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Contextual Info: Ordering number : EN5290 2SC5296 No.5290 NPN Triple Diffused Planar Silicon Transistor SAXYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu re s • High Speed: tr = 100ns typ. •High breakdown voltage : VcBo = 1500V.	OCR Scan	en5290 2sc5296 100ns 2039d +211696yk ta-0585	PDF
transistor 2sc5296 Abstract: 2sc5296 equivalent 2sc5296 SANYO Electric Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .	Original	enn5290a 2sc5296 100ns 2039d +3transistor 2sc5296 equivalent 2sc5296 sanyo electric	PDF
2sc5296 Abstract: transistor 2sc5296 TA-0585 Contextual Info: O rd e rin g n u m b e r :E N 5290 _ 2SC5296 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatu re s • High Speed : 1^-= 100ns typ. • High breakdown voltage : Vcbo = 1500V.	OCR Scan	en5290 2sc5296 100ns transistor 2sc5296 +1ta-0585	PDF
transistor 2sc5296 Abstract: 2sc5296 Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .	Original	enn5290a 2sc5296 100ns 2039d +1transistor 2sc5296	PDF
GDED417 Contextual Info: I Ordering num ber: EN 5291 2SC5297 No.5291 NPN Triple Diffused Planar Silicon Transistor SA iYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications i F e a tu re s • High S peed: t,. = 100ns typ. • High breakdown voltage : V cbo = 1500V.	OCR Scan	2sc5297 100ns t03pml 11696yk +2ta-0585 gded417	PDF
transistor 2sc5297 Abstract: 2SC5297 52914 Contextual Info: Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .	Original	enn5291 2sc5297 100ns 2039d +2transistor 2sc5297 52914	PDF
2SC5297 Abstract: EN5291 Contextual Info: Ordering num ber:EN5291 no.5291 1/ 2SC 5297 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications i Features • High Speed : = 100ns typ. • High breakdown voltage : Vcbo= 1500V. • High reliability Adoption of HVP process .	OCR Scan	en5291 2sc5297 100ns	PDF
Contextual Info: Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .	Original	enn5291 2sc5297 100ns 2039d	PDF
Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .	Original	enn5290a 2sc5296 100ns 2039d	PDF