11P1 Search Results

Contextual Info: Inductive sensors IFBR 11P13T1/L-9 Inductive proximity switch dimension drawing 55 51 4 ø 11 LED general data photo mounting type unshielded special type Hygiene design nominal sensing distance Sn 6 mm hysteresis 2 . 15 % of Sr output indicator LED red

Contextual Info: Inductive sensors IFBR 11P17T1/S14L-9 Inductive proximity switch dimension drawing 60 43 ø 11 LED M12 x 1 general data photo mounting type shielded special type Hygiene design nominal sensing distance Sn 4 mm hysteresis 2 . 15 % of Sr output indicator LED red

Contextual Info: Inductive sensors IFBR 11P13T1/L-9 Inductive proximity switch 54 50 ø 11 4 dimension drawing LED general data photo mounting type non-flush special type Hygiene design nominal sensing distance Sn 6 mm hysteresis 2 . 15 % of Sr output indicator LED red

Contextual Info: Inductive sensors IFBR 11P17T1/L-9 Inductive proximity switch dimension drawing 55 ø 11 LED general data photo mounting type shielded special type Hygiene design nominal sensing distance Sn 4 mm hysteresis 2 . 15 % of Sr output indicator LED red Approvals/certificates

Contextual Info: Inductive sensors IFBR 11P17T1/S14L-9 Inductive proximity switch dimension drawing 60 43 ø 11 LED M12 x 1 general data photo mounting type flush special type Hygiene design nominal sensing distance Sn 4 mm hysteresis 2 . 15 % of Sr output indicator

Contextual Info: Inductive sensors IFBR 11P17T1/S14L-9 Inductive proximity switch dimension drawing 60 43 ø 11 LED M12 x 1 general data photo mounting type shielded special type Hygiene design nominal sensing distance Sn 4 mm hysteresis 2 . 15 % of Sr output indicator

Contextual Info: Inductive sensors IFBR 11P17T1/S14L-9 Inductive proximity switch dimension drawing 60 43 ø 11 LED M12 x 1 general data photo mounting type shielded special type Hygiene design nominal sensing distance Sn 4 mm hysteresis 2 . 15 % of Sr output indicator

Contextual Info: Inductive sensors IFBR 11P13T1/S14L-9 Inductive proximity switch dimension drawing 60 39 4 ø 11 LED M12 x 1 general data photo mounting type non-flush special type Hygiene design nominal sensing distance Sn 6 mm hysteresis 2 . 15 % of Sr output indicator

Contextual Info: Inductive sensors IFBR 11P13T1/S14L-9 Inductive proximity switch dimension drawing 60 39 4 ø 11 LED M12 x 1 general data photo mounting type unshielded special type Hygiene design nominal sensing distance Sn 6 mm hysteresis 2 . 15 % of Sr output indicator

china mobile phone circuit diagram

Abstract: tag 8931 ELASTOSIL
Contextual Info: Induktive Sensoren Inductive sensors Détecteurs inductifs Elektrischer Anschluss Connection diagram Schéma de raccordement Abmessungen Dimensions Dimensions IFBR 11P17T1/S14L-9 BN 1 PNP ø 11 +V S BK (4) / WH (2) BU (3) output BN = Braun/brown/brun WH = Weiss/white/blanc

Contextual Info: Inductive sensors IFBR 11P17T1/L-9 Inductive proximity switch dimension drawing 55 ø 17 LED general data photo mounting type flush special type Hygiene design nominal sensing distance Sn 4 mm hysteresis 2 . 15 % of Sr output indicator LED red approvals/certificates

Contextual Info: Inductive sensors IFBR 11P17T1/L-9 Inductive proximity switch dimension drawing 55 ø 11 LED general data photo mounting type shielded special type Hygiene design nominal sensing distance Sn 4 mm hysteresis 2 . 15 % of Sr output indicator LED red electrical data

Contextual Info: Inductive sensors IFBR 11P17T1/L-9 Inductive proximity switch dimension drawing 54 ø 11 LED general data photo mounting type shielded special type Hygiene design nominal sensing distance Sn 4 mm hysteresis 2 . 15 % of Sr output indicator LED red Approvals/certificates

Contextual Info: Induktive Sensoren Inductive sensors Détecteurs inductifs Elektrischer Anschluss Connection diagram Schéma de raccordement Abmessungen Dimensions Dimensions IFBR 11P17T1/L-9 BN 1 PNP ø 11 +V S BK (4) BU (3) BN = Braun/brown/brun BK = Schwarz/black/noir

tag 8931

Abstract: china mobile phone circuit diagram
Contextual Info: Induktive Sensoren Inductive sensors Détecteurs inductifs Elektrischer Anschluss Connection diagram Schéma de raccordement Abmessungen Dimensions Dimensions IFBR 11P13T1/L-9 BN 1 PNP 4 ø 11 +V S BK (4) BU (3) output Z Détecteur de proximité 0V 54 50

Contextual Info: DF2S16CT ESD Protection Diodes Silicon Epitaxial Planar DF2S16CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

Contextual Info: DF2B6.8ACT ESD Protection Diodes Silicon Epitaxial Planar DF2B6.8ACT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: DF2B12M1CT ESD Protection Diodes Silicon Epitaxial Planar DF2B12M1CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

toshiba tlp

Contextual Info: DF2B6.8M1ACT ESD Protection Diodes Silicon Epitaxial Planar DF2B6.8M1ACT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

JDP2S05CT

Contextual Info: JDP2S05CT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05CT Unit:mm Absolute Maximum Ratings Ta = 25°C Characteristics 0.05±0.03 0.6±0.05 Symbol Rating Unit Reverse voltage VR 20 V Forward current IF 50 mA Junction temperature Tj 150 °C Tstg −55~150

Contextual Info: DF2S18CT ESD保護用ダイオード シリコンエピタキシャルプレーナ形 DF2S18CT 1. 用途 • ESD保護用 注意:本製品はESD保護用ダイオードであり, ESD保護用以外の用途 定電圧ダイオード用途を含むがこれに限らない

333x

Abstract: 11P123 11P-154X-50
Contextual Info: 10 nH 90 80 www.fastrongroup.com 100 nH 11 P Q Factor 70 60 with tube 50 40 Inductance 1000 nHNo Part 30 L (mH) 11P-100K-50 11P-101K-50 11P-221K-50 Ø 12.0 max 10.0 min 10 6800 nH 11P-331K-50 11P-471K-50 1 10 100 11P-561K-50 1000 11P-761K-50 Frequency (MHz)