1193A Search Results

Contextual Info: HB52RF649E1U-75B Description L EO 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM E0023H10 (1st edition) (Previous ADE-203-1193A (Z) Preliminary Jan. 31, 2001 uc od Pr The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

Shenzhen ditelong industrial Co., Ltd

Abstract: 1193A
Contextual Info: NO.：QB/SPS 73 PS 1193A SPECIFICATIONS NAME: 0.8 inch DIGITAL DISPLAY TYPE: LDS1081BA SHENZHEN DITELONG INDUSTRIAL CO.,LTD. SHENZHEN CANDELA ELECTRONIC CO.,LTD. SHENZHEN SUCCESS PHOTOELECTRONICS CO.,LTD SHENZHEN OFFICE Add: Room 1911,Zhongwin Science & Techn.Bldg,Bagua 3th Rd.Bagualing Industry Zone Shenzhen,China

512m pc133 SDRAM DIMM

Abstract: PC133 registered reference design Hitachi DSA00174 pc133 SDRAM DIMM package Nippon capacitors
Contextual Info: HB52RF649E1U-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM ADE-203-1193A (Z) Preliminary Rev. 0.1 Oct. 6, 2000 Description The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

PC133 registered reference design

Contextual Info: HB52RF649E1U-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM E0023H10 (1st edition) (Previous ADE-203-1193A (Z) Preliminary Jan. 31, 2001 Description The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

ci 2675

Abstract: 512m pc133 SDRAM DIMM nec 2405 PC133 registered reference design 512m pc133 SDRAM DIMM 168 elpida
Contextual Info: HB52RF649E1U-75B Description L EO 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM E0023H10 (1st edition) (Previous ADE-203-1193A (Z) Preliminary Jan. 31, 2001 od Pr The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

CT-1550

Contextual Info: T H IS COPY IS PROVIDED ON A RESTRICTED B ASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PA N D U 1T PART NUMBER STUD SIZE PV14-6F #6 PV14-6FN #6 PV14-8F #8 P V 1 4 - 1OF #10 PV14-10FN #10 PV14-14F 1/4" DI MENS IONS A» ±-03

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

rft katalog

Abstract: transistor vergleichsliste dl 8205 VEB mikroelektronik mikroelektronik RFT "halbleiterwerk frankfurt" DL074D katalog rft TRANSISTOR KATALOG rft mikroelektronik
Contextual Info: [fin ] D[k ä rä fs J E I S l n b r 1! Bipolare digitale Schaltkreise Low -Pow er-S chottky-TTL S c h o ttky -T T L -In te rfa c e -S e rie n il- c Bipolare digitale Schaltkreise Low-Power-Schottky-TTL Sch ott ky-TTL-l nterf a ce-Se r ie Vorwort Der vorliegende Katalog ist vor allem für Konstrukteure und Geräteentwickler

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

diode ge a40f

Abstract: SCR Handbook, General electric snubber A139PR SCR Handbook, General electric IN1188 A139E A40F GE SCR 1000 AMP 1N3909-13 1N5332
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N248& 1N 1 1 9 5 A- JEOEC 50B 98A GE TYPE SPECIFICATIONS 1N 215460 - * F M A V M ax. average forw ard current (1 phase oper­ ation) (A ) ^ R M (r e p ) M ax. repetitive peak reverse voltage (V ) @ T C = (°C ) 50 - - - A 40F

SD5115

Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15
Contextual Info: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3

lt 427

Abstract: 2TL119-3-A03 BK-09
Contextual Info: MICRO SWITCH FREEPORT ILLINOIS. U S A A DIVISION OF H O N E Y W E L L C A T A L O G L IS T IN G SWITCH-TOGGLE 2TL119 SERIES CHART 1 F E D . M F G . C O D E «1C2B T H IS D R A W IN G C O V E R S A P R O P R IE T A R Y IT E M A N D IS T H E P R O P E R T Y O F M IC R O S W IT C H . A D IV IS IO N O F

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published