11OHMS Search Results

types of transistors

Abstract: BFP405 VPS05605 internal circuit diagram of choke BCR410W AN064 RF Transistor reference SOT343 C1 c4 rf amplifier
Contextual Info: Application Note No. 064 Silicon Discretes Using the BCR410W Bias Controller with BFP405 in Amplifier Circuits Introduction 3 Low supply voltages in mobile electronic devices increasingly jeopardize your efforts to supply your RF amplifiers with stable bias current. Most of the commonly

DIM600XSM45-F000

Abstract: 110nF
Contextual Info: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25832) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)

DIM600NSM45-F000

Contextual Info: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.1 February 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS

Contextual Info: HV219 HV219 Low Charge Injection 8-Channel High Voltage Analog Switch Features General Description HVCMOS technology for high performance Very low quiescent power dissipation-10µA Output On-resistance typically 11Ω Low parasitic capacitance DC to 10MHz analog signal frequency

Contextual Info: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.2 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS

Contextual Info: Product Summary Sheet HV219 Low Switch Resistance, Low Charge Injection, 8-Channel, High Voltage Analog Switch IC LATCHES DIN Applications ‰ Medical ultrasound imaging ‰ Nondestructive evaluation LEVEL SHIFTERS OUTPUT SWITCHES D LE CL SW0 D LE CL SW1 D LE

110nF

Abstract: DIM600NSM45-F000
Contextual Info: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.2 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS

ge traction motor

Abstract: DIM600XSM45-F000
Contextual Info: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability • High isolation module

DIM600NSM45-F000

Contextual Info: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.4 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25833) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)

DC 5V to DC 100V CIRCUIT DIAGRAM

Abstract: HV20220 HV20220FG HV20220PJ HV219 HV219PJ
Contextual Info: HV219 HV219 Initial Release Low Charge Injection 8-Channel High Voltage Analog Switch Features ! ! ! ! ! ! ! ! ! ! ! General Description HVCMOS technology for high performance Very low quiescent power dissipation-10µA Output On-resistance typically 11Ω

Contextual Info: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.2 May 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25346) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)

Contextual Info: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.3 April 2007 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS