11EQ0 Search Results

11EQ09

Contextual Info: SBD Type :11EQ09 FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 26mm&52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage

Contextual Info: SBD Type :11EQ04 OUTLINE DRAWING OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 26mm&52mm Inside Tape Spacing Package Available Maximum Ratings

11EQ06

Contextual Info: SBD Type :11EQ06 OUTLINE DRAWING OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 26mm&52mm Inside Tape Spacing Package Available Maximum Ratings

Contextual Info: SCHOTTKY BARRIER DIODE 11EQ05 11EQ06 i .i a /50~ 6 0 v FEATU R ES • Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Capability • 30 Volts through 100 Volts Types Available ° 26mm and 52mm Inside Tape Spacing

11EQ09

Abstract: 11EQ10
Contextual Info: SCHOTTKY BARRIER DIODE 11EQ09 11EQ10 1.1A/90— 100V FEA TUR ES Miniature Size • Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability » 30 Volts through 100 Volts Types Available • 26mm and 52mm Inside Tape Spacing Package Available

11EQ09

Contextual Info: SBD Type :11EQ09 FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 26mm&52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage

Contextual Info: 60 Volts 1A Avg. 11EQ06 SBD •OUTLINE DRAWING mm ■最大定格 Maximum Ratings Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

Contextual Info: 40 Volts 1A Avg. 11EQ04 SBD •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

11EQ06

Contextual Info: 1A Avg. 60 Volts SBD 11EQ06 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

11EQ04

Contextual Info: 1A Avg. 40 Volts SBD 11EQ04 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

11EQ03

Abstract: 11EQ04
Contextual Info: SCHOTTKY BARRIER DIODE 11EQ03 11EQ04 1.1A/30— 40V F E A TU R E S » Miniature Size 2 .7 .1 0 6 n I - MAX U1A ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.7(.027) Ô.5(.Û20) » High Surge Capability DIA 2 7 (1 .0 6 ) " M IN • 30 Volts through 100 Volts Types Available

11EQ04

Contextual Info: SBD Type :11EQ04 OUTLINE DRAWING OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 26mm&52mm Inside Tape Spacing Package Available Maximum Ratings

11EQ06

Contextual Info: SBD Type :11EQ06 OUTLINE DRAWING OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 26mm&52mm Inside Tape Spacing Package Available Maximum Ratings

Contextual Info: SCHOTTKY BARRIER DIODE 11EQ05 11EQ06 1 .1 A / 5 0 — 60V FEATURES °Miniature Size ° Low Forward Voltage Drop • Low Power Loss, High Efficiency ° High Surge Capability » 30 Volts through 100 Volts Types Available ° 26mm and 52mm Inside Tape Spacing

52c20

Abstract: 11EQ05 11EQ06
Contextual Info: SCHOTTKY BARRIER DIODE 11EQ05 11EQ06 1.1A/50— 60V FEATURES 2.7 .106 d ia MAX U1A o Miniattire Size » Low Forward Voltage Drop 0.7(.027) DIA 0.5(.020) • Low Power Loss, High Efficiency • High Surge Capability 27 ( 1 . 06 ) ' MIN • 30 Volts through 100 Volts Types Available

Contextual Info: 11EQ09 11EQ10 1.1A/90—100V SCHOTTKY BARRIER DIODE FEATURES o Miniature Size 2.7 .106 DIA M A X U1A » Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.7(.027) DIA 0.5(.020) 0 High Surge Capability 2 7 ( 1 .06 ) M IN ° 30 Volts through 100 Volts Types Available

Contextual Info: SCHOTTKY BARRIER DIODE 11EQ03 11EQ0 4 1 .1 A / 3 0 — 40V FEATURES » Miniature Size ° Low Forward Voltage Drop " Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available ° 26mm and 52mm Inside Tape Spacing

Contextual Info: 1A Avg. 90 Volts SBD 11EQ09 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 90 平 均 整 流 電 流 Average Rectified Forward Current IO 50Hz正弦半波通電抵抗負荷

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

50PQSA045

Abstract: 21DQ10 50PHSA12 11EQS04 11DQ10 11EQS10 31DQ04 10EHA20 21dq03l 11DQ04
Contextual Info: Latest Data sheets are available at URL : http://www.niec.to.jp/ f f * "fy"' - Mton Inter Electronics Corporation •FOREIGN SALES V The value would changed without notice. Printed in MARCH 2009 1-19-5 Nishi-Shinjuku.Meiho Bidg.#2 Shinjuku-ku, Tokyo 16 0-0 023 JA PA N

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: SBD Type：11EQ09 •OUTLINE DRAWING 構造 ：ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 ： 高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings

Contextual Info: SBD Type：11EQ06 •OUTLINE DRAWING 構造 ：ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 ： 高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings