12 AX 7 WA / ECC 83 Search Results

RTL 8188

Abstract: RAMB18SDP RAMB36 UG190 XC5VLX XC5VLX220T XC5VLX85T RAM32X1D SRLC32E xilinx jtag cable spartan 3
Contextual Info: Virtex-5 FPGA User Guide UG190 v5.2 November 5, 2009 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

RTL 8188

Abstract: RAMB18SDP differential amplifier cascade output UG190 vhdl code hamming ecc t3 bel 187 TRANSISTOR REPLACEMENT GUIDE 20303 RAMB36 FPGA Virtex 6
Contextual Info: Virtex-5 FPGA User Guide UG190 v5.0 June 19, 2009 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

RTL 8188

Abstract: RAMB18SDP xerox 1025 ISERDES Virtex-5 FPGA User Guide UG190 RAMB36 vhdl code hamming ecc RAMB36SDP RAMB18 UG190
Contextual Info: Virtex-5 FPGA User Guide UG190 v5.3 May 17, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

RTL 8188

Abstract: UG190 RAMB36 301071207 DO310 TRANSISTOR REPLACEMENT GUIDE XC5VLX220T XC5VLX85T RAMB18SDP
Contextual Info: Virtex-5 FPGA User Guide UG190 v4.4 December 2, 2008 R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AC72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000AC72F is a 4,194,304 words by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: /iPD4216400 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the

Amidon Tech

Abstract: 76006 CN yazaki AB DALE 9011 8760-A LE67 United Electronics Sumitomo rft
Contextual Info: Global Sales Offices General Semiconductor, Inc. Headquarters European Sales Offices continued 10 Melville Park Road Melville, NY 11747-3113 Tel: 516-847-3000 Fax:516-847-3236 United Kingdom and Ireland General Semiconductor (UK) Ltd. The Grand Union Office Park

bosch mp 5.2 ecu

Abstract: STK power amplifier 2145 STK and STR integrated circuits, 2011 edition RH76 ecu bosch 7.4.4 ICL Logic metal detector circuit with pcb bosch mp 3.2 ecu xc2000 instruction set IC BOSCH ISO 9141
Contextual Info: 16/32-Bit Architecture XC27x8X Derivatives 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Premium Line User’s Manual V1.0 2011-01 Microcontrollers Edition 2011-01 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: 16-Bit Architecture XE166N Derivatives 16-Bit Single-Chip Real Time Signal Controller XE166 Family / Value Line User’s Manual V1.2 2009-07 M ic r o co n t ro l l e r s Edition 2009-07 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG

Contextual Info: M ITSUBISHI LS Is MH8S72BBFD-7, -8 603,979,776-BIT 8,388,608-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH8S72BBFD is 8388608 - word x 72-bit Synchronous DRAM module. This consist of nine industry

bosch mp 5.2 ecu

Abstract: STK and STR integrated circuits, 2011 edition ha 1758 rq 8239 STK power amplifier 2145 psen rs 2.0-175 ICL Logic tricore loader 8255 Programmable Input-Output Port BOSCH ECU information
Contextual Info: 16-Bit Architecture XE166H Derivatives 16-Bit Single-Chip Real Time Signal Controller XE166 Family / High Line User’s Manual V1.1 2009-04 M ic r o co n t ro l l e r s Edition 2009-04 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG

Contextual Info: 16/32-Bit Architecture XC2200M Derivatives 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Base Line User’s Manual V2.0 2009-03 M ic r o co n t ro l l e r s Edition 2009-03 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: 16-Bit Architecture XE167xM/XE164xM/XE 162xM Derivatives 16-Bit Single-Chip Real Time Signal Controller XE166 Family / Base Line User’s Manual V2.0 2009-03 M ic r o co n t ro l l e r s Edition 2009-03 Published by Infineon Technologies AG 81726 Munich, Germany

Automotive ECU IC

Contextual Info: 16/32-Bit Architecture XC27x5X Derivatives 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Base Line User’s Manual V2.0 2009-03 M ic r o co n t ro l l e r s Edition 2009-03 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: 16/32-Bit Architecture XC2300A Derivatives 16/32-Bit Single-Chip Microcontroller with 32-Bit Performance XC2000 Family / Base Line User’s Manual V2.0 2009-03 M ic r o co n t ro l l e r s Edition 2009-03 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: I =¥= = = = ’= IBM13M8734HC-1OT IBM13M8734HC-322T Preliminary 8M x 72 1 Bank Registered SDRAM Module with PLL Features • 168 Pin Registered 8 Byte Dual In-line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: Reg. ! Buff. ! Reg. D IM M C A S La te n c y

3132* intel

Contextual Info: Intel Wireless Flash Memory W18 with A/D Multiplexed I/O Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 54 MHz — 60 ns Initial Access Read Speed — 14 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed

RTAX2000

Abstract: IDTQS32X2384 352-Pin
Contextual Info: Advanced v0.1  RTAX-S Family FPGAs Sp e ci a l F ea t ur es f o r Sp a ce • Up to 10,752 SEU Hardened Flip-Flops Eliminate Software TMR Necessity >LET th 37 LET, GEO SEU Rate <10-10 Errors/Bit-Day • Expected SRAM Upset Rate of <10-10 Errors/Bit-Day with

PH28F640W30BD70

Abstract: ge28f640w30td70 8857H 28F128W30 28F320W30 28F640W30 intel DOC GE28F640W30-B
Contextual Info: Intel Wireless Flash Memory W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features • ■ ■ ■ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed

CI R-Y 1028

Abstract: a gn 137
Contextual Info: Advanced v0.2  RTAX-S Family FPGAs Sp e ci a l F ea t ur es f o r Sp a ce • Up to 10,752 SEU Hardened Flip-Flops Eliminate Software TMR Necessity >LET th 37 LET, GEO SEU Rate <10-10 Errors/Bit-Day • Expected SRAM Upset Rate of <10-10 Errors/Bit-Day with

RTAX2000

Abstract: footprint cqfp 280 RTAX1000S actel cqfp 84
Contextual Info: A dv an c ed v0 .5 RTAX-S RadTolerant FPGAs Designed for Space • • • • • • • • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETth > 60 MeV-cm2/mg – SEU Rate < 10-10 Errors/Bit-Day in Worst-Case

power supply aps 231

Abstract: 8857H 28F128W30 28F320W30 28F640W30 intel DOC
Contextual Info: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O 28F320W30, 28F640W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed

29070* intel

Contextual Info: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed

Contextual Info: A dv an c ed v0 .5 RTAX-S RadTolerant FPGAs Designed for Space • • • • • • • • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETth > 60 MeV-cm2/mg – SEU Rate < 10-10 Errors/Bit-Day in Worst-Case

29070* intel

Contextual Info: 1.8 Volt Intel Wireless Flash Memory with 3-Volt I/O W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed