dB) 2-4 4-8 8-12 12-18 ISOLATION (dB) 2-4 4-8 8-12 12-18 VSWR 4-8 8-12 12-18 2-4 REFLECT. SWITCHING OR SPEED TERM (ns) DRIVER TYPE CASE' STYLE PAGE NO. BROADBAND 2-18 GHz SWITCHES

Contextual Info: Suspended Substrate ◆ Specifications - Diplexer Filters Nominal Bandedge Passband Frequencies Frequencies GHz (GHz) DC-2 DC-1.9 2-4 2.1-4 DC-4 DC-3.8 4-8 4.2-8 DC-6 DC-5.7 6-12 6.3-12 DC-8 DC-7.6 8-12 8.4-12 DC-10 DC-9.5 10-16 10.5-16 DC-12 DC-11.6 12-18

1218

Abstract: DC-10
Contextual Info: JXWBLB-T-BP-12-18-S 12-18GHz SSS Band Pass Filter TEST REPORT For JXWBLB-T-BP-12-18-S 1 JXWBLB-T-BP-12-18-S 12-18GHz SSS Band Pass Filter Technical Specification 12-18 3dB Pass Band GHz 12.6-17.1 1dB Pass Band(GHz) 45dB min @ DC-10.2GHz 45dB min @ 20.7-22GHz

HIGH FREQUENCY 50 OHM HIGH POWER COAX CABLE

Abstract: DC-12
Contextual Info: 12 GHz hand formable .086 Coax cables 50 Ohm DC-12 GHz Hand Formable Coaxial Cables Features: Electrical Specifications: Impedance: 50 Ohms Frequency: DC to 12 GHz Insertion Loss: <0.82 dB/ft at 12 GHz VSWR: <1.3, DC to 12 GHz Nominal Capacitance: 28.6 pF/ft

MGF4313

Abstract: MGF4919
Contextual Info: LOW NOISE InGaAs H EM T M G F4xxxx Series Freq. GHz NFmin. (dB) 12 0 .8 0 0 .5 5 11.5 GG Palette 12 11.5 Palette 12 0 .4 5 11.5 GG GG 12 0 .7 5 0 .6 5 11.5 IG Palette 12 11.5 IG Palette I T yp ical C haracteristics 12 0 .5 5 11.5 IG MGF4714AP NH3F4814E MGF4918E

TC1201

Abstract: TC1202 TC1601 tc1501 TC1806 TC1101 TC1102 TC1301 TC1304 TC1801
Contextual Info: 20060526 FET Chips Products Selection Guide I. Super Lower Noise GaAs FETs Product No. Freq. GHz N.F. (dB) P-1 dB (dBm) Gain (dB) Notes TC1101 12 0.5 18.5 15 Chip TC1101V 12 0.5 18.5 15 Chip / with via hole TC1102 12 0.5 - 13 Chip TC1201 12 0.5 21.5 12 Chip

FPD200

Abstract: MIL-HDBK-263 400x400
Contextual Info: FPD200 GENERAL PURPOSE PHEMT • • DRAIN BOND PAD 1X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE

TC2181

Abstract: TC1101 0736 27319
Contextual Info: TRANSCOM TC2181 January 2002 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES • 0.5 dB Typical Noise Figure at 12 GHz PHOTO ENLARGEMENT • High Associated Gain: Ga = 12 dB Typical at 12 GHz • 18 dBm Typical Power at 12 GHz • 13 dB Typical Linear Power Gain at 12 GHz

FHX34X

Abstract: FHX13x
Contextual Info: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10

Contextual Info: SERIES 3.5/12 Series 3.5/12-CATV Serie 3.5/12-CATV Robuste und stabile koaxiale Steckverbindung mit Schraubfesthaltung mit besonderen Ansprüchen an Reflexionsfreiheit bis zur Grenzwellenlänge des Koaxquerschnitts ca. 12 GHz . Durch den Schraubverschluß wird eine mechanisch sichere

9435 GM

Abstract: TC1201 9435 72 TRANSCOM TC1201 6526 89 18 8244-27 TC2201
Contextual Info: TC2201 REV.2_04/12/2004 Plastic Packaged Low Noise PHEMT GaAs FETs FEATURES • • • • • • • PHOTO ENLARGEMENT 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 7 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 8 dB Typical Linear Power Gain at 12 GHz

Contextual Info: POWER SPLITTERS/COMBINERS 50 & 75Ω 12 WAY-0° 1 to 1700 MHz ZFSC-12 SURFACE MOUNT ZN12PD JEPS-12 PSC-12 ISOLATION dB FREQ. RANGE MHz MODEL NO. NEW fL-fU JEPS-12-10 PSC-12-1 50-1000 1-200 ZN12PD-17 800-1700 ZFSC-12-1 NEW n ZFSC-12-1W-75 ZFSC-12-11 • ZFSC-12-1-75

Contextual Info: 50 Ohm SMA PIN-Schottky Limiter With a Flat Leakage of 12 dBm From 7 GHz to 12 GHz TECHNICAL DATA SHEET PE8036 50 Ohm SMA PIN-Schottky Limiter With a Flat Leakage of 12 dBm From 7 GHz to 12 GHz Configuration Limiter Type RF Input Connector RF Input Impedance

TRANSISTOR C 6090 lg

Abstract: TRANSISTOR C 6090 TC1101 8484 au
Contextual Info: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz

TA075-180-24-12

Contextual Info: TA075-180-24-12 REV.0_04/12/2004 7.5 – 18 GHz 12 dBm Amplifier FEATURES • • • P1dB : 12 dBm NF : 4.5 dB Bias Condition: 200 mA @ 15 V ELECTRICAL SPECIFICATIONS Ta = 25 °C SYMBOL DESCRIPTION MIN TYP MAX UNITS 18 GHz 24 25.5 dB ±1.0 ±2.0 dB 4.5

4511 gm

Abstract: um 5506 gm 4511 AFM02N6-000 AFM02N6
Contextual Info: Low Noise GaAs MESFET Chip AFM02N6-000 • Low Noise Figure, 1.0 dB @ 12 GHz ■ Passivated Surface 100 ■ 0.25 µm Ti/Pd/Au Gates 200 ■ High MAG, >12 dB @ 12 GHz 300 ■ High Associated Gain, 9.5 dB @ 12 GHz 400 Dims µms : X = 400, Y = 620 Features 100

FPD7612

Abstract: MIL-HDBK-263
Contextual Info: FPD7612 GENERAL PURPOSE PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 11 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE BOND

lc CONNECTOR DRAWING

Abstract: 10GHz RF mixer
Contextual Info: JXWBHP-T-3000-4000-12 3~4GHz Mixer Test report is for reference only. TEST REPORT for JXWBHP-T-3000-4000-12 Page 1 JXWBHP-T-3000-4000-12 3~4GHz Mixer Technical Specification IF Frequency GHz 3.0~4.0 RF Frequency(GHz) 3.0~4.0 LO Frequency(GHz) 0.1~1.0 12 LO Power (dBm)

Contextual Info: MwT- PH15 28 GHz Medium Power AlGaAs/InGaAs PHEMT June 2004 Chip Dimensions: 775 x 241 microns Chip Thickness: 100 microns Features: +28.5 dBm typical Output Power at 12 GHz 12 dB typical Small Signal Gain at 12 GHz 60% typical PAE at 12 GHz 0.3 x 630 Micron Refractory Metal/Gold Gate

6822 TRANSISTOR

Abstract: TRANSISTOR 6822 gl 7445 6822 8891 transistor 9718 80Au-20Sn 6822 TRANSISTOR equivalent PT 6961 SN 46 LS 46
Contextual Info: TC1301 REV.2_04/12/2004 Low Noise and Medium Power GaAs FETs FEATURES • • • • Low Noise Figure: NF = 0.8 dB Typical at 12 GHz High Associated Gain: Ga = 10 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz • •

Filtronic* FPD6836

Abstract: FPD6836 MIL-HDBK-263
Contextual Info: FPD6836 0.25W POWER PHEMT • • FEATURES ♦ 25.5 dBm Linear Output Power at 12 GHz ♦ 10 dB Power Gain at 12 GHz ♦ 16.5 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 24 GHz ♦ 50% Power-Added Efficiency ♦ 8V Operation DRAIN BOND

ph15

Contextual Info: MwT- PH15 28 GHz Medium Power AlGaAs/InGaAs PHEMT June 2004 Chip Dimensions: 775 x 241 microns Chip Thickness: 100 microns Features: +28.5 dBm typical Output Power at 12 GHz 12 dB typical Small Signal Gain at 12 GHz 60% typical PAE at 12 GHz 0.3 x 630 Micron Refractory Metal/Gold Gate