11JAN10 Search Results

Contextual Info: Z C H N G .N r. MASSE IN mm - C-160337-D EINZELMASSE NICHT MASSTÄBLICH DESCRIPTION LTR ¡2*6,4 FÜR M6 B1 BOLZEN DATE 11JAN10 REVISED PER ECO-10-000445 DWN APVD KK HMR 1 ISOl.02,5-3,5 BESTELL NS MATERIAL OBERFLÄCHE MESSING. BLANK 160337-1 160337-2 ; : MESSING VERZINNT.

modular jack RJ45 8P8C

Abstract: JACK RJ45 8P8C RJ45 8P8C TYCO 8P8C jack rj45 5-1734324-3 8P8C RJ45 LED rj45 jack 8P8C 4-1734324-3 RJ45 amp
Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL RIGHTS BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S RESERVED. p DESCRIPTION LTR APVD 14D EC 07 ECR—07—028576 REVISED PER ECO-10-000445 A1 DWN DATE KK AEG 11JAN10 X < > I_

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Contextual Info: TH I 5 DRAW I NG IS COPY RIGH T UNPUBLI SHED. R E L E A S E D 19 BY A MP FOR ALL INCORPORATED. P U B L I C A T IO N RIGH TS LOC . I 9 R E V I S I ONS D I ST DY R ES ER V ED . LTR 508 APVD KK AEG I - 2 . 5 ][ □ DWN 11JAN10 REVISED PER ECO-10-000445 0 1 +

Contextual Info: 1 THS MW Mtt 15 UUFUBUSHHT OOPHWHT m tf n r m tO M C S OMWMWnOW. - r h e s ie r — REVISIO N S LDC ALL Riems HESBWH5T DW LTB HIE DESCRFIION DwJ 20FEB08 A REDRAW ECR-08-0029e9 A1 REVISED PER ECQ-10-000445 11JAN10 SC WK KK AEG TOP PANEL GROUND 21.35±0.25

Si2302ADS

Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE
Contextual Info: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si7141

Abstract: Si7141DP-T1-GE3 Si7141DP
Contextual Info: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SUD50P04-08 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiB488DK Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

6278349-8

Contextual Info: TH I S DRAW I NG £ l IS UNPUBLI S HE D. C O P Y RI G HT 19 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S LOC CE RESERVED. REV I S IONS D I ST 00 LTR RELEASE A1 A MATERIAL: HOUSING: DIECAST ZINC, NICKEL PLATED AL I G N M E N T S L E E V E : S E E DASH N O ' S

XD1001-BD-EV1

Abstract: DM6030HK TS3332LD XD1001-BD XD1001-BD-000V XD1001
Contextual Info: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier D1001-BD January 2010 - Rev 11-Jan-10 Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Si2302ADS

Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3
Contextual Info: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

sir166

Abstract: 4558 m 4558 4558 C AN609 305510
Contextual Info: SiR166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Si2323CDS

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

AN609

Abstract: SiA433EDJ
Contextual Info: SiA433EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

sir166

Abstract: SiR166DP
Contextual Info: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: 2 THIS £ l DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 HT$ LOC RESERVED. REV I S I ONS D I ST 22 AA LTR DE S C R PTION DATE Al ECOS I 1- 0 2 0 1 - 04 REV PER E C R - 0 9 - 0 2 3 0 2 8 A2 REVISED PER ECO-10-000445

Contextual Info: New Product SiA778DJ Vishay Siliconix N-Channel 12 V and 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel 1 12 Channel 2 20 RDS(on) (Ω) 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.225 at VGS = - 4.5 V 0.270 at VGS = - 2.5 V

SUD50P04-08

Contextual Info: SUD50P04-08 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET